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5.4 Discussion on the choice of input parameters<br />

5.4.1 Absorption and Emission cross-sections<br />

tel-00916300, version 1 - 10 Dec 2013<br />

We assume that the largest contribution towards emission in our SRSO/<strong>Si</strong>O 2 and<br />

SRSO/SRSN MLs is from <strong>Si</strong>-np. <strong>Si</strong>nce no <strong>Si</strong>-np were observed in SRSN, the SRSO<br />

layer is consi<strong>de</strong>red to be primarily responsible for emission. It has been reported<br />

that the absorption cross-section of <strong>Si</strong>-np usually ranges between 10 −22 - 10 −18 m 2<br />

[Khriachtchev 02, Daldosso 06, Pavesi 00, Huda 09, Garcia 03]. From these literature<br />

values, we may assume our SRSO layers to have σ abs in the above mentioned<br />

range.<br />

The absorption intensity <strong>de</strong>pends on the population of emitters in the ground<br />

state. Therefore, the ground state population N 1 is xed at 10 26 emitters/m 3 relating<br />

to the highest possible <strong>de</strong>nsity of <strong>Si</strong>-np attainable in our SRSO layers. We keep the<br />

<strong>de</strong>gree of freedom on emission cross-sections and do not link it with σ abs.max during<br />

these simulations. Various simulations were ma<strong>de</strong> and as illustrated in gure 5.14,<br />

it was observed that a higher emission cross-section is nee<strong>de</strong>d to obtain gain with<br />

our chosen σ abs values and to witness emission peak in the mo<strong>de</strong>led curves.<br />

5.4.2 Lifetime of <strong>Si</strong>-np in dierent MLs<br />

The lifetime of band to band recombinations of electron-hole pairs in <strong>Si</strong>-np is reported<br />

to be 10-100 µs [Wilson 93, Littau 93]. In or<strong>de</strong>r to have an estimate of<br />

carrier lifetime in our MLs, PL lifetime measurements 2 were ma<strong>de</strong> on SRSO/<strong>Si</strong>O 2<br />

and SRSO/SRSN MLs after CA and STA treatments respectively since these annealing<br />

treatments resulted in the highest emission intensity as <strong>de</strong>monstrated in<br />

chapters 3 and 4.<br />

Consi<strong>de</strong>ring the emission peak around 830 nm (∼ 1.5 eV) in CA SRSO/<strong>Si</strong>O 2 ,<br />

lifetime measurements were done by using this as the <strong>de</strong>tection wavelength. Decay<br />

time was estimated to be 88 µs by tting the experimentally obtained <strong>de</strong>cay curve<br />

with a single exponential <strong>de</strong>cay law.<br />

It was discussed in chapter 4 that the PL spectra of SRSO/SRSN MLs mostly<br />

possess three peaks. The sample chosen for investigations had three emission peaks<br />

centered around 675 nm (∼ 1.83 eV), 800 nm (∼ 1.55 eV) and 900 nm (∼ 1.37<br />

eV). The <strong>de</strong>cay time <strong>de</strong>tected at each of these wavelengths were estimated to be 51<br />

µs, 56 µs and 51 µs respectively by tting the experimental and theoretical curves.<br />

These measurements give an estimate of the carrier lifetime, that well suits with<br />

2 Lifetime measurements were by Dr. J. Cardin and Prof. Christophe Labbé of our NIMPH<br />

team at CIMAP.<br />

153

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