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Nanotechnology-Enabled Sensors

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4.3 Formation of Thin Films 145<br />

The following affect the condensation rate:<br />

(a) If the accommodation coefficient, α, is different in various faces, the<br />

result can be an asymmetric growth.<br />

(b) J linearly depends on α at low concentrations of the deposition species<br />

and low J. However, at high value for J the increase in α does not cause<br />

any increase in J anymore as the Eq. (4.1) is no longer valid.<br />

(c) High deposition pressure, P, increases, J, and at the same time may increase<br />

the probability of producing defects. This can be beneficial in the<br />

formation of nanostructures. Generally, we would like to produce gaps<br />

which result in separate nanostructures during the deposition process. High<br />

concentrations of the growth species may also generate secondary nucleation.<br />

The secondary nucleation can act as a seed for the growth of multiple<br />

crystal facets and branching (Fig. 4.6).<br />

Fig. 4.6 The formation of nucleation sites and the subsequent branching of nanorods<br />

from these sites during the thermal evaporation of molybdenum oxide onto<br />

the surface of alumina.<br />

The residence time, τs, and diffusion distance, Ds, for the growth of a<br />

species on a substrate are two important parameters which determine the<br />

formation and the dimensions of nanostructures during the deposition<br />

process. τs is given by the equation:<br />

exp(<br />

Edes / kT )<br />

τ s =<br />

, (4.2)<br />

v

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