CHEMICAL VAPOR DEPOSITION OF THIN FILM MATERIALS FOR ...

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fixing the other conditions as follows: plasma power 100W, substrate T 250˚C, pressure 0.1 torr, TDMAH pulse 5 s, hydrogen plasma 25s, and the purge time after hydrogen plasma is 5s, the purging time after TDMAH pulse is adjusted. As one can see in Fig.33, with increasing purging time from 15 to 35 s the oxygen concentration in the thin film has been reduced to around 6 at%. Longer purging time than 35s doesn't have much effect and make the thin film growth even slower. Fig. 33. The effect of purging time on oxygen incorporation. By using this purging time, other PEALD processing conditions are studied to see their effects on thin film surface chemistry. Surface chemical compositions of thin films deposited at different temperatures, pressures and plasma powers are listed in table 2. Apart from the desired Table 2. In vacuo XPS results of thin film surface chemical composition at different experimental conditions. Plasma Power (W) Substrate Temperature (˚C) Reaction Pressure (torr) Chemical composition (atom %) Hf N C O 100 150 0.1 33.6 (±2.4) 36.1 (±2.7) 18.1 (±1.3) 12.1 (±1.5) 100 250 0.1 38.6 (±2.6) 39.4 (±2.3) 18.7 (±1.2) 3.3 (±1.0) 100 350 0.1 35.9 (±2.2) 37.6 (±2.4) 19.8 (±1.2) 6.6 (±0.9) 50 250 0.15 35.3 (±1.9) 39.9 (± 3.0) 20.8 (±2.0) 4.0 (±1.0) 100 250 0.15 30.7 (±2.2) 34.3 (±2.8) 27.5 (±1.4) 7.5 (±0.8) 150 250 0.15 34.6 (±2.7) 38.7 (±3.1) 17.6 (±1.8) 9.1 (±1.4) 65
Hf and N elements, incorporation of C and O on the thin film surface is also found. Similar results have been reported by other groups, which were attributed to contamination from sample air exposure.[71,72] This explanation is apparently unconvincing considering that the same phenomena happened in our in-vacuo XPS analysis. To better understand the chemistry happening in the ALD process, an XPS depth profile analysis was carried out using a 5kV Ar + ion gun. The XPS spectra and quantitative chemical composition changing with etching depth are shown in Fig.34 and table 3, respectively. Fig. 34. XPS depth profile analysis of (a) Hf4f (b) N1s and (c) C1s in an as deposited HfNxCy thin film. Sample prepared at 250˚C, 0.15 torr, 100W. 66
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CHEMICAL VAPOR DEPOSITION OF THIN F
Page 3 and 4:
ABSTRACT Chemical vapor deposition
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DEDICATION This dissertation is ded
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φ In-plane tilt angle of X-ray dif
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ACKNOWLEDGMENTS It is my pleasure t
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CONTENTS ABSTRACT .................
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3.2.1 Introduction ................
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LIST OF TABLES Table 1. Hafnium ami
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indicated by the complex FMR curve.
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Fig. 49. Ferromagnetic resonance cu
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growth rate, good step coverage and
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growth of thin film oxides due to t
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one can uniformly deliver precursor
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for the next reaction step as shown
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Fig. 3. Schematic of a typical dire
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is predominantly dependent on syste
Page 33 and 34: J r J A -D n b-n 0 δ n or for the
Page 35 and 36: surface passivation with certain in
Page 37 and 38: ay spectroscopy (EDS), Wavelength d
Page 39 and 40: incidence angle is larger than cert
Page 41 and 42: epresenting those characteristic ph
Page 43 and 44: 1.2.3.3 X-ray Diffraction (XRD) X-r
Page 45 and 46: exhibit diffraction peaks in the no
Page 47 and 48: (nanometers to tens of nanometers),
Page 49 and 50: strongest absorption of microwave s
Page 51 and 52: pinch-off to indicate the lack of a
Page 53 and 54: coupling is from unbound ferrite-fe
Page 55 and 56: diffusion barrier material in micro
Page 57 and 58: Fig. 14. A cross sectional scanning
Page 59 and 60: In spite of the same spinel structu
Page 61 and 62: ferrites has been investigated exte
Page 63 and 64: systems is showed in Fig.18.[83] As
Page 65 and 66: precursor vaporization process, e.g
Page 67 and 68: CHAPTER 3. PLASMA ENHANCED ATOMIC L
Page 69 and 70: the initial surface chemistry for t
Page 71 and 72: delay time of 2 seconds between spe
Page 73 and 74: Kcal/mol respectively. The stronger
Page 75 and 76: negative slope) behavior in the pum
Page 77 and 78: the existence of both physisorbed a
Page 79 and 80: decomposition products (Hf-H) and g
Page 81 and 82: dried by ultra high purity N2 gas.
Page 83: pressure for XPS analysis is around
Page 87 and 88: [150,151] This is a unique feature
Page 89 and 90: software. The thickness results are
Page 91 and 92: CHAPTER 4. DIRECT LIQUID INJECTION
Page 93 and 94: film growth region. The properties
Page 95 and 96: solution was accurately controlled
Page 97 and 98: size). For the rocking curve analys
Page 99 and 100: oxygen does not participate in the
Page 101 and 102: ecause vapor velocity cannot be cha
Page 103 and 104: Fig. 40. Cross-sectional view by fi
Page 105 and 106: the MgAl2O4 substrate confirms cube
Page 107 and 108: pattern. Fig.44(b) has diffraction
Page 109 and 110: We have used an AGM (Alternating Gr
Page 111 and 112: as derived equations for different
Page 113 and 114: deposited at 600˚C is the lowest.
Page 115 and 116: wave states degenerate with the FMR
Page 117 and 118: Fig. 53. ϕ-scan of nickel ferrite
Page 119 and 120: Surface roughness characterized by
Page 121 and 122: Fig. 56. X-ray diffraction θ-2θ c
Page 123 and 124: 4.4 Conclusion In summary, we have
Page 125 and 126: CHAPTER 5. DIRECT LIQUID INJECTION
Page 127 and 128: eaction zone of the tube furnace is
Page 129 and 130: Fig. 58. X-ray diffraction characte
Page 131 and 132: interface. This phenomenon probably
Page 133 and 134: 6.1 Conclusion CHAPTER 6. CONCLUSIO
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the temperature range of 600˚C to
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such as PMN-PT and PZN-PT. CVD proc
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[18]. L. S.-J. Peng, X. X. Xi, B. H
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[54]. B. O. Johansson, J. -E. Sundg
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[96]. J. D. Adam, S. V. Krishnaswam
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[136]. J. Zhao, V. Fuflyigin, F. Wa
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APPENDIX A: LabVIEW PROGRAM FOR PEA
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APPENDIX B: TDMAH MOLECULAR STRUCTU
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H 18 B19 2 A18 1 D17 H 18 B20 2 A19
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