CHEMICAL VAPOR DEPOSITION OF THIN FILM MATERIALS FOR ...

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APPENDIX A: LabVIEW PROGRAM <strong>FOR</strong> PEALD AUTOMATIC PROCESS 128
Page 1 and 2:
CHEMICAL VAPOR DEPOSITION OF THIN F
Page 3 and 4:
ABSTRACT Chemical vapor deposition
Page 5 and 6:
DEDICATION This dissertation is ded
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φ In-plane tilt angle of X-ray dif
Page 9 and 10:
ACKNOWLEDGMENTS It is my pleasure t
Page 11 and 12:
CONTENTS ABSTRACT .................
Page 13 and 14:
3.2.1 Introduction ................
Page 15 and 16:
LIST OF TABLES Table 1. Hafnium ami
Page 17 and 18:
indicated by the complex FMR curve.
Page 19 and 20:
Fig. 49. Ferromagnetic resonance cu
Page 21 and 22:
growth rate, good step coverage and
Page 23 and 24:
growth of thin film oxides due to t
Page 25 and 26:
one can uniformly deliver precursor
Page 27 and 28:
for the next reaction step as shown
Page 29 and 30:
Fig. 3. Schematic of a typical dire
Page 31 and 32:
is predominantly dependent on syste
Page 33 and 34:
J r J A -D n b-n 0 δ n or for the
Page 35 and 36:
surface passivation with certain in
Page 37 and 38:
ay spectroscopy (EDS), Wavelength d
Page 39 and 40:
incidence angle is larger than cert
Page 41 and 42:
epresenting those characteristic ph
Page 43 and 44:
1.2.3.3 X-ray Diffraction (XRD) X-r
Page 45 and 46:
exhibit diffraction peaks in the no
Page 47 and 48:
(nanometers to tens of nanometers),
Page 49 and 50:
strongest absorption of microwave s
Page 51 and 52:
pinch-off to indicate the lack of a
Page 53 and 54:
coupling is from unbound ferrite-fe
Page 55 and 56:
diffusion barrier material in micro
Page 57 and 58:
Fig. 14. A cross sectional scanning
Page 59 and 60:
In spite of the same spinel structu
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ferrites has been investigated exte
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systems is showed in Fig.18.[83] As
Page 65 and 66:
precursor vaporization process, e.g
Page 67 and 68:
CHAPTER 3. PLASMA ENHANCED ATOMIC L
Page 69 and 70:
the initial surface chemistry for t
Page 71 and 72:
delay time of 2 seconds between spe
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Kcal/mol respectively. The stronger
Page 75 and 76:
negative slope) behavior in the pum
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the existence of both physisorbed a
Page 79 and 80:
decomposition products (Hf-H) and g
Page 81 and 82:
dried by ultra high purity N2 gas.
Page 83 and 84:
pressure for XPS analysis is around
Page 85 and 86:
Hf and N elements, incorporation of
Page 87 and 88:
[150,151] This is a unique feature
Page 89 and 90:
software. The thickness results are
Page 91 and 92:
CHAPTER 4. DIRECT LIQUID INJECTION
Page 93 and 94:
film growth region. The properties
Page 95 and 96: solution was accurately controlled
Page 97 and 98: size). For the rocking curve analys
Page 99 and 100: oxygen does not participate in the
Page 101 and 102: ecause vapor velocity cannot be cha
Page 103 and 104: Fig. 40. Cross-sectional view by fi
Page 105 and 106: the MgAl2O4 substrate confirms cube
Page 107 and 108: pattern. Fig.44(b) has diffraction
Page 109 and 110: We have used an AGM (Alternating Gr
Page 111 and 112: as derived equations for different
Page 113 and 114: deposited at 600˚C is the lowest.
Page 115 and 116: wave states degenerate with the FMR
Page 117 and 118: Fig. 53. ϕ-scan of nickel ferrite
Page 119 and 120: Surface roughness characterized by
Page 121 and 122: Fig. 56. X-ray diffraction θ-2θ c
Page 123 and 124: 4.4 Conclusion In summary, we have
Page 125 and 126: CHAPTER 5. DIRECT LIQUID INJECTION
Page 127 and 128: eaction zone of the tube furnace is
Page 129 and 130: Fig. 58. X-ray diffraction characte
Page 131 and 132: interface. This phenomenon probably
Page 133 and 134: 6.1 Conclusion CHAPTER 6. CONCLUSIO
Page 135 and 136: the temperature range of 600˚C to
Page 137 and 138: such as PMN-PT and PZN-PT. CVD proc
Page 139 and 140: [18]. L. S.-J. Peng, X. X. Xi, B. H
Page 141 and 142: [54]. B. O. Johansson, J. -E. Sundg
Page 143 and 144: [96]. J. D. Adam, S. V. Krishnaswam
Page 145: [136]. J. Zhao, V. Fuflyigin, F. Wa
Page 149 and 150: APPENDIX B: TDMAH MOLECULAR STRUCTU
Page 151 and 152: H 18 B19 2 A18 1 D17 H 18 B20 2 A19
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