[37]. F. Fillot, T. Morel, S. Minoret, I. Matko, S. Maîtrejean, B. Guillaumot, B. Chenevier, T. Billon, Microelectron. Eng. 2005, 82, 248. [38]. J. K. Schaeffer, S. B. Samavedam, D. C. Gilmer, V. Dhandapani, P. J. Tobin, J. Mogab, B. - Y. Nguyen, B. E. White, Jr., S. Dakshina-Murthy, R. S. Rai, Z. -X. Jiang, R. Martin, M. V. Raymond, M. Zavala, L. B. La, J. A. Smith, R. Garcia, D. Roan, M. Kottke, R. B. Gregory, J. Vac. Sci. Technol. B 2003, 21, 11. [39]. Y. T. Hou, F. Y. Yen, P. F. Hsu, V. S. Chang, P. S. Lim, C. L. Hung, L. G. Yao, J. C. Jiang, H. J. Lin, Y. Jin, S. M. Jang, H. J. Tao, S. C. Chen, M. S. Liang, Electron Device Meeting, IEDM Technical Digest. IEEE international 2005, 5-5, 31. [40]. Q. X. Jia, J. R. Groves, P. Arendt, Y. Fan, A. T. Findikoglu, S. R. Foltyn, H. Jiang, F. A. Miranda, Appl. Phys. Lett. 1999, 74, 1564. [41]. W. J. Kim, W. Chang, S. B. Qadri, H. D. Wu, J. M. Pond, S. W. Kirchoefer, H. S. Newman, D. B. Chrisey, J. S. Horwitz, Appl. Phys. A 2000, 71, 7. [42]. V. E. Demidov, B. A. Kalinikos, P. Edenhofer, J. Appl. Phys. 2002, 91, 10007. [43]. A. A. Semenov, S. F. Karmanenko, V. E. Demidov, B. A. Kalinikos, Appl. Phys. Lett. 2006, 88, 033503. [44]. A. A. Semenov, S. F. Karmanenko, B. A. Kalinikos, A. N. Slavin, G. Srinivasan, J. V. Mantese, Integr. Ferroelectr. 2005, 75, 199. [45]. A. S. Tatarenko, A. B. Ustinov, G. Srinivasan, V. M. Petrov, M. I. Bichurin, J. Appl. Phys. 2010, 108, 063923. [46]. Y. -Y. Song, J. Das, P. Krivosik, N. Mo, C. E. Patton, Appl. Phys. Lett. 2009, 94, 182505. [47]. S. Shinkai, K. Sasaki, Jpn. J. Appl. Phys. 1999, 38, 2097. [48]. Y. Gotoh, M. Liao, H. Tsuji, J. Ishikawa, Jpn. J. Appl. Phys. 2003, 42, L778. [49]. R. Fujii, Y. Gotoh, M. Y. Liao, H. Tsuji, J. Ishikawa, Vacuum 2006, 80, 832. [50]. M. H. Staia, D. G. Bhat, E. S. Puchi-Cabrera, J. Bost, Wear 2006 261, 540. [51]. J. J. Oakes, Thin Solid Films 107 (1983) 159. [52]. H. Y. Yu, J. F. Kang, C. Ren, J. D. Chen, Y. T. Hou, C. Shen, M. F. Li, D. S. H. Chan, K. L. Bera, C. H. Tung, D.-L. Kwong, IEEE Elec. Dev. Lett. 2004, 25, 70. [53]. R. Nowak, C.L. Li, Thin Solid Films 1997, 305, 297. 121
[54]. B. O. Johansson, J. –E. Sundgren, U. Helmersson, M.K. Hibbs, Appl. Phys. Lett. 1984, 44, 670. [55]. P. R. Aron, A. Grill, Thin Solid Films 1982, 96, 87. [56]. M. Y. Liao, Y. Gotoh, H. Tsuji, J. Ishikawa, J. Vac. Sci. Technol. A 2004, 22, 214. [57]. L. Yuan, G. Fang, C. Li, M. Wang, N. Liu, L. Ai, Y. Cheng, H. Gao, X. Zhao, Appl. Surf. Sci. 2007, 253, 8538. [58]. Y. Gotoh, M.Y. Liao, H. Tsuji, J. Ishikawa, Jpn. J. Appl. Phys. 2003, 42, L778. [59]. R. A. Araujo, X. Zhang, H. Wang, J. Electron. Mater. 2008, 37, 1828. [60]. A. Arranz, Surf. Sci. 2004, 563, 1. [61]. K. Volz, M. Kiuchi, W. Ensinger, Surf. Coat. Technol. 1999, 120-121, 353. [62]. R. Fix, R.G. Gordon, D.M. Hoffman, Chem. Mater. 1991, 3, 1138. [63]. D. M. Hausmann, E. Kim, J. Becker, R. G. Gordon, Chem. Mater. 2002, 14, 4350. [64]. H. Itoh, K. Kato, K. Sugiyama, J. Mater. Sci. 1986, 21, 751. [65]. D. M. Hoffman, Polyhedron 1994, 13, 1169. [66]. J. H. Jang, T. J. Park, J. H. Kim, K. D. Na, W. Y. Park, M. Kim, C. S. Hwang, J. Electrochem. Soc. 2009, 156, H76. [67]. J. S. Becker, E. Kim, R. G. Gordon, Chem. Mater. 2004, 16, 3497. [68]. W. Wang, T. Nabatame, Y. Shimogaki, Microelectron. Eng. 2008, 85, 320. [69]. W. Wang, T. Nabatame, Y. Shimogaki, Jpn, J. Appl. Phys. 2004, 43, L1445. [70]. Y. Kim, A. Baunemann, H. Parala, A. Devi, R.A. Fischer, Chem. Vap. Deposition 2005, 11, 294. [71]. E. J. Kim, D. H. Kim, Electrochem. Solid State Lett. 2006, 9, C123. [72]. S. Consiglio, W. Zeng, N. Berliner, E.T. Eisenbraun, J. Electrochem. Soc. 2008, 155, H196. [73]. V. G. Harris, A. Geiler, Y. Chen, S. D. Yoon, M. Wu, A. Yang, Z. Chen, P. He, P. V. Parimi, X. Zuo, C. E. Patton, M. Abe, O. Acher, C. Vittoria, J. Magn. Magn. Mater. 2009, 321, 2035. [74]. C. N. Chinnasamy, A. Narayanasamy, N. Ponpandian, K. Chattopadhyay, K. Shinoda, B. 122
- Page 1 and 2:
CHEMICAL VAPOR DEPOSITION OF THIN F
- Page 3 and 4:
ABSTRACT Chemical vapor deposition
- Page 5 and 6:
DEDICATION This dissertation is ded
- Page 7 and 8:
φ In-plane tilt angle of X-ray dif
- Page 9 and 10:
ACKNOWLEDGMENTS It is my pleasure t
- Page 11 and 12:
CONTENTS ABSTRACT .................
- Page 13 and 14:
3.2.1 Introduction ................
- Page 15 and 16:
LIST OF TABLES Table 1. Hafnium ami
- Page 17 and 18:
indicated by the complex FMR curve.
- Page 19 and 20:
Fig. 49. Ferromagnetic resonance cu
- Page 21 and 22:
growth rate, good step coverage and
- Page 23 and 24:
growth of thin film oxides due to t
- Page 25 and 26:
one can uniformly deliver precursor
- Page 27 and 28:
for the next reaction step as shown
- Page 29 and 30:
Fig. 3. Schematic of a typical dire
- Page 31 and 32:
is predominantly dependent on syste
- Page 33 and 34:
J r J A -D n b-n 0 δ n or for the
- Page 35 and 36:
surface passivation with certain in
- Page 37 and 38:
ay spectroscopy (EDS), Wavelength d
- Page 39 and 40:
incidence angle is larger than cert
- Page 41 and 42:
epresenting those characteristic ph
- Page 43 and 44:
1.2.3.3 X-ray Diffraction (XRD) X-r
- Page 45 and 46:
exhibit diffraction peaks in the no
- Page 47 and 48:
(nanometers to tens of nanometers),
- Page 49 and 50:
strongest absorption of microwave s
- Page 51 and 52:
pinch-off to indicate the lack of a
- Page 53 and 54:
coupling is from unbound ferrite-fe
- Page 55 and 56:
diffusion barrier material in micro
- Page 57 and 58:
Fig. 14. A cross sectional scanning
- Page 59 and 60:
In spite of the same spinel structu
- Page 61 and 62:
ferrites has been investigated exte
- Page 63 and 64:
systems is showed in Fig.18.[83] As
- Page 65 and 66:
precursor vaporization process, e.g
- Page 67 and 68:
CHAPTER 3. PLASMA ENHANCED ATOMIC L
- Page 69 and 70:
the initial surface chemistry for t
- Page 71 and 72:
delay time of 2 seconds between spe
- Page 73 and 74:
Kcal/mol respectively. The stronger
- Page 75 and 76:
negative slope) behavior in the pum
- Page 77 and 78:
the existence of both physisorbed a
- Page 79 and 80:
decomposition products (Hf-H) and g
- Page 81 and 82:
dried by ultra high purity N2 gas.
- Page 83 and 84:
pressure for XPS analysis is around
- Page 85 and 86:
Hf and N elements, incorporation of
- Page 87 and 88:
[150,151] This is a unique feature
- Page 89 and 90: software. The thickness results are
- Page 91 and 92: CHAPTER 4. DIRECT LIQUID INJECTION
- Page 93 and 94: film growth region. The properties
- Page 95 and 96: solution was accurately controlled
- Page 97 and 98: size). For the rocking curve analys
- Page 99 and 100: oxygen does not participate in the
- Page 101 and 102: ecause vapor velocity cannot be cha
- Page 103 and 104: Fig. 40. Cross-sectional view by fi
- Page 105 and 106: the MgAl2O4 substrate confirms cube
- Page 107 and 108: pattern. Fig.44(b) has diffraction
- Page 109 and 110: We have used an AGM (Alternating Gr
- Page 111 and 112: as derived equations for different
- Page 113 and 114: deposited at 600˚C is the lowest.
- Page 115 and 116: wave states degenerate with the FMR
- Page 117 and 118: Fig. 53. ϕ-scan of nickel ferrite
- Page 119 and 120: Surface roughness characterized by
- Page 121 and 122: Fig. 56. X-ray diffraction θ-2θ c
- Page 123 and 124: 4.4 Conclusion In summary, we have
- Page 125 and 126: CHAPTER 5. DIRECT LIQUID INJECTION
- Page 127 and 128: eaction zone of the tube furnace is
- Page 129 and 130: Fig. 58. X-ray diffraction characte
- Page 131 and 132: interface. This phenomenon probably
- Page 133 and 134: 6.1 Conclusion CHAPTER 6. CONCLUSIO
- Page 135 and 136: the temperature range of 600˚C to
- Page 137 and 138: such as PMN-PT and PZN-PT. CVD proc
- Page 139: [18]. L. S.-J. Peng, X. X. Xi, B. H
- Page 143 and 144: [96]. J. D. Adam, S. V. Krishnaswam
- Page 145 and 146: [136]. J. Zhao, V. Fuflyigin, F. Wa
- Page 147 and 148: APPENDIX A: LabVIEW PROGRAM FOR PEA
- Page 149 and 150: APPENDIX B: TDMAH MOLECULAR STRUCTU
- Page 151 and 152: H 18 B19 2 A18 1 D17 H 18 B20 2 A19