CHEMICAL VAPOR DEPOSITION OF THIN FILM MATERIALS FOR ...

size). For the rocking curve analysis, 2θ was fixed at the NiFe2O4 (400) diffraction angle while
scanning ω. The Raman spectra of NiFe2O4 single crystal and NiFe2O4/MAO films were
measured under nominally identical conditions using a T64000 (Jobin Yvon) spectrometer
equipped with a microscope and a liquid nitrogen cooled CCD detector. The 633 nm laser line of
a He-Ne laser was used for excitation. The magnetic properties were studied using an AGM
(PMC, Micromag-2900) system with a magnetic field scan to 16 kOe. The four edges and
backside of each sample were polished by sandpaper before the AGM measurements.
4.2.2 Results and Discussion
4.2.2.1 Thin Film Growth on MgAl2O4 (100) and MgO (100)
4.2.2.1.1 Oxygen Effect on Film Morphology
Fig. 39. The effect of oxygen flow rate on thin film surface morphology observed using field emission scanning
electron microscopy. (a) Without oxygen flow, film of porous structure is formed; (b) particulates formation under
high oxygen flow rate.
Unlike typical CVD reactions where metal-organic precursors are the only reactant
species, DLI-CVD involves the combustion of a large concentration of organic solvent vapor. In
our case, the consumption of oxygen by DMF (flash point 58˚C) has to be considered. To
investigate the effect of oxygen flow on the thin film growth, we carried out two control
78