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tel-00916300, version 1 - 10 Dec 2013 136
Chapter 5 Photoluminescence emission modeling in Si-based thin lms tel-00916300, version 1 - 10 Dec 2013 5.1 Introduction The emission properties of Si-based thin lms can be tuned by playing with various factors such as refractive index, total thickness, sublayer thickness, type of emitters, concentration of emitters etc., as demonstrated in chapters 3 and 4. The results of the previous chapters suggested that there might be several kinds of emitters in the thin lm that contribute to the position, intensity and shape of emission peaks. A thin lm is assumed to be a multi-wave interferometer such as the plane parallel plate, of thickness d and a refractive index ñ. Therefore, the reection and transmission coecients at the air-lm and lm-subtrate interfaces, and the phaseshift due to the optical path within the thin lm may lead to the interference eects in PL. Such eects were observed in cathodoluminescence studies of SiO 2 thin lm on Si substrate and investigated as early as 1970s and 1980s [Mitchell 73, Holm 82]. It has been pointed out that oxide lms thicker than 200 nm exhibit interference eects [Nesheva 02]. Besides, it has also been reported in SRSO lms that thickness, refractive index, interface states, along with other experimental setup parameters such as angle of the incident pump, its power density etc., also play a role in the photoluminescence spectra [Ternon 04b, Ferre 05]. Therefore, in this chapter emission modeling will be performed accounting for the following parameters that are broadly classied into two parts: 1. Incident pump: wavelength, amplitude, angle of incidence. 2. Emission: thin lm thickness, refractive index, population prole of emitters in the ground and excited states, distribution of emitters in single layers and 137
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UNIVERSITÉ de CAEN BASSE-NORMANDIE
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tel-00916300, version 1 - 10 Dec 20
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2.1.1 Radiofrequency Magnetron Reac
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3.21 Inuence of sublayer thicknesse
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Introduction State of the art tel-0
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as the thickness of the lm, the pat
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Chapter 1 Role of Silicon in Photov
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mono-, poly- and amorphous silicon,
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Figure 1.3: A typical solar cell ar
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occurance of this three body event
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tel-00916300, version 1 - 10 Dec 20
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Shockley-Queisser limit of 31% [Sho
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Figure 1.12: materials. Energy diag
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tel-00916300, version 1 - 10 Dec 20
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Background of this thesis: A new me
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Chapter 2 Experimental techniques a
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maximum power into the plasma. (a)
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Figure 2.2: Illustration of sample
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Ray Diraction, X-Ray Reectivity, El
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(a) Normal Incidence. (b) Oblique (
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to equation 2.4, when X-ray beam st
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investigation. This value is obtain
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e seen that large θ (here, θ is u
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Figure 2.12: Raman spectrometer-Sch
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Experimental set-up and working tel
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ˆ The presence of Si from SiO 2 or
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2.2.7 Spectroscopic Ellipsometry Pr
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k(E) = f j(ω − ω g ) 2 (ω −
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tel-00916300, version 1 - 10 Dec 20
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Figure 2.20: Schematic diagram of t
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Chapter 3 A study on RF sputtered S
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(a) Deposition rate. (b) Refractive
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Thus, by knowing the refractive ind
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tel-00916300, version 1 - 10 Dec 20
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P Ar (mTorr) P H2 (mTorr) r H (%) 1
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such a peak was witnessed in [Quiro
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the host SiO 2 matrix leading to an
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initiated in this thesis, for the g
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P Si (W/cm 2 ) x = 0/Si Bruggemann
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tel-00916300, version 1 - 10 Dec 20
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Figure 3.15: Absorption coecient cu
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Aim of the study To see the inuence
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tel-00916300, version 1 - 10 Dec 20
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Page 109 and 110: Chapter 4 A study on RF sputtered S
Page 111 and 112: 4.2.2 Structural analysis (a) Fouri
Page 119 and 120: (a) FTIR spectra of NRSN, Si 3 N 4
Page 123 and 124: Figure 4.15: Absorption coecient sp
Page 125 and 126: A multilayer composed of 100 patter
Page 127 and 128: multilayered conguration. Therefore
Page 129 and 130: around 1250 cm −1 . The blueshift
Page 133 and 134: tion but within a dierence of one o
Page 135 and 136: sample peak 1 (eV) peak 2 (eV) peak
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Page 145 and 146: increases for the 50 patterned samp
Page 147 and 148: - Peak (3) and (c): 1.8-1.95 eV Die
Page 149 and 150: 4.10.2 Eect of Si-np Size distribut
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Page 157 and 158: As seen from gure 5.1, a part of th
Page 159 and 160: function of wavelength consists of
Page 163 and 164: In the case of our multilayers, the
Page 165 and 166: ⎛ ⎜ ⎝ A ′ 2 B ′ 2 1 ⎞
Page 167 and 168: dN 3 dt = N 2 τ 23 − (σ em. φ
Page 169 and 170: Figure 5.12: The shapes of k(λ) an
Page 171 and 172: 5.4 Discussion on the choice of inp
Page 173 and 174: tting operations show the presence
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Page 177 and 178: (a) σ emis.max. = 8.78 x 10 −18
Page 179 and 180: (a) 50(3/1.5) (b) 50(3/3) tel-00916
Page 181 and 182: (a) Integrated population of excite
Page 183 and 184: two kinds of emitters in SRSO subla
Page 185 and 186: Conclusion and future perspectives
Page 187 and 188: 4. Investigating the origin of phot
Page 189 and 190: Bibliography [Abeles 83] B. Abeles
Page 191 and 192: [Carlson 76] D. E. Carlson & C. R.
Page 193 and 194: [Di 10] D. Di, I. Perez-Wur, G. Con
Page 195 and 196: [Gritsenko 99] V. A. Gritsenko, K.
Page 197 and 198: [Kaiser 56] W. Kaiser, P. H. Kech &
Page 199 and 200: [Mandelkorn 62] J. Mandelkorn, C. M
Page 201 and 202: [Pavesi 00] L. Pavesi, L. D. Negro,
Page 203 and 204: [Sopori 96] B. L. Sopori, X. Deng,
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[Weng 93] Y. M. Weng, Zh. N. fan &
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and the tangential components of th
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Appendix II Trials σ em.max (x10
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Résumé tel-00916300, version 1 -
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