CHEMICAL VAPOR DEPOSITION OF THIN FILM MATERIALS FOR ...

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Copyright Ning Li 2011 ALL RIGHTS RESERVED
ABSTRACT Chemical vapor deposition (CVD) has been employed to pursue high quality thin film growth for four different materials with excellent electronic or magnetic properties for certain device applications. The relationship between CVD processing conditions and various thin film properties has been systematically studied. Plasma enhanced atomic layer deposition (PEALD) is a special type of CVD technique and can be used for the deposition of very thin (few nanometers) and highly conformal thin films. PEALD of hafnium nitride (HfN) thin film is studied by using tetrakis (dimethylamido) hafnium (IV) (TDMAH) and hydrogen plasma. Prior to thin film deposition, TDMAH adsorption and reaction on hydrogenated Si(100) surface has been investigated by in-situ ATR-FTIR. It has been found that between 100˚C and 150˚C surface adsorbed TDMAH molecules start to decompose based on the β-hydride elimination mechanism. The decomposition species on the surface has been found hard to desorb at 150˚C, which can contaminate the thin film if the purging/pumping time is insufficient. Uniform and moderately conductive HfNxCy films are deposited on hydrogen terminated Si(100) and thermally grown SiO2 (on Si) substrates by PEALD process. The dependence of thin film resistivity on plasma power is found to be related to the change of surface chemical composition. In vacuo XPS depth profile analysis showed the existence of hafnium carbide phase, which to a certain degree can improve the film conductivity. Direct liquid injection chemical vapor deposition (DLI-CVD) has been utilized for epitaxial growth of nickel ferrite (NiFe2O4), lithium ferrite (LiFe5O8) and barium titanate ii
Page 1: CHEMICAL VAPOR DEPOSITION OF THIN F
Page 5 and 6: DEDICATION This dissertation is ded
Page 7 and 8: φ In-plane tilt angle of X-ray dif
Page 9 and 10: ACKNOWLEDGMENTS It is my pleasure t
Page 11 and 12: CONTENTS ABSTRACT .................
Page 13 and 14: 3.2.1 Introduction ................
Page 15 and 16: LIST OF TABLES Table 1. Hafnium ami
Page 17 and 18: indicated by the complex FMR curve.
Page 19 and 20: Fig. 49. Ferromagnetic resonance cu
Page 21 and 22: growth rate, good step coverage and
Page 23 and 24: growth of thin film oxides due to t
Page 25 and 26: one can uniformly deliver precursor
Page 27 and 28: for the next reaction step as shown
Page 29 and 30: Fig. 3. Schematic of a typical dire
Page 31 and 32: is predominantly dependent on syste
Page 33 and 34: J r J A -D n b-n 0 δ n or for the
Page 35 and 36: surface passivation with certain in
Page 37 and 38: ay spectroscopy (EDS), Wavelength d
Page 39 and 40: incidence angle is larger than cert
Page 41 and 42: epresenting those characteristic ph
Page 43 and 44: 1.2.3.3 X-ray Diffraction (XRD) X-r
Page 45 and 46: exhibit diffraction peaks in the no
Page 47 and 48: (nanometers to tens of nanometers),
Page 49 and 50: strongest absorption of microwave s
Page 51 and 52: pinch-off to indicate the lack of a
Page 53 and 54:
coupling is from unbound ferrite-fe
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diffusion barrier material in micro
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Fig. 14. A cross sectional scanning
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In spite of the same spinel structu
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ferrites has been investigated exte
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systems is showed in Fig.18.[83] As
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precursor vaporization process, e.g
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CHAPTER 3. PLASMA ENHANCED ATOMIC L
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the initial surface chemistry for t
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delay time of 2 seconds between spe
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Kcal/mol respectively. The stronger
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negative slope) behavior in the pum
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the existence of both physisorbed a
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decomposition products (Hf-H) and g
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dried by ultra high purity N2 gas.
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pressure for XPS analysis is around
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Hf and N elements, incorporation of
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[150,151] This is a unique feature
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software. The thickness results are
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CHAPTER 4. DIRECT LIQUID INJECTION
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film growth region. The properties
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solution was accurately controlled
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size). For the rocking curve analys
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oxygen does not participate in the
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ecause vapor velocity cannot be cha
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Fig. 40. Cross-sectional view by fi
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the MgAl2O4 substrate confirms cube
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pattern. Fig.44(b) has diffraction
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We have used an AGM (Alternating Gr
Page 111 and 112:
as derived equations for different
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deposited at 600˚C is the lowest.
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wave states degenerate with the FMR
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Fig. 53. ϕ-scan of nickel ferrite
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Surface roughness characterized by
Page 121 and 122:
Fig. 56. X-ray diffraction θ-2θ c
Page 123 and 124:
4.4 Conclusion In summary, we have
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CHAPTER 5. DIRECT LIQUID INJECTION
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eaction zone of the tube furnace is
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Fig. 58. X-ray diffraction characte
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interface. This phenomenon probably
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6.1 Conclusion CHAPTER 6. CONCLUSIO
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the temperature range of 600˚C to
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such as PMN-PT and PZN-PT. CVD proc
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[18]. L. S.-J. Peng, X. X. Xi, B. H
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[54]. B. O. Johansson, J. -E. Sundg
Page 143 and 144:
[96]. J. D. Adam, S. V. Krishnaswam
Page 145 and 146:
[136]. J. Zhao, V. Fuflyigin, F. Wa
Page 147 and 148:
APPENDIX A: LabVIEW PROGRAM FOR PEA
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APPENDIX B: TDMAH MOLECULAR STRUCTU
Page 151 and 152:
H 18 B19 2 A18 1 D17 H 18 B20 2 A19
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