Films minces à base de Si nanostructuré pour des cellules ...

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[Lehmann 83] A. Lehmann, L. Shuhmann & K. Huebner. Phys. Stat. Sol. B, vol. 117, page 689, 1983. [Lelievre 07] J. F. Lelievre, H. Rodriguez, E. Fourmond, S. Quoizola, J. De la Torre, A. Sibai, G. Bremond, P.J. Reberryorn, J. C. Loretz, D. Aroujo & M. Leviti. Phys. Stat. Solidi. C, vol. 4, page 427, 2007. [Lim 08] K. S. Lim & O. Shevaleevskiy. Pure Appl. Chem, vol. 80, page 2141, 2008. [Lin 92] K. C. Lin & S. C. Lee. J. Appl. Phys., vol. 72, page 5474, 1992. tel-00916300, version 1 - 10 Dec 2013 [Lin 00] C. F. Lin, W. T. Teseng & M. S. Feng. J. Appl. Phys., vol. 87, page 2808, 2000. [Lin 02] S. Y. Lin. J. Optoelect. Adv. Materials, vol. 4, page 543, 2002. [Littau 93] K. A. Littau, P. J. Szajowski, A. J. Muller, A. R. kortan & L. E. Brus. J. Phys. Chem., vol. 97, page 1224, 1993. [Lopez 11] J. Carrillo Lopez, J. A. Luna Lopez, I. Vivaldo de la Cruz, M. Aceves-Mijares, A. Morales-Sanchez & G. Garcia- Salgado. Sol. Energy. Mat. Sol. Cell ( Article in press), vol. doi:10.1016/j.solmat.2011.04.029, 2011. [Lucovsky 83] G. Lucovsky, J. Yang, S. S. Chao, J. E. Tyler & W. Czubatyj. Phys Rev. B, vol. 28, page 3234, 1983. [Lucovsky 87] G. Lucovsky, M. J. Mantini, J. K. Srivastava & E. A. Irene. J. Vac. Sci. Technol., vol. B5, page 530, 1987. [Luque 97] A. Luque & 1997 A. Marti. Phys.Rev.Lett, vol. 78, pages 50145017, 1997. [Luque 05] A. Luque, A. Marti, N. Lopez, E.Antolin, E. Canovas, C. Stanley, C. Farmer, L. J., L. Cuadra & J. L. Balenzategui. Appl Phys Lett, vol. 87, page 083505, 2005. [Maestre 10] D. Maestre, O. Palais, D. Barakel, M. Pasquinelli, C. Alfonso, F. Gourbilleau, M. De Laurentis & A. Irace. J.Appl.Phys, vol. 107, page 064321, 2010. 180
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UNIVERSITÉ de CAEN BASSE-NORMANDIE
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tel-00916300, version 1 - 10 Dec 20
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2.1.1 Radiofrequency Magnetron Reac
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3.21 Inuence of sublayer thicknesse
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Introduction State of the art tel-0
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as the thickness of the lm, the pat
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Chapter 1 Role of Silicon in Photov
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mono-, poly- and amorphous silicon,
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Figure 1.3: A typical solar cell ar
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occurance of this three body event
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tel-00916300, version 1 - 10 Dec 20
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Shockley-Queisser limit of 31% [Sho
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Figure 1.12: materials. Energy diag
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Background of this thesis: A new me
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Chapter 2 Experimental techniques a
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maximum power into the plasma. (a)
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Figure 2.2: Illustration of sample
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Ray Diraction, X-Ray Reectivity, El
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(a) Normal Incidence. (b) Oblique (
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to equation 2.4, when X-ray beam st
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investigation. This value is obtain
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e seen that large θ (here, θ is u
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Figure 2.12: Raman spectrometer-Sch
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Experimental set-up and working tel
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ˆ The presence of Si from SiO 2 or
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2.2.7 Spectroscopic Ellipsometry Pr
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k(E) = f j(ω − ω g ) 2 (ω −
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tel-00916300, version 1 - 10 Dec 20
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Figure 2.20: Schematic diagram of t
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Chapter 3 A study on RF sputtered S
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(a) Deposition rate. (b) Refractive
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Thus, by knowing the refractive ind
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tel-00916300, version 1 - 10 Dec 20
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P Ar (mTorr) P H2 (mTorr) r H (%) 1
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such a peak was witnessed in [Quiro
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the host SiO 2 matrix leading to an
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initiated in this thesis, for the g
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P Si (W/cm 2 ) x = 0/Si Bruggemann
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tel-00916300, version 1 - 10 Dec 20
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Figure 3.15: Absorption coecient cu
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Aim of the study To see the inuence
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It can be seen that there is a sign
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3.8.4 Inuence of SiO 2 barrier thic
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Chapter 4 A study on RF sputtered S
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4.2.2 Structural analysis (a) Fouri
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(a) FTIR spectra of NRSN, Si 3 N 4
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tel-00916300, version 1 - 10 Dec 20
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Figure 4.15: Absorption coecient sp
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A multilayer composed of 100 patter
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multilayered conguration. Therefore
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around 1250 cm −1 . The blueshift
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tion but within a dierence of one o
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sample peak 1 (eV) peak 2 (eV) peak
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(a) 1min annealing vs. T A . (b) 1h
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tel-00916300, version 1 - 10 Dec 20
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(a) Brewster incidence. (b) Normal
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increases for the 50 patterned samp
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Page 157 and 158: As seen from gure 5.1, a part of th
Page 159 and 160: function of wavelength consists of
Page 163 and 164: In the case of our multilayers, the
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Page 167 and 168: dN 3 dt = N 2 τ 23 − (σ em. φ
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Page 171 and 172: 5.4 Discussion on the choice of inp
Page 173 and 174: tting operations show the presence
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Page 177 and 178: (a) σ emis.max. = 8.78 x 10 −18
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Page 181 and 182: (a) Integrated population of excite
Page 183 and 184: two kinds of emitters in SRSO subla
Page 185 and 186: Conclusion and future perspectives
Page 187 and 188: 4. Investigating the origin of phot
Page 189 and 190: Bibliography [Abeles 83] B. Abeles
Page 191 and 192: [Carlson 76] D. E. Carlson & C. R.
Page 193 and 194: [Di 10] D. Di, I. Perez-Wur, G. Con
Page 195 and 196: [Gritsenko 99] V. A. Gritsenko, K.
Page 197: [Kaiser 56] W. Kaiser, P. H. Kech &
Page 201 and 202: [Pavesi 00] L. Pavesi, L. D. Negro,
Page 203 and 204: [Sopori 96] B. L. Sopori, X. Deng,
Page 205 and 206: [Weng 93] Y. M. Weng, Zh. N. fan &
Page 207 and 208: and the tangential components of th
Page 209 and 210: Appendix II Trials σ em.max (x10
Page 211: Résumé tel-00916300, version 1 -
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