CHEMICAL VAPOR DEPOSITION OF THIN FILM MATERIALS FOR ...

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deposition temperature. High resolution XRD measurement has showed that the as deposited thin films have out-of-plane lattice parameters slightly smaller than the bulk value, which indicates the existence of tensile stress in the thin films. This tensile stress is much smaller than those from films grown on MgO (100) substrates and therefore no surface cracking has been observed for films as thick as 1 micron. ω-scan and ϕ-scan have been carried out to characterize the out-of- plane and in plane texture of the as deposited thin films. The FWHM values of the ω-scan of thin films deposited at different temperatures are in the range of 0.6 to 0.7 and show decreasing trend with increasing deposition temperature. Fig.53 shows the ϕ-scan result of nickel ferrite thin film deposited on MgO(111) at 700˚C. The {400} and {200} planes of the nickel ferrite film and the MgO substrate were scanned in plane. The three 120˚ separated peaks indicate the three-fold symmetry of the (111) orientation and the match between those from film and substrate represents the epitaxial growth. Fig. 52. X-ray diffraction θ-2θ scan of nickel ferrite films grown on MgO(111) substrate at different temperatures. 97
Fig. 53. ϕ-scan of nickel ferrite film grown on MgO(111) at 700˚C. {400} and {200} planes from the film and substrate were scanned respectively. Fig. 54. Atomic force microscopy images of nickel ferrite films grown on MgO(111) substrate at different temperatures. All the images were scanned in a range of 5 μm by 5 μm. The RMS roughness for films deposited at 500˚C, 600˚C, 700˚C and 800˚C are 27 nm, 89 nm, 2.7 nm and 3.5 nm respectively. Fig.54 showed the surface topography of nickel ferrite films deposited on MgO(111) at different temperatures by AFM. As can be seen, the best surface roughness is achieved at the temperature of 700˚C, which is different from the results of deposition on MgAl2O4 (100) and MgO(100). This can be attributed to the difference of both surface energy and surface diffusion behavior of different substrates. Magnetic and microwave properties of the as deposited thin films are also measured by VSM and FMR respectively. The saturation magnetization (Ms) values of these films are in the range of 250~300 emu/cc. Different from those deposited on 98
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CHEMICAL VAPOR DEPOSITION OF THIN F
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ABSTRACT Chemical vapor deposition
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DEDICATION This dissertation is ded
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φ In-plane tilt angle of X-ray dif
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ACKNOWLEDGMENTS It is my pleasure t
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CONTENTS ABSTRACT .................
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3.2.1 Introduction ................
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LIST OF TABLES Table 1. Hafnium ami
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indicated by the complex FMR curve.
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Fig. 49. Ferromagnetic resonance cu
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growth rate, good step coverage and
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growth of thin film oxides due to t
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one can uniformly deliver precursor
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for the next reaction step as shown
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Fig. 3. Schematic of a typical dire
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is predominantly dependent on syste
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J r J A -D n b-n 0 δ n or for the
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surface passivation with certain in
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ay spectroscopy (EDS), Wavelength d
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incidence angle is larger than cert
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epresenting those characteristic ph
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1.2.3.3 X-ray Diffraction (XRD) X-r
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exhibit diffraction peaks in the no
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(nanometers to tens of nanometers),
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strongest absorption of microwave s
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pinch-off to indicate the lack of a
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coupling is from unbound ferrite-fe
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diffusion barrier material in micro
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Fig. 14. A cross sectional scanning
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In spite of the same spinel structu
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ferrites has been investigated exte
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systems is showed in Fig.18.[83] As
Page 65 and 66: precursor vaporization process, e.g
Page 67 and 68: CHAPTER 3. PLASMA ENHANCED ATOMIC L
Page 69 and 70: the initial surface chemistry for t
Page 71 and 72: delay time of 2 seconds between spe
Page 73 and 74: Kcal/mol respectively. The stronger
Page 75 and 76: negative slope) behavior in the pum
Page 77 and 78: the existence of both physisorbed a
Page 79 and 80: decomposition products (Hf-H) and g
Page 81 and 82: dried by ultra high purity N2 gas.
Page 83 and 84: pressure for XPS analysis is around
Page 85 and 86: Hf and N elements, incorporation of
Page 87 and 88: [150,151] This is a unique feature
Page 89 and 90: software. The thickness results are
Page 91 and 92: CHAPTER 4. DIRECT LIQUID INJECTION
Page 93 and 94: film growth region. The properties
Page 95 and 96: solution was accurately controlled
Page 97 and 98: size). For the rocking curve analys
Page 99 and 100: oxygen does not participate in the
Page 101 and 102: ecause vapor velocity cannot be cha
Page 103 and 104: Fig. 40. Cross-sectional view by fi
Page 105 and 106: the MgAl2O4 substrate confirms cube
Page 107 and 108: pattern. Fig.44(b) has diffraction
Page 109 and 110: We have used an AGM (Alternating Gr
Page 111 and 112: as derived equations for different
Page 113 and 114: deposited at 600˚C is the lowest.
Page 115: wave states degenerate with the FMR
Page 119 and 120: Surface roughness characterized by
Page 121 and 122: Fig. 56. X-ray diffraction θ-2θ c
Page 123 and 124: 4.4 Conclusion In summary, we have
Page 125 and 126: CHAPTER 5. DIRECT LIQUID INJECTION
Page 127 and 128: eaction zone of the tube furnace is
Page 129 and 130: Fig. 58. X-ray diffraction characte
Page 131 and 132: interface. This phenomenon probably
Page 133 and 134: 6.1 Conclusion CHAPTER 6. CONCLUSIO
Page 135 and 136: the temperature range of 600˚C to
Page 137 and 138: such as PMN-PT and PZN-PT. CVD proc
Page 139 and 140: [18]. L. S.-J. Peng, X. X. Xi, B. H
Page 141 and 142: [54]. B. O. Johansson, J. -E. Sundg
Page 143 and 144: [96]. J. D. Adam, S. V. Krishnaswam
Page 145 and 146: [136]. J. Zhao, V. Fuflyigin, F. Wa
Page 147 and 148: APPENDIX A: LabVIEW PROGRAM FOR PEA
Page 149 and 150: APPENDIX B: TDMAH MOLECULAR STRUCTU
Page 151 and 152: H 18 B19 2 A18 1 D17 H 18 B20 2 A19
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