CHEMICAL VAPOR DEPOSITION OF THIN FILM MATERIALS FOR ...

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DLI-CVD growth of lithium ferrite is investigated by using Li(acac) and Fe(acac)3 as the metal organic precursors. Different from the deposition of nickel ferrite, lithium ferrite films grown on MgAl2O4(100) are much rougher and do not show any crystalline features for deposition at 500˚C and 600˚C. Spinel crystalline phases have been found for the deposition at 700˚C and 800˚C. However, more than one orientation are present for deposition at 800˚C. Comparatively, lithium ferrite films deposited on MgO(100) exhibits single crystal quality and much smoother surface for the deposition temperature range of 500˚C to 800˚C. The smaller lattice mismatch between MgO and Nickel ferrite can be the principal reason. The narrowest in plane FMR line width ~368 Oe has been found for the films deposited at 600˚C. With suitable optimization of the vaporization and film deposition conditions, excellent quality ferrite films can be grown at a relatively high rate using DLI-CVD. 105
CHAPTER 5. DIRECT LIQUID INJECTION CHEMICAL VAPOR DEPOSITION OF 5.1 Introduction FERROELECTRIC BARIUM TITANATE FILMS As previously introduced, barium titanate (BaTiO3) possesses excellent properties (high dielectric constants, ferroelectric, optoelectronic, etc.,) for application in certain advanced electronic devices, and great efforts have been dedicated to the deposition of high quality single crystal barium titanate thin films in the past decades.[113-115] Among these studies, chemical vapor deposition is uniquely preferred due to its capability of large area and conformal deposition. One challenge for CVD growth of barium titanate thin film is the availability of volatile and thermally stable barium precursor. The use of metal organic β-diketonate barium precursor Ba(thd)2 {bis(2,2,6,6-tetramethyl-3,5-heptanedionato) barium (II)} has been widely studied in CVD method, but the high temperature (~250˚C) needed to vaporize the solid precursor would result in precursor degradation (sintering effect) and thus affect run to run repeatability.[135,138,139] Besides, the precise control of rate of introduction of barium precursor into the reaction chamber is almost impossible. In this chapter, DLICVD technique as used in the deposition of nickel ferrite is used for deposition of barium titanate films. For this technique, by dissolving metal organic precursors into an appropriate solvent, few advantages can be achieved over direct vaporization of the solid phase precursors. For example, low vaporization temperature, accurate control of liquid flow rate, and minimization of precursor oligomerization effect, etc.. In our work, Ba(hfa)2•tetraglyme {Ba(C5HF6O2)•(C10H22O5)} and Ti(thd)2(OPr i )2 {Ti(C11H19O2)2(C3H7O)2} are dissolved in toluene as the precursor source. The 106
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CHEMICAL VAPOR DEPOSITION OF THIN F
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ABSTRACT Chemical vapor deposition
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DEDICATION This dissertation is ded
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φ In-plane tilt angle of X-ray dif
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ACKNOWLEDGMENTS It is my pleasure t
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CONTENTS ABSTRACT .................
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3.2.1 Introduction ................
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LIST OF TABLES Table 1. Hafnium ami
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indicated by the complex FMR curve.
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Fig. 49. Ferromagnetic resonance cu
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growth rate, good step coverage and
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growth of thin film oxides due to t
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one can uniformly deliver precursor
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for the next reaction step as shown
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Fig. 3. Schematic of a typical dire
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is predominantly dependent on syste
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J r J A -D n b-n 0 δ n or for the
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surface passivation with certain in
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ay spectroscopy (EDS), Wavelength d
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incidence angle is larger than cert
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epresenting those characteristic ph
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1.2.3.3 X-ray Diffraction (XRD) X-r
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exhibit diffraction peaks in the no
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(nanometers to tens of nanometers),
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strongest absorption of microwave s
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pinch-off to indicate the lack of a
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coupling is from unbound ferrite-fe
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diffusion barrier material in micro
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Fig. 14. A cross sectional scanning
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In spite of the same spinel structu
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ferrites has been investigated exte
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systems is showed in Fig.18.[83] As
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precursor vaporization process, e.g
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CHAPTER 3. PLASMA ENHANCED ATOMIC L
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the initial surface chemistry for t
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delay time of 2 seconds between spe
Page 73 and 74: Kcal/mol respectively. The stronger
Page 75 and 76: negative slope) behavior in the pum
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Page 79 and 80: decomposition products (Hf-H) and g
Page 81 and 82: dried by ultra high purity N2 gas.
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Page 85 and 86: Hf and N elements, incorporation of
Page 87 and 88: [150,151] This is a unique feature
Page 89 and 90: software. The thickness results are
Page 91 and 92: CHAPTER 4. DIRECT LIQUID INJECTION
Page 93 and 94: film growth region. The properties
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Page 97 and 98: size). For the rocking curve analys
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Page 103 and 104: Fig. 40. Cross-sectional view by fi
Page 105 and 106: the MgAl2O4 substrate confirms cube
Page 107 and 108: pattern. Fig.44(b) has diffraction
Page 109 and 110: We have used an AGM (Alternating Gr
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Page 113 and 114: deposited at 600˚C is the lowest.
Page 115 and 116: wave states degenerate with the FMR
Page 117 and 118: Fig. 53. ϕ-scan of nickel ferrite
Page 119 and 120: Surface roughness characterized by
Page 121 and 122: Fig. 56. X-ray diffraction θ-2θ c
Page 123: 4.4 Conclusion In summary, we have
Page 127 and 128: eaction zone of the tube furnace is
Page 129 and 130: Fig. 58. X-ray diffraction characte
Page 131 and 132: interface. This phenomenon probably
Page 133 and 134: 6.1 Conclusion CHAPTER 6. CONCLUSIO
Page 135 and 136: the temperature range of 600˚C to
Page 137 and 138: such as PMN-PT and PZN-PT. CVD proc
Page 139 and 140: [18]. L. S.-J. Peng, X. X. Xi, B. H
Page 141 and 142: [54]. B. O. Johansson, J. -E. Sundg
Page 143 and 144: [96]. J. D. Adam, S. V. Krishnaswam
Page 145 and 146: [136]. J. Zhao, V. Fuflyigin, F. Wa
Page 147 and 148: APPENDIX A: LabVIEW PROGRAM FOR PEA
Page 149 and 150: APPENDIX B: TDMAH MOLECULAR STRUCTU
Page 151 and 152: H 18 B19 2 A18 1 D17 H 18 B20 2 A19
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