Films minces à base de Si nanostructuré pour des cellules ...

(a) Brewster incidence.
(b) Normal incidence.
Figure 4.36: FTIR spectra of as-grown SRSO/SRSN MLs grown by reactive approach
as a function of SRSN sublayer thickness.
tel-00916300, version 1 - 10 Dec 2013
in the Si-N peak intensities with respect to those of Si-O ones (peak positions are
marked in the upper axis of Fig. 4.36). Similar trend is observed for SRSO/SRSN
MLs with SRSN grown by the co-sputtering method on varying the sublayer thicknesses.
The eect on the emission behaviour of STA SRSO/SRSN by varying t SRSN is
shown in gure 4.37.
t SRSN
peak
(a)
(eV)
peak
(b)
(eV)
peak
(c) (eV)
1.5 nm 1.25 - -
3 nm 1.21 1.48 1.72
5 nm 1.24 1.44 1.63
8 nm 1.43 1.59 1.85
10 nm 1.45 1.59 1.85
Figure 4.37: PL spectra and the peak positions of STA (1min-1000°C) SRSO/SRSN
ML with varying t SRSN grown by reactive sputtering approach. Table indicates the peak
positions obtained after gaussian curve tting on each of the PL spectra.
The PL intensity shows a non monotonous trend with increasing SRSN sublayer
thickness. The intensity increases with increasing t SRSN , reaching the highest at 8
nm and decreases for t SRSN =10 nm. The table reports the values of the three peak
maxima in all the samples under investigation. The results of gaussian curve tting
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