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CHEMICAL VAPOR DEPOSITION OF THIN FILM MATERIALS FOR ...

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deposited at 600˚C is the lowest. One important factor contributing to single crystal thin film<br />

FMR line width is the surface roughness. This is probably the reason why films deposited at<br />

higher temperatures show larger FMR linewidth. Another possible reason is interface diffusion<br />

of Mg element from the substrate to the film at higher temperatures. Effect of chemical<br />

impurities on FMR line width of ferrite materials has been widely investigated.[169,170] It's<br />

noteworthy that the increased single crystal quality at higher temperatures is compromised by the<br />

decreased FMR performance. Thin film deposited at 500˚C also shows larger FMR line width<br />

than that of 600˚C. This might be attributed to the low single crystal quality and different ion<br />

distribution in nickel ferrite lattice structure resulted from limited surface diffusion behavior at<br />

low temperatures.<br />

Fig. 49. Ferromagnetic resonance curve of nickel ferrite films deposited on MgAl2O4 substrate at different growth<br />

temperatures. (Sample size 5 mm × 5 mm, thickness 650~780 nm) The inset shows the profile of FMR line width<br />

with thin film growth temperature.<br />

Due to the smallest FMR line width of films deposited at 600˚C, angle and frequency<br />

dependence FMR behavior of film deposited at this temperature is characterized. The angle<br />

dependence of in plane FMR line width measured at 9.5 GHz shows four-fold symmetry (Fig.50),<br />

which coincides with the cubic structure of nickel ferrite as measured by XRD ϕ scan. In this<br />

94

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