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Films minces à base de Si nanostructuré pour des cellules ...

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u + = S + e −ik 2(d−x e)<br />

and u − = S − e −ik 2x e<br />

Eqn (5.22)<br />

If there are N emitters placed at various positions x i (i = 1 to N ), then the<br />

elds at the two ends of medium 2 becomes,<br />

u + = ∑ N<br />

i=1 S i(x i )e −ik 2(d−x i) at x = d − Eqn (5.23)<br />

u − = ∑ N<br />

i=1 S i(x i )e −ik 2x e at x = 0<br />

+<br />

Eqn (5.24)<br />

In or<strong>de</strong>r to calculate the emission intensity of N emitters, the population rate<br />

equations have to be known and are <strong>de</strong>ned in the next section.<br />

5.3.2 Population rate equations<br />

tel-00916300, version 1 - 10 Dec 2013<br />

In or<strong>de</strong>r to estimate the population <strong>de</strong>nsity, the absorption and emission mechanisms<br />

are <strong>de</strong>scribed by a four level system. This system as illustrated in gure 5.10 is chosen<br />

in or<strong>de</strong>r to relate to a <strong>Si</strong>-np system and to account for the dierence in energy levels<br />

between the absorption and emission.<br />

Figure 5.10: Four level system for mo<strong>de</strong>ling absorption and emission.<br />

We assume the absorption of the inci<strong>de</strong>nt photons (from laser) between energy<br />

levels 1 to 2, fast non-radiative transition in level 2 to 3, reaching of a stationary<br />

regime in level 3 where it stays for a time that <strong>de</strong>nes the lifetime of the carriers, and<br />

nally <strong>de</strong>excitation to level 1 either by spontaneous or stimulated emission. If N − i<br />

and N + i represent the population <strong>de</strong>nsity of level i at time t and t + ∆t respectively,<br />

the rate equations of each of the levels using the nite dierent method can be<br />

written as follows:<br />

dN 1<br />

dt = −σ abs.φN 1 + N 4<br />

τ 41<br />

Eqn (5.25)<br />

dN 2<br />

dt = −N 2<br />

τ 23<br />

+ σ abs. φN 1 Eqn (5.26)<br />

148

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