CHEMICAL VAPOR DEPOSITION OF THIN FILM MATERIALS FOR ...

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Fig. 61. LabVIEW block diagram for PC control of automatic PEALD process. Plasma enhanced atomic layer deposition (PEALD) of HfN thin films is carried out in a home built ALD system. The alternative introduction of processing gases and pulse of plasma power are synchronized by a self written PC controlled LabVIEW program, as shown in Fig. 61. The main equipments used and their communication parameters are listed below. 1. RF power generator (Advanced Energy Industries, Inc. RF series 10/25 with frequency of 13.56 MHz and maximum power of 550 W) RS232 communication interface: Baud rate 9600; Date bits 8; Stop bit 1; Parity No. 2. Programmable relay for gas pulsing (OMRON Electronics/ZEN) 2-wire RS485 interface: Baud rate 9600; Date bits 7; Stop bit 2; Parity Even. 3. Pressure measurement and control (MKS 146) RS232 interface (DE-9 cable): Baud rate 9600; Date bits 7; Stop bit 1; Parity Even. 129
APPENDIX B: TDMAH MOLECULAR STRUCTUR OPTIMIZATION AND IR FREQUENCY CALCULATION 130
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CHEMICAL VAPOR DEPOSITION OF THIN F
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ABSTRACT Chemical vapor deposition
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DEDICATION This dissertation is ded
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φ In-plane tilt angle of X-ray dif
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ACKNOWLEDGMENTS It is my pleasure t
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CONTENTS ABSTRACT .................
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3.2.1 Introduction ................
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LIST OF TABLES Table 1. Hafnium ami
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indicated by the complex FMR curve.
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Fig. 49. Ferromagnetic resonance cu
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growth rate, good step coverage and
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growth of thin film oxides due to t
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one can uniformly deliver precursor
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for the next reaction step as shown
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Fig. 3. Schematic of a typical dire
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is predominantly dependent on syste
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J r J A -D n b-n 0 δ n or for the
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surface passivation with certain in
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ay spectroscopy (EDS), Wavelength d
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incidence angle is larger than cert
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epresenting those characteristic ph
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1.2.3.3 X-ray Diffraction (XRD) X-r
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exhibit diffraction peaks in the no
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(nanometers to tens of nanometers),
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strongest absorption of microwave s
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pinch-off to indicate the lack of a
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coupling is from unbound ferrite-fe
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diffusion barrier material in micro
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Fig. 14. A cross sectional scanning
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In spite of the same spinel structu
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ferrites has been investigated exte
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systems is showed in Fig.18.[83] As
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precursor vaporization process, e.g
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CHAPTER 3. PLASMA ENHANCED ATOMIC L
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the initial surface chemistry for t
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delay time of 2 seconds between spe
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Kcal/mol respectively. The stronger
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negative slope) behavior in the pum
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the existence of both physisorbed a
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decomposition products (Hf-H) and g
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dried by ultra high purity N2 gas.
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pressure for XPS analysis is around
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Hf and N elements, incorporation of
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[150,151] This is a unique feature
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software. The thickness results are
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CHAPTER 4. DIRECT LIQUID INJECTION
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film growth region. The properties
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solution was accurately controlled
Page 97 and 98: size). For the rocking curve analys
Page 99 and 100: oxygen does not participate in the
Page 101 and 102: ecause vapor velocity cannot be cha
Page 103 and 104: Fig. 40. Cross-sectional view by fi
Page 105 and 106: the MgAl2O4 substrate confirms cube
Page 107 and 108: pattern. Fig.44(b) has diffraction
Page 109 and 110: We have used an AGM (Alternating Gr
Page 111 and 112: as derived equations for different
Page 113 and 114: deposited at 600˚C is the lowest.
Page 115 and 116: wave states degenerate with the FMR
Page 117 and 118: Fig. 53. ϕ-scan of nickel ferrite
Page 119 and 120: Surface roughness characterized by
Page 121 and 122: Fig. 56. X-ray diffraction θ-2θ c
Page 123 and 124: 4.4 Conclusion In summary, we have
Page 125 and 126: CHAPTER 5. DIRECT LIQUID INJECTION
Page 127 and 128: eaction zone of the tube furnace is
Page 129 and 130: Fig. 58. X-ray diffraction characte
Page 131 and 132: interface. This phenomenon probably
Page 133 and 134: 6.1 Conclusion CHAPTER 6. CONCLUSIO
Page 135 and 136: the temperature range of 600˚C to
Page 137 and 138: such as PMN-PT and PZN-PT. CVD proc
Page 139 and 140: [18]. L. S.-J. Peng, X. X. Xi, B. H
Page 141 and 142: [54]. B. O. Johansson, J. -E. Sundg
Page 143 and 144: [96]. J. D. Adam, S. V. Krishnaswam
Page 145 and 146: [136]. J. Zhao, V. Fuflyigin, F. Wa
Page 147: APPENDIX A: LabVIEW PROGRAM FOR PEA
Page 151 and 152: H 18 B19 2 A18 1 D17 H 18 B20 2 A19
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