Films minces à base de Si nanostructuré pour des cellules ...

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[Ginley 08] D. Ginley, M. A. Green & R. Collins. Harnessing materials for energy, solar energy conversion toward 1 terawatt. MRS Bulletin,Materials Research Society, 2008. [Gnutzmann 74] U. Gnutzmann & K. Clausecker. Appl. Phys., vol. 3, page 9, 1974. [Goetberger 02] A. Goetberger, J. Luther & G. Willeke. Solar Energy Materials and Solar Cells, vol. 74, pages 111, 2002. [Gourbilleau 00] F. Gourbilleau, P. Voivenel, X. Portier & R. Rizk. Microelectronics Reliability, vol. 40, pages 889892, 2000. tel-00916300, version 1 - 10 Dec 2013 [Gourbilleau 01] F. Gourbilleau, X. portier, C. Ternon, P. Voivenel, R. Madelon & R. Rizk. Appl.Phys.Lett., vol. 78, page 3058, 2001. [Gourbilleau 09] F. Gourbilleau, C. Ternon, D. Maestre, O. Palais & C. Dufour. J.Appl.Phys, vol. 106, page 013501, 2009. [Green 93] M. A. Green. Semicond. Sci. Technol., vol. 8, pages 112, 1993. [Green 01a] M. A. Green. Prog. Photovoltaics. Res. Appl., vol. 9, page 49, 2001. [Green 01b] M. A. Green. Prog. Photovoltaics, vol. 9(2), page 123, 2001. [Green 01c] M.A. Green. Third generation photovoltaics. Bridge Printery, Sydney, 2001. [Green 02] M. A. Green & 2002 A.S. Brown. J. Appl. Phys., vol. 92, page 1326, 2002. [Green 05] M. A. Green, E. C. Cho, Y. H. Cho, E. Pink, T. Trupke, K. L. Lin, T. Fangsuwannarak, T. Puzzer, G. Conibeer & R. Corkish. Proceeding of 20th European Photovoltaic Solar Energy Conference, Barcelona, Spain (June), page 3, 2005. [Green 06] M. A. Green, G. Conibeer, D. Konig, E.C. Cho, D. Song, Y. Cho, T. Fangsuwannarak, Y. Huang, C.Jiang, T. Trupke, R. Corkish & T. Puzzer. 21st European Photovoltaic Solar Energy Conference, Dresden (September), 2006. 176
[Gritsenko 99] V. A. Gritsenko, K. S. Zhuravlev, A. D. Milov, H. Wong, R. W. M. Kwok & J. B. Xu. Thin Solid Films, vol. 353, page 20, 1999. [Guha 99] S. Guha & J. Yang. IEEE Transactions on Electron devices, vol. 46, pages 20802085, 1999. [Guha 02] S. Guha & J. Yang. Proceedings of the 29th IEEE PVSEC, New Orleans, pages 10701075, 2002. [Hanna 06] M. C. Hanna & A. J. Nozik. J. Appl. Phys., vol. 100, page 074510, 2006. [Hasegawa 93] S. Hasegawa, L. He, Y. Amano & T. Inokuma. Phys. Rev. B, vol. 48, page 5315, 1993. tel-00916300, version 1 - 10 Dec 2013 [Hegedus 97] Steven. S. Hegedus. Prog. Photovolt: Res. Appl., vol. 5, pages 151168, 1997. [Hijazi 09a] K. Hijazi, L. Khomenkova, J. Cardin, F. Gourbilleau & R. Rizk. Physica E, vol. 41, page 1067, 2009. [Hijazi 09b] Khalil Hijazi. Contribution a l'optimisation du couplage Erbium-nanograins de silicium pour des dispositifs photoniques compacts. PhD thesis, Universite de caen/Basse- Normandie, 2009. [Holm 82] R. T. Holm, S. W. McKnight, e. D. palik & W. Lukosz. Applied Optics, vol. 21, page 2512, 1982. [Hong 10] S. H. Hong, J. H. Park, D. H. Shin, C. O. Kim, S.-H Choi & K. J. Kim. Appl Phys Lett, vol. 97, page 072108, 2010. [Hong 11] S. H. Hong, Y. S. Kim, W. L., Y. H. Kim, J. Y. Song, J. S. Jang, J. H. Park, S.-H Choi & K. J. Kim. Nanotechnology, vol. 22, page 425203, 2011. [Huang 97] L. Huang, K. W. Hipps, J. T. Dickinson, U. Mazur & X. D. Wang. Thin Solid Films, vol. 299, page 104, 1997. [Huda 09] M. Q. Huda, S. Saha, M. S. Akter, M. T. Hasan, S. Subrina & F. M. Mohammedy. 4th International Conference on Computers and Devices for Communication, CODEC 2009., pages 14, 2009. 177
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UNIVERSITÉ de CAEN BASSE-NORMANDIE
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tel-00916300, version 1 - 10 Dec 20
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2.1.1 Radiofrequency Magnetron Reac
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3.21 Inuence of sublayer thicknesse
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Introduction State of the art tel-0
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as the thickness of the lm, the pat
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Chapter 1 Role of Silicon in Photov
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mono-, poly- and amorphous silicon,
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Figure 1.3: A typical solar cell ar
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occurance of this three body event
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tel-00916300, version 1 - 10 Dec 20
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Shockley-Queisser limit of 31% [Sho
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Figure 1.12: materials. Energy diag
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Background of this thesis: A new me
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Chapter 2 Experimental techniques a
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maximum power into the plasma. (a)
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Figure 2.2: Illustration of sample
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Ray Diraction, X-Ray Reectivity, El
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(a) Normal Incidence. (b) Oblique (
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to equation 2.4, when X-ray beam st
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investigation. This value is obtain
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e seen that large θ (here, θ is u
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Figure 2.12: Raman spectrometer-Sch
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Experimental set-up and working tel
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ˆ The presence of Si from SiO 2 or
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2.2.7 Spectroscopic Ellipsometry Pr
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k(E) = f j(ω − ω g ) 2 (ω −
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tel-00916300, version 1 - 10 Dec 20
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Figure 2.20: Schematic diagram of t
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Chapter 3 A study on RF sputtered S
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(a) Deposition rate. (b) Refractive
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Thus, by knowing the refractive ind
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tel-00916300, version 1 - 10 Dec 20
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P Ar (mTorr) P H2 (mTorr) r H (%) 1
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such a peak was witnessed in [Quiro
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the host SiO 2 matrix leading to an
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initiated in this thesis, for the g
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P Si (W/cm 2 ) x = 0/Si Bruggemann
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tel-00916300, version 1 - 10 Dec 20
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Figure 3.15: Absorption coecient cu
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Aim of the study To see the inuence
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tel-00916300, version 1 - 10 Dec 20
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It can be seen that there is a sign
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tel-00916300, version 1 - 10 Dec 20
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3.8.4 Inuence of SiO 2 barrier thic
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Chapter 4 A study on RF sputtered S
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4.2.2 Structural analysis (a) Fouri
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(a) FTIR spectra of NRSN, Si 3 N 4
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tel-00916300, version 1 - 10 Dec 20
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Figure 4.15: Absorption coecient sp
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A multilayer composed of 100 patter
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multilayered conguration. Therefore
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around 1250 cm −1 . The blueshift
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tion but within a dierence of one o
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sample peak 1 (eV) peak 2 (eV) peak
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(a) 1min annealing vs. T A . (b) 1h
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tel-00916300, version 1 - 10 Dec 20
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(a) Brewster incidence. (b) Normal
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Page 157 and 158: As seen from gure 5.1, a part of th
Page 159 and 160: function of wavelength consists of
Page 163 and 164: In the case of our multilayers, the
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Page 167 and 168: dN 3 dt = N 2 τ 23 − (σ em. φ
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Page 177 and 178: (a) σ emis.max. = 8.78 x 10 −18
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Page 181 and 182: (a) Integrated population of excite
Page 183 and 184: two kinds of emitters in SRSO subla
Page 185 and 186: Conclusion and future perspectives
Page 187 and 188: 4. Investigating the origin of phot
Page 189 and 190: Bibliography [Abeles 83] B. Abeles
Page 191 and 192: [Carlson 76] D. E. Carlson & C. R.
Page 193: [Di 10] D. Di, I. Perez-Wur, G. Con
Page 197 and 198: [Kaiser 56] W. Kaiser, P. H. Kech &
Page 199 and 200: [Mandelkorn 62] J. Mandelkorn, C. M
Page 201 and 202: [Pavesi 00] L. Pavesi, L. D. Negro,
Page 203 and 204: [Sopori 96] B. L. Sopori, X. Deng,
Page 205 and 206: [Weng 93] Y. M. Weng, Zh. N. fan &
Page 207 and 208: and the tangential components of th
Page 209 and 210: Appendix II Trials σ em.max (x10
Page 211: Résumé tel-00916300, version 1 -
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