CHEMICAL VAPOR DEPOSITION OF THIN FILM MATERIALS FOR ...

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a, b, c, Lattice parameters AFM Atomic force microscopy LIST <strong>OF</strong> ABBREVIATIONS AND SYMBOLS AGM Alternating gradient magnetometer ALD Atomic layer deposition at% Atomic percentage a.u. Arbitrary units B Magnetic induction BDE Bond dissociation energy BTO Barium titanate (BaTiO3) C Light speed or capacitance CVD Chemical vapor deposition d Lattice plane spacing D Diffusivity δ Conductivity or boundary layer DI Deionized water DOE Design of experiments DRAM Dynamic random access memory E Energy or electric field EDX Energy dispersive X-ray spectroscopy EF Fermi energy v
φ In-plane tilt angle of X-ray diffraction measurement FET Field effect transistor FMR Ferromagnetic resonance g Effective g factor GPC Growth per cycle γ Geromagnetic ratio GMR Giant magnetoresistance HC Coercivity field h Planck constant [h k l] Miller indices for a direction indexed by h along x axis, k along y axis, and l along z axis (h k l) Miller indices for a plane normal to the [h k l] direction IC Integrated circuit λ Light wavelength LFO Lithium ferrite (LiFe5O8) LPCVD Low pressure CVD M Magnetization MS Saturation magnetization MBE Molecular beam epitaxy MOCVD Metal organic chemical vapor deposition MR Magnetoresistance MRAM Magnetic random access memory μB Bohr magneton vi
Page 1 and 2: CHEMICAL VAPOR DEPOSITION OF THIN F
Page 3 and 4: ABSTRACT Chemical vapor deposition
Page 5: DEDICATION This dissertation is ded
Page 9 and 10: ACKNOWLEDGMENTS It is my pleasure t
Page 11 and 12: CONTENTS ABSTRACT .................
Page 13 and 14: 3.2.1 Introduction ................
Page 15 and 16: LIST OF TABLES Table 1. Hafnium ami
Page 17 and 18: indicated by the complex FMR curve.
Page 19 and 20: Fig. 49. Ferromagnetic resonance cu
Page 21 and 22: growth rate, good step coverage and
Page 23 and 24: growth of thin film oxides due to t
Page 25 and 26: one can uniformly deliver precursor
Page 27 and 28: for the next reaction step as shown
Page 29 and 30: Fig. 3. Schematic of a typical dire
Page 31 and 32: is predominantly dependent on syste
Page 33 and 34: J r J A -D n b-n 0 δ n or for the
Page 35 and 36: surface passivation with certain in
Page 37 and 38: ay spectroscopy (EDS), Wavelength d
Page 39 and 40: incidence angle is larger than cert
Page 41 and 42: epresenting those characteristic ph
Page 43 and 44: 1.2.3.3 X-ray Diffraction (XRD) X-r
Page 45 and 46: exhibit diffraction peaks in the no
Page 47 and 48: (nanometers to tens of nanometers),
Page 49 and 50: strongest absorption of microwave s
Page 51 and 52: pinch-off to indicate the lack of a
Page 53 and 54: coupling is from unbound ferrite-fe
Page 55 and 56: diffusion barrier material in micro
Page 57 and 58:
Fig. 14. A cross sectional scanning
Page 59 and 60:
In spite of the same spinel structu
Page 61 and 62:
ferrites has been investigated exte
Page 63 and 64:
systems is showed in Fig.18.[83] As
Page 65 and 66:
precursor vaporization process, e.g
Page 67 and 68:
CHAPTER 3. PLASMA ENHANCED ATOMIC L
Page 69 and 70:
the initial surface chemistry for t
Page 71 and 72:
delay time of 2 seconds between spe
Page 73 and 74:
Kcal/mol respectively. The stronger
Page 75 and 76:
negative slope) behavior in the pum
Page 77 and 78:
the existence of both physisorbed a
Page 79 and 80:
decomposition products (Hf-H) and g
Page 81 and 82:
dried by ultra high purity N2 gas.
Page 83 and 84:
pressure for XPS analysis is around
Page 85 and 86:
Hf and N elements, incorporation of
Page 87 and 88:
[150,151] This is a unique feature
Page 89 and 90:
software. The thickness results are
Page 91 and 92:
CHAPTER 4. DIRECT LIQUID INJECTION
Page 93 and 94:
film growth region. The properties
Page 95 and 96:
solution was accurately controlled
Page 97 and 98:
size). For the rocking curve analys
Page 99 and 100:
oxygen does not participate in the
Page 101 and 102:
ecause vapor velocity cannot be cha
Page 103 and 104:
Fig. 40. Cross-sectional view by fi
Page 105 and 106:
the MgAl2O4 substrate confirms cube
Page 107 and 108:
pattern. Fig.44(b) has diffraction
Page 109 and 110:
We have used an AGM (Alternating Gr
Page 111 and 112:
as derived equations for different
Page 113 and 114:
deposited at 600˚C is the lowest.
Page 115 and 116:
wave states degenerate with the FMR
Page 117 and 118:
Fig. 53. ϕ-scan of nickel ferrite
Page 119 and 120:
Surface roughness characterized by
Page 121 and 122:
Fig. 56. X-ray diffraction θ-2θ c
Page 123 and 124:
4.4 Conclusion In summary, we have
Page 125 and 126:
CHAPTER 5. DIRECT LIQUID INJECTION
Page 127 and 128:
eaction zone of the tube furnace is
Page 129 and 130:
Fig. 58. X-ray diffraction characte
Page 131 and 132:
interface. This phenomenon probably
Page 133 and 134:
6.1 Conclusion CHAPTER 6. CONCLUSIO
Page 135 and 136:
the temperature range of 600˚C to
Page 137 and 138:
such as PMN-PT and PZN-PT. CVD proc
Page 139 and 140:
[18]. L. S.-J. Peng, X. X. Xi, B. H
Page 141 and 142:
[54]. B. O. Johansson, J. -E. Sundg
Page 143 and 144:
[96]. J. D. Adam, S. V. Krishnaswam
Page 145 and 146:
[136]. J. Zhao, V. Fuflyigin, F. Wa
Page 147 and 148:
APPENDIX A: LabVIEW PROGRAM FOR PEA
Page 149 and 150:
APPENDIX B: TDMAH MOLECULAR STRUCTU
Page 151 and 152:
H 18 B19 2 A18 1 D17 H 18 B20 2 A19
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