CHEMICAL VAPOR DEPOSITION OF THIN FILM MATERIALS FOR ...

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8. Blowing dry with ultra high purity N2. TDMAH molecular modeling and bond dissociation energy (BDE) calculation were carried out by Density Functional Theory (DFT) coupled in Gaussian 03 software. The calculations were performed at the DFT level with the hybrid gradient-corrected B3LYP exchange-correlation functional. The geometry optimizations and frequency calculations were done with the 6-31+G(d,p) basis set for the first row atoms and the LanL2DZ relativistic effective core potential (RECP) basis set for the Hf atom, All energies were corrected with the zero point energies (ZPE). The software and computing resources are from Alabama Supercomputer Authority. 3.2.3 Results and Discussion The TDMAH precursor was first characterized by ATR-FTIR in a 'liquid drop' experiment. Few drops of liquid TDMAH were loaded onto a Ge(100) ATR crystal in a nitrogen glove bag and the IR spectrum was taken under room temperature. The as taken IR spectrum is showed in Fig.23 (bottom). Since Ge (100) ATR crystal has a wider IR transmittance window than Si(100) at room temperature, vibrational modes as low as 700 cm -1 can be observed. The top spectrum is from DFT molecular modeling of a TDMAH free molecule. The molecular structure of TDMAH is fully optimized before the frequency calculation. As one can see, the experimental and theoretical results match very well in spite of a small shift of the peak positions. One possible reason is that the experimental measurement is for the liquid phase TDMAH and the inter molecular interaction could thus influence the electronic structure of the molecules. All the peaks have been identified by considering the theoretical results and certain previous experimental IR studies on transition metal amides.[145,146] Bond dissociation energies of Hf-N and N-C bonds in the TDMAH molecule have been calculated to be 78.4 Kcal/mol and 69.7 53
Kcal/mol respectively. The stronger Hf-N bond makes it thermodynamically possible for the deposition of HfN without any extra N source. Fig. 23. Experimental and theoretical modeled IR spectrum of TDMAH. In-situ monitoring of TDMAH adsorption on hydrogenated Si(100) surface is carried out at different substrate temperatures. Fig.24 shows the IR spectra after 2 min TDMAH adsorption at different crystal temperatures in the flowing mode. Fig. 24. IR spectra of TDMAH adsorption on hydrogenated Si(100) at different temperatures. 54
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CHEMICAL VAPOR DEPOSITION OF THIN F
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ABSTRACT Chemical vapor deposition
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DEDICATION This dissertation is ded
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φ In-plane tilt angle of X-ray dif
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ACKNOWLEDGMENTS It is my pleasure t
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CONTENTS ABSTRACT .................
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3.2.1 Introduction ................
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LIST OF TABLES Table 1. Hafnium ami
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indicated by the complex FMR curve.
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Fig. 49. Ferromagnetic resonance cu
Page 21 and 22: growth rate, good step coverage and
Page 23 and 24: growth of thin film oxides due to t
Page 25 and 26: one can uniformly deliver precursor
Page 27 and 28: for the next reaction step as shown
Page 29 and 30: Fig. 3. Schematic of a typical dire
Page 31 and 32: is predominantly dependent on syste
Page 33 and 34: J r J A -D n b-n 0 δ n or for the
Page 35 and 36: surface passivation with certain in
Page 37 and 38: ay spectroscopy (EDS), Wavelength d
Page 39 and 40: incidence angle is larger than cert
Page 41 and 42: epresenting those characteristic ph
Page 43 and 44: 1.2.3.3 X-ray Diffraction (XRD) X-r
Page 45 and 46: exhibit diffraction peaks in the no
Page 47 and 48: (nanometers to tens of nanometers),
Page 49 and 50: strongest absorption of microwave s
Page 51 and 52: pinch-off to indicate the lack of a
Page 53 and 54: coupling is from unbound ferrite-fe
Page 55 and 56: diffusion barrier material in micro
Page 57 and 58: Fig. 14. A cross sectional scanning
Page 59 and 60: In spite of the same spinel structu
Page 61 and 62: ferrites has been investigated exte
Page 63 and 64: systems is showed in Fig.18.[83] As
Page 65 and 66: precursor vaporization process, e.g
Page 67 and 68: CHAPTER 3. PLASMA ENHANCED ATOMIC L
Page 69 and 70: the initial surface chemistry for t
Page 71: delay time of 2 seconds between spe
Page 75 and 76: negative slope) behavior in the pum
Page 77 and 78: the existence of both physisorbed a
Page 79 and 80: decomposition products (Hf-H) and g
Page 81 and 82: dried by ultra high purity N2 gas.
Page 83 and 84: pressure for XPS analysis is around
Page 85 and 86: Hf and N elements, incorporation of
Page 87 and 88: [150,151] This is a unique feature
Page 89 and 90: software. The thickness results are
Page 91 and 92: CHAPTER 4. DIRECT LIQUID INJECTION
Page 93 and 94: film growth region. The properties
Page 95 and 96: solution was accurately controlled
Page 97 and 98: size). For the rocking curve analys
Page 99 and 100: oxygen does not participate in the
Page 101 and 102: ecause vapor velocity cannot be cha
Page 103 and 104: Fig. 40. Cross-sectional view by fi
Page 105 and 106: the MgAl2O4 substrate confirms cube
Page 107 and 108: pattern. Fig.44(b) has diffraction
Page 109 and 110: We have used an AGM (Alternating Gr
Page 111 and 112: as derived equations for different
Page 113 and 114: deposited at 600˚C is the lowest.
Page 115 and 116: wave states degenerate with the FMR
Page 117 and 118: Fig. 53. ϕ-scan of nickel ferrite
Page 119 and 120: Surface roughness characterized by
Page 121 and 122: Fig. 56. X-ray diffraction θ-2θ c
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4.4 Conclusion In summary, we have
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CHAPTER 5. DIRECT LIQUID INJECTION
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eaction zone of the tube furnace is
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Fig. 58. X-ray diffraction characte
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interface. This phenomenon probably
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6.1 Conclusion CHAPTER 6. CONCLUSIO
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the temperature range of 600˚C to
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such as PMN-PT and PZN-PT. CVD proc
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[18]. L. S.-J. Peng, X. X. Xi, B. H
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[54]. B. O. Johansson, J. -E. Sundg
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[96]. J. D. Adam, S. V. Krishnaswam
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[136]. J. Zhao, V. Fuflyigin, F. Wa
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APPENDIX A: LabVIEW PROGRAM FOR PEA
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APPENDIX B: TDMAH MOLECULAR STRUCTU
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H 18 B19 2 A18 1 D17 H 18 B20 2 A19
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