CHEMICAL VAPOR DEPOSITION OF THIN FILM MATERIALS FOR ...

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Fig. 31. LabVIEW program for the control of PEALD process. Fig. 32. Synchronized reactants and plasma pulsing sequence in PEALD experiments. The reaction chamber is coated with Si3N4 (PECVD using He diluted SiH4 and N2 plasma) to minimize the effect of out gassing. The base pressure of the reaction chamber is pumped to around 5×10 -8 torr by a turbo molecular pump (Pfeiffer). In the deposition process, the chamber is pumped by a rotary vane vacuum pump (Leybold) and the system pressure is automatically controlled by a MKS throttle valve. The as deposited thin films were characterized by an in vacuo XPS system (APEX, Physical Electronics Inc.), which was connected to the deposition chamber through a gate valve, as showed in Fig.30. The vacuum pressure of sample transfer path is below 10 -7 torr. The 63
pressure for XPS analysis is around 5×10 -9 torr. The as used X-ray is Mg Kα (1253.6 eV) with a power of 100W (15kV). The sample analysis area is 6×6 mm 2 . The pass energy of the electron spectrometer is set to 100 eV for survey spectra and 25 eV for high resolution spectra. Depth profile analysis was also carried out in this XPS system by using a 5kV Ar + ion gun and the etching area was set to the same as the analysis area. A nominal etching rate of 1 nm/min is achieved under our experimental conditions. The thin film cross section were characterized by field emission scanning electron microscopy (JEOL 7000) and transmission electron microscopy (TECNAI F20). The FESEM was operated at accelerating voltage of 20 kV with a spot size of 8 and working distance of 10 mm. High resolution TEM picture of the thin film interface was taken under field emission gun voltage of 200 kV. Zone axis of [100] was taken for the single crystal Si substrate. Thin film surface topography was studied by atomic force microscopy (Nanoscope IV, Digital Instruments). The AFM was operated in tapping mode using AFM tips of NSC15/AIBS (MikroMasch) with tip radius of curvature of around ~10 nm, force constant of ~40 N/m and resonance frequency of ~325 kHz. Crystallographic information was studied by X- ray diffractometer (X’pert, Philips) and thin film thickness by X-ray reflectivity. The thin film sheet resistance was measured by a four point probe. 3.3.3 Results and Discussion Incorporation of oxygen has been found in the PEALD deposited thin films in spite of the low system base pressure (~10 -8 torr), chamber wall coating with Si3N4 and the pre-sputtering of substrate with hydrogen plasma. Considering the small air contamination effect for an in-vacuo XPS analysis, the oxygen has been attributed to the residual oxidants (H2O/O2) in the deposition ambient which can react with TDMAH and be buried into the film. One factor has been found to affect the degree of oxygen incorporation is the inert gas purging time after TDMAH pulse. By 64
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CHEMICAL VAPOR DEPOSITION OF THIN F
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ABSTRACT Chemical vapor deposition
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DEDICATION This dissertation is ded
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φ In-plane tilt angle of X-ray dif
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ACKNOWLEDGMENTS It is my pleasure t
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CONTENTS ABSTRACT .................
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3.2.1 Introduction ................
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LIST OF TABLES Table 1. Hafnium ami
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indicated by the complex FMR curve.
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Fig. 49. Ferromagnetic resonance cu
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growth rate, good step coverage and
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growth of thin film oxides due to t
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one can uniformly deliver precursor
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for the next reaction step as shown
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Fig. 3. Schematic of a typical dire
Page 31 and 32: is predominantly dependent on syste
Page 33 and 34: J r J A -D n b-n 0 δ n or for the
Page 35 and 36: surface passivation with certain in
Page 37 and 38: ay spectroscopy (EDS), Wavelength d
Page 39 and 40: incidence angle is larger than cert
Page 41 and 42: epresenting those characteristic ph
Page 43 and 44: 1.2.3.3 X-ray Diffraction (XRD) X-r
Page 45 and 46: exhibit diffraction peaks in the no
Page 47 and 48: (nanometers to tens of nanometers),
Page 49 and 50: strongest absorption of microwave s
Page 51 and 52: pinch-off to indicate the lack of a
Page 53 and 54: coupling is from unbound ferrite-fe
Page 55 and 56: diffusion barrier material in micro
Page 57 and 58: Fig. 14. A cross sectional scanning
Page 59 and 60: In spite of the same spinel structu
Page 61 and 62: ferrites has been investigated exte
Page 63 and 64: systems is showed in Fig.18.[83] As
Page 65 and 66: precursor vaporization process, e.g
Page 67 and 68: CHAPTER 3. PLASMA ENHANCED ATOMIC L
Page 69 and 70: the initial surface chemistry for t
Page 71 and 72: delay time of 2 seconds between spe
Page 73 and 74: Kcal/mol respectively. The stronger
Page 75 and 76: negative slope) behavior in the pum
Page 77 and 78: the existence of both physisorbed a
Page 79 and 80: decomposition products (Hf-H) and g
Page 81: dried by ultra high purity N2 gas.
Page 85 and 86: Hf and N elements, incorporation of
Page 87 and 88: [150,151] This is a unique feature
Page 89 and 90: software. The thickness results are
Page 91 and 92: CHAPTER 4. DIRECT LIQUID INJECTION
Page 93 and 94: film growth region. The properties
Page 95 and 96: solution was accurately controlled
Page 97 and 98: size). For the rocking curve analys
Page 99 and 100: oxygen does not participate in the
Page 101 and 102: ecause vapor velocity cannot be cha
Page 103 and 104: Fig. 40. Cross-sectional view by fi
Page 105 and 106: the MgAl2O4 substrate confirms cube
Page 107 and 108: pattern. Fig.44(b) has diffraction
Page 109 and 110: We have used an AGM (Alternating Gr
Page 111 and 112: as derived equations for different
Page 113 and 114: deposited at 600˚C is the lowest.
Page 115 and 116: wave states degenerate with the FMR
Page 117 and 118: Fig. 53. ϕ-scan of nickel ferrite
Page 119 and 120: Surface roughness characterized by
Page 121 and 122: Fig. 56. X-ray diffraction θ-2θ c
Page 123 and 124: 4.4 Conclusion In summary, we have
Page 125 and 126: CHAPTER 5. DIRECT LIQUID INJECTION
Page 127 and 128: eaction zone of the tube furnace is
Page 129 and 130: Fig. 58. X-ray diffraction characte
Page 131 and 132: interface. This phenomenon probably
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6.1 Conclusion CHAPTER 6. CONCLUSIO
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the temperature range of 600˚C to
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such as PMN-PT and PZN-PT. CVD proc
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[18]. L. S.-J. Peng, X. X. Xi, B. H
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[54]. B. O. Johansson, J. -E. Sundg
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[96]. J. D. Adam, S. V. Krishnaswam
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[136]. J. Zhao, V. Fuflyigin, F. Wa
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APPENDIX A: LabVIEW PROGRAM FOR PEA
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APPENDIX B: TDMAH MOLECULAR STRUCTU
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H 18 B19 2 A18 1 D17 H 18 B20 2 A19
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