CHEMICAL VAPOR DEPOSITION OF THIN FILM MATERIALS FOR ...

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LIST <strong>OF</strong> FIGURES Fig. 1. Schematic of a typical CVD system with a horizontal tube reactor.....................................3 Fig. 2. A typical ALD cycle with oxidation reaction.....................................................................7 Fig. 3. Schematic of a typical direct liquid injection vaporization system....................................10 Fig. 4. Schematic of multiple reflection ART-FTIR spectroscopy................................................20 Fig. 5. Schematic of photoelectron generation process.................................................................21 Fig. 6. Geometric derivation of Bragg's law..................................................................................24 Fig. 7. Schematic of X-ray diffractometer for thin film crystal structure analysis........................25 Fig. 8. Main components of atomic force microscopy system......................................................27 Fig. 9. Magnetic dipole moment precessing about a static magnetic field....................................28 Fig. 10. Schematic of a n-channel MOSFET.................................................................................31 Fig. 11. ME coupling in a ferrite-ferroelectric layered structure...................................................34 Fig. 12. Unit cell of HfN crystal with cubic structure...................................................................35 Fig. 13. (a) Id-Vg and (b) Id-Vd characteristics of an n-MOSFET using HfN-HfO2 gate stack with EOT 1.18 nm.........................................................................................................................36 Fig. 14. A cross sectional scanning electron micrograph of uniform Hf3N4 thin film coating by ALD on a high aspect ratio trench structure (0.17 μm × 0.3 μm × 7.3 μm).............................38 Fig. 15. Representation of a spinel structure..................................................................................39 Fig. 16. Temperature dependence of FMR line width of bulk lithium ferrite single crystal in ordered phase (FMR measurement at two frequencies: 12.3 and 19.41 GHz)..........................41 Fig. 17. FMR measurement (9.07 GHz, perpendicular) of lithium ferrite film grown by LPE method on Mg(In,Ga)2O4 (111) substrate. Presence of inhomogeneity in the film is xv
indicated by the complex FMR curve............................................................................................42 Fig. 18. Schematic of a previously reported DLI-CVD system for nickel ferrite growth.............43 Fig. 19. Unit cell of perovskite BaTiO3 crystal.............................................................................45 Fig. 20. Schematic of a β-diketonate precursor. R' and R'' represent the same or different alkyl groups....................................................................................................................................46 Fig. 21. Molecular structure of TDMAH.......................................................................................49 Fig. 22. Experimental setup of the in-situ ATR-FTIR...................................................................50 Fig. 23. Experimental and theoretical modeled IR spectrum of TDMAH.....................................54 Fig. 24. IR spectra of TDMAH adsorption on hydrogenated Si(100) at different Ts....................54 Fig. 25. Integrated C-H stretching area change with TDMAH (a) adsorption and (b) desorption time at different substrate temperatures.......................................................................56 Fig. 26. Change of ratio of peak 2770 cm -1 to the whole C-H stretching area in the period of adsorption and desorption at different substrate temperatures......................................................58 Fig. 27. Surface Si-H bonds change with TDMAH adsorption and desorption at different crystal temperatures......................................................................................................................59 Fig. 28. Surface OH group showing up in the desorption/pumping process (150˚C)..................59 Fig. 29. Schematic of the plasma enhanced atomic layer deposition system................................61 Fig. 30. ALD/CVD thin film deposition cluster coupled with in vacuo XPS...............................61 Fig. 31. LabVIEW program for the control of PEALD process....................................................63 Fig. 32. Synchronized reactants and plasma pulsing sequence in PEALD experiments...............63 Fig. 33. The effect of purging time on oxygen incorporation........................................................65 Fig. 34. XPS depth profile analysis of (a) Hf4f (b) N1s and (c) C1s in an as deposited HfNxCy thin film. Sample prepared at 250˚C, 0.15 torr, 100W.....................................................66 Fig. 35. (a)Cross sectional view of HfNxCy on SiO2/Si (b)HRTEM images of HfNxCy-SiO2 and SiO2-Si interfaces (c) surface topography by AFM, RMS roughness is 0.8nm......................69 Fig. 36. X-ray reflectivity measurement of the as-deposited HfNxCy films at different plasma powers. The number of cycles are 200, 200, and 300 for 50, 100, and 150W, respectively..69 xvi
Page 1 and 2: CHEMICAL VAPOR DEPOSITION OF THIN F
Page 3 and 4: ABSTRACT Chemical vapor deposition
Page 5 and 6: DEDICATION This dissertation is ded
Page 7 and 8: φ In-plane tilt angle of X-ray dif
Page 9 and 10: ACKNOWLEDGMENTS It is my pleasure t
Page 11 and 12: CONTENTS ABSTRACT .................
Page 13 and 14: 3.2.1 Introduction ................
Page 15: LIST OF TABLES Table 1. Hafnium ami
Page 19 and 20: Fig. 49. Ferromagnetic resonance cu
Page 21 and 22: growth rate, good step coverage and
Page 23 and 24: growth of thin film oxides due to t
Page 25 and 26: one can uniformly deliver precursor
Page 27 and 28: for the next reaction step as shown
Page 29 and 30: Fig. 3. Schematic of a typical dire
Page 31 and 32: is predominantly dependent on syste
Page 33 and 34: J r J A -D n b-n 0 δ n or for the
Page 35 and 36: surface passivation with certain in
Page 37 and 38: ay spectroscopy (EDS), Wavelength d
Page 39 and 40: incidence angle is larger than cert
Page 41 and 42: epresenting those characteristic ph
Page 43 and 44: 1.2.3.3 X-ray Diffraction (XRD) X-r
Page 45 and 46: exhibit diffraction peaks in the no
Page 47 and 48: (nanometers to tens of nanometers),
Page 49 and 50: strongest absorption of microwave s
Page 51 and 52: pinch-off to indicate the lack of a
Page 53 and 54: coupling is from unbound ferrite-fe
Page 55 and 56: diffusion barrier material in micro
Page 57 and 58: Fig. 14. A cross sectional scanning
Page 59 and 60: In spite of the same spinel structu
Page 61 and 62: ferrites has been investigated exte
Page 63 and 64: systems is showed in Fig.18.[83] As
Page 65 and 66: precursor vaporization process, e.g
Page 67 and 68:
CHAPTER 3. PLASMA ENHANCED ATOMIC L
Page 69 and 70:
the initial surface chemistry for t
Page 71 and 72:
delay time of 2 seconds between spe
Page 73 and 74:
Kcal/mol respectively. The stronger
Page 75 and 76:
negative slope) behavior in the pum
Page 77 and 78:
the existence of both physisorbed a
Page 79 and 80:
decomposition products (Hf-H) and g
Page 81 and 82:
dried by ultra high purity N2 gas.
Page 83 and 84:
pressure for XPS analysis is around
Page 85 and 86:
Hf and N elements, incorporation of
Page 87 and 88:
[150,151] This is a unique feature
Page 89 and 90:
software. The thickness results are
Page 91 and 92:
CHAPTER 4. DIRECT LIQUID INJECTION
Page 93 and 94:
film growth region. The properties
Page 95 and 96:
solution was accurately controlled
Page 97 and 98:
size). For the rocking curve analys
Page 99 and 100:
oxygen does not participate in the
Page 101 and 102:
ecause vapor velocity cannot be cha
Page 103 and 104:
Fig. 40. Cross-sectional view by fi
Page 105 and 106:
the MgAl2O4 substrate confirms cube
Page 107 and 108:
pattern. Fig.44(b) has diffraction
Page 109 and 110:
We have used an AGM (Alternating Gr
Page 111 and 112:
as derived equations for different
Page 113 and 114:
deposited at 600˚C is the lowest.
Page 115 and 116:
wave states degenerate with the FMR
Page 117 and 118:
Fig. 53. ϕ-scan of nickel ferrite
Page 119 and 120:
Surface roughness characterized by
Page 121 and 122:
Fig. 56. X-ray diffraction θ-2θ c
Page 123 and 124:
4.4 Conclusion In summary, we have
Page 125 and 126:
CHAPTER 5. DIRECT LIQUID INJECTION
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eaction zone of the tube furnace is
Page 129 and 130:
Fig. 58. X-ray diffraction characte
Page 131 and 132:
interface. This phenomenon probably
Page 133 and 134:
6.1 Conclusion CHAPTER 6. CONCLUSIO
Page 135 and 136:
the temperature range of 600˚C to
Page 137 and 138:
such as PMN-PT and PZN-PT. CVD proc
Page 139 and 140:
[18]. L. S.-J. Peng, X. X. Xi, B. H
Page 141 and 142:
[54]. B. O. Johansson, J. -E. Sundg
Page 143 and 144:
[96]. J. D. Adam, S. V. Krishnaswam
Page 145 and 146:
[136]. J. Zhao, V. Fuflyigin, F. Wa
Page 147 and 148:
APPENDIX A: LabVIEW PROGRAM FOR PEA
Page 149 and 150:
APPENDIX B: TDMAH MOLECULAR STRUCTU
Page 151 and 152:
H 18 B19 2 A18 1 D17 H 18 B20 2 A19
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