CHEMICAL VAPOR DEPOSITION OF THIN FILM MATERIALS FOR ...

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Fig. 27. Surface Si-H bonds change with TDMAH adsorption and desorption at different crystal temperatures. Fig. 28. Surface OH group showing up in the desorption pumping process (150˚C). In the desorption processes for all temperatures, a peak located at ~3700 cm -1 showed up after 3 to 4 min pumping. The results for the 150˚C process is showed in Fig.28. This peak has been attributed to OH stretching modes from Hf-OH group, which is different from that of H2O (broad peak at ~3400 cm -1 ). It has been found that the reaction of TDMAH with H2O is much thermodynamically favorable by both experimental and theoretical studies. The residual water vapor in the ATR cell (or leaks) could thus easily attack the surface adsorbed TDMAH or its 59
decomposition products (Hf-H) and generate Hf-OH groups on the surface. This might not be a big effect in the deposition of HfO2, but it will disastrous and definitely contaminate the deposition of Hf3N4 or HfN films. 3.3 Plasma Enhanced Atomic Layer Deposition of HfN Films 3.3.1 Introduction HfN thin film has showed excellent properties for being used as the gate electrode material to work with HfO2 (gate dielectric layer) in the MOSFET structure. PEALD of high quality HfN thin film at low substrate temperatures would be an greatly preferred process for practical fabrication. Previous studies on PEALD of HfN by using hafnium amides and hydrogen plasma has reported the incorporation of C elements in the as deposited thin films. However, the related thin film growth chemistry is rarely investigated. In this dissertation research, aside from the surface chemistry study of TDMAH precursor by ATR-FTIR, in-vacuo XPS is also used to study the as grown thin film surface. These work can provide a clear picture of the HfN thin film growth chemistry and its relation to thin film physical properties. 3.3.2 Experimental Details Hafnium nitride (HfN) thin film deposition on hydrogen terminated Si(100) and thermally grown SiO2 (on Si) substrates was carried out in a home built plasma enhanced atomic layer deposition (PEALD) system (Fig.29). This PEALD chamber is a part of a ALD/CVD thin film deposition cluster and connected to a in vacuo XPS system by vacuum gate valves, as showed in Fig.30. 60
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CHEMICAL VAPOR DEPOSITION OF THIN F
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ABSTRACT Chemical vapor deposition
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DEDICATION This dissertation is ded
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φ In-plane tilt angle of X-ray dif
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ACKNOWLEDGMENTS It is my pleasure t
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CONTENTS ABSTRACT .................
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3.2.1 Introduction ................
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LIST OF TABLES Table 1. Hafnium ami
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indicated by the complex FMR curve.
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Fig. 49. Ferromagnetic resonance cu
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growth rate, good step coverage and
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growth of thin film oxides due to t
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one can uniformly deliver precursor
Page 27 and 28: for the next reaction step as shown
Page 29 and 30: Fig. 3. Schematic of a typical dire
Page 31 and 32: is predominantly dependent on syste
Page 33 and 34: J r J A -D n b-n 0 δ n or for the
Page 35 and 36: surface passivation with certain in
Page 37 and 38: ay spectroscopy (EDS), Wavelength d
Page 39 and 40: incidence angle is larger than cert
Page 41 and 42: epresenting those characteristic ph
Page 43 and 44: 1.2.3.3 X-ray Diffraction (XRD) X-r
Page 45 and 46: exhibit diffraction peaks in the no
Page 47 and 48: (nanometers to tens of nanometers),
Page 49 and 50: strongest absorption of microwave s
Page 51 and 52: pinch-off to indicate the lack of a
Page 53 and 54: coupling is from unbound ferrite-fe
Page 55 and 56: diffusion barrier material in micro
Page 57 and 58: Fig. 14. A cross sectional scanning
Page 59 and 60: In spite of the same spinel structu
Page 61 and 62: ferrites has been investigated exte
Page 63 and 64: systems is showed in Fig.18.[83] As
Page 65 and 66: precursor vaporization process, e.g
Page 67 and 68: CHAPTER 3. PLASMA ENHANCED ATOMIC L
Page 69 and 70: the initial surface chemistry for t
Page 71 and 72: delay time of 2 seconds between spe
Page 73 and 74: Kcal/mol respectively. The stronger
Page 75 and 76: negative slope) behavior in the pum
Page 77: the existence of both physisorbed a
Page 81 and 82: dried by ultra high purity N2 gas.
Page 83 and 84: pressure for XPS analysis is around
Page 85 and 86: Hf and N elements, incorporation of
Page 87 and 88: [150,151] This is a unique feature
Page 89 and 90: software. The thickness results are
Page 91 and 92: CHAPTER 4. DIRECT LIQUID INJECTION
Page 93 and 94: film growth region. The properties
Page 95 and 96: solution was accurately controlled
Page 97 and 98: size). For the rocking curve analys
Page 99 and 100: oxygen does not participate in the
Page 101 and 102: ecause vapor velocity cannot be cha
Page 103 and 104: Fig. 40. Cross-sectional view by fi
Page 105 and 106: the MgAl2O4 substrate confirms cube
Page 107 and 108: pattern. Fig.44(b) has diffraction
Page 109 and 110: We have used an AGM (Alternating Gr
Page 111 and 112: as derived equations for different
Page 113 and 114: deposited at 600˚C is the lowest.
Page 115 and 116: wave states degenerate with the FMR
Page 117 and 118: Fig. 53. ϕ-scan of nickel ferrite
Page 119 and 120: Surface roughness characterized by
Page 121 and 122: Fig. 56. X-ray diffraction θ-2θ c
Page 123 and 124: 4.4 Conclusion In summary, we have
Page 125 and 126: CHAPTER 5. DIRECT LIQUID INJECTION
Page 127 and 128: eaction zone of the tube furnace is
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Fig. 58. X-ray diffraction characte
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interface. This phenomenon probably
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6.1 Conclusion CHAPTER 6. CONCLUSIO
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the temperature range of 600˚C to
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such as PMN-PT and PZN-PT. CVD proc
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[18]. L. S.-J. Peng, X. X. Xi, B. H
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[54]. B. O. Johansson, J. -E. Sundg
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[96]. J. D. Adam, S. V. Krishnaswam
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[136]. J. Zhao, V. Fuflyigin, F. Wa
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APPENDIX A: LabVIEW PROGRAM FOR PEA
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APPENDIX B: TDMAH MOLECULAR STRUCTU
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H 18 B19 2 A18 1 D17 H 18 B20 2 A19
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