CHEMICAL VAPOR DEPOSITION OF THIN FILM MATERIALS FOR ...

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Fig. 35. (a)Cross sectional view of HfNxCy on SiO2/Si (b)HRTEM images of the HfNxCy-SiO2 and SiO2-Si interfaces (c) surface topography by AFM, RMS roughness is 0.8nm. Fig. 36. X-ray reflectivity measurement of the as deposited HfNxCy films at different plasma powers. The ALD cycles of deposition are 200, 200, and 300 for 50W, 100W, and 150W, respectively. X-ray reflectivity (XRR) results of the as deposited thin films under different plasma powers are showed in Fig.36. The thin film thickness is fitted by using the Philips WinGixa 69
software. The thickness results are very close to those obtained by cross sectional SEM measurement. Thin film roughness is in the range of few angstroms, which is indicated clearly by the long range interference patterns and coincides with the AFM measurement. Fig.37 (a) shows the effect of plasma power on thin film growth rate and resistivity. Both the growth rate and resistivity decrease with increasing plasma power from 50W to 150W. Compared to the dramatic decrease of thin film resistivity, the growth rate change is much smoother. The growth rate around 0.18nm/cycle is reasonable for a practical ALD method, in which only a fraction of a monolayer (ML) is deposited for each cycle. The small decrease of growth rate might be explained by a plasma etching effect. Fig.37 (b) shows the effect of plasma power on the chemical states of surface Hf. The increased peak ratio of Hf 4f5/2 to Hf 4f7/2 at high plasma power indicates the formation of more hafnium nitride phase on the surface.[150,151] This result can be a good explanation of the decreased thin film resistivity at higher plasma powers. Fig. 37. (a) Plasma power effect on thin film growth rate and resistivity (b) Plasma power effect on chemical states of surface Hf. 70
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CHEMICAL VAPOR DEPOSITION OF THIN F
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ABSTRACT Chemical vapor deposition
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DEDICATION This dissertation is ded
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φ In-plane tilt angle of X-ray dif
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ACKNOWLEDGMENTS It is my pleasure t
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CONTENTS ABSTRACT .................
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3.2.1 Introduction ................
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LIST OF TABLES Table 1. Hafnium ami
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indicated by the complex FMR curve.
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Fig. 49. Ferromagnetic resonance cu
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growth rate, good step coverage and
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growth of thin film oxides due to t
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one can uniformly deliver precursor
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for the next reaction step as shown
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Fig. 3. Schematic of a typical dire
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is predominantly dependent on syste
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J r J A -D n b-n 0 δ n or for the
Page 35 and 36:
surface passivation with certain in
Page 37 and 38: ay spectroscopy (EDS), Wavelength d
Page 39 and 40: incidence angle is larger than cert
Page 41 and 42: epresenting those characteristic ph
Page 43 and 44: 1.2.3.3 X-ray Diffraction (XRD) X-r
Page 45 and 46: exhibit diffraction peaks in the no
Page 47 and 48: (nanometers to tens of nanometers),
Page 49 and 50: strongest absorption of microwave s
Page 51 and 52: pinch-off to indicate the lack of a
Page 53 and 54: coupling is from unbound ferrite-fe
Page 55 and 56: diffusion barrier material in micro
Page 57 and 58: Fig. 14. A cross sectional scanning
Page 59 and 60: In spite of the same spinel structu
Page 61 and 62: ferrites has been investigated exte
Page 63 and 64: systems is showed in Fig.18.[83] As
Page 65 and 66: precursor vaporization process, e.g
Page 67 and 68: CHAPTER 3. PLASMA ENHANCED ATOMIC L
Page 69 and 70: the initial surface chemistry for t
Page 71 and 72: delay time of 2 seconds between spe
Page 73 and 74: Kcal/mol respectively. The stronger
Page 75 and 76: negative slope) behavior in the pum
Page 77 and 78: the existence of both physisorbed a
Page 79 and 80: decomposition products (Hf-H) and g
Page 81 and 82: dried by ultra high purity N2 gas.
Page 83 and 84: pressure for XPS analysis is around
Page 85 and 86: Hf and N elements, incorporation of
Page 87: [150,151] This is a unique feature
Page 91 and 92: CHAPTER 4. DIRECT LIQUID INJECTION
Page 93 and 94: film growth region. The properties
Page 95 and 96: solution was accurately controlled
Page 97 and 98: size). For the rocking curve analys
Page 99 and 100: oxygen does not participate in the
Page 101 and 102: ecause vapor velocity cannot be cha
Page 103 and 104: Fig. 40. Cross-sectional view by fi
Page 105 and 106: the MgAl2O4 substrate confirms cube
Page 107 and 108: pattern. Fig.44(b) has diffraction
Page 109 and 110: We have used an AGM (Alternating Gr
Page 111 and 112: as derived equations for different
Page 113 and 114: deposited at 600˚C is the lowest.
Page 115 and 116: wave states degenerate with the FMR
Page 117 and 118: Fig. 53. ϕ-scan of nickel ferrite
Page 119 and 120: Surface roughness characterized by
Page 121 and 122: Fig. 56. X-ray diffraction θ-2θ c
Page 123 and 124: 4.4 Conclusion In summary, we have
Page 125 and 126: CHAPTER 5. DIRECT LIQUID INJECTION
Page 127 and 128: eaction zone of the tube furnace is
Page 129 and 130: Fig. 58. X-ray diffraction characte
Page 131 and 132: interface. This phenomenon probably
Page 133 and 134: 6.1 Conclusion CHAPTER 6. CONCLUSIO
Page 135 and 136: the temperature range of 600˚C to
Page 137 and 138: such as PMN-PT and PZN-PT. CVD proc
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[18]. L. S.-J. Peng, X. X. Xi, B. H
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[54]. B. O. Johansson, J. -E. Sundg
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[96]. J. D. Adam, S. V. Krishnaswam
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[136]. J. Zhao, V. Fuflyigin, F. Wa
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APPENDIX A: LabVIEW PROGRAM FOR PEA
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APPENDIX B: TDMAH MOLECULAR STRUCTU
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H 18 B19 2 A18 1 D17 H 18 B20 2 A19
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