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CHEMICAL VAPOR DEPOSITION OF THIN FILM MATERIALS FOR ...

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Fig.56(a), the (400) reflection peaks from lithium ferrite show doublet due to nonmonochromatic<br />

X-ray (Cu Kα1 and Cu Kα2). With increasing deposition temperature, the peak shifts to lower 2θ<br />

angles, which indicates an increasing out-of-plane lattice constant. The dashed line in the plot<br />

marks where the bulk crystal value is. These results illustrate that with increasing deposition<br />

temperature the stress in the as deposited films changes from tensile to compressive. This<br />

phenomenon is resulted from both the effect of lattice mismatch and difference of thermal<br />

expansion coefficient. Different from growth on MgO, films grown on MgAl2O4 do not show<br />

any crystalline features at 500˚C and 600˚C as shown in Fig.56 (b). This is probably because of<br />

the larger lattice mismatch between lithium ferrite and MgAl2O4. At higher temperatures, 700˚C<br />

and 800˚C, weak diffraction peaks can be observed. However, peaks other than the epitaxial<br />

orientation (h00) are also found in the deposition at 800˚C.<br />

Table 7. Typical vaporization and processing conditions for DLI CVD of epitaxial LiFe5O8 films.<br />

Substrate MgAl2O4 (100) / MgO (100)<br />

Reaction pressure (Torr) 10<br />

Growth temperature (˚C) 500-800<br />

Concentration (Fe(acac)3, mol/L) 0.084<br />

Concentration (Li(acac), mol/L) 0.0168<br />

Solution flow rate (g/hr) 6<br />

Ar carrier gas flow rate (sccm) 300<br />

Vaporizer temperature (˚C) 175<br />

Oxygen flow rate (sccm) 300<br />

101

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