Films minces à base de Si nanostructuré pour des cellules ...

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List of Figures tel-00916300, version 1 - 10 Dec 2013 1.1 World energy consumption-2007 Statistics [Internet 03] . . . . . . . . . 6 1.2 Consolidated representation of conversion eciencies and cost of the three generations of PV cells [Conibeer 07]. . . . . . . . . . . . . . . 7 1.3 A typical solar cell architecture [Internet 05]. . . . . . . . . . . . . . . 9 1.4 Schematic representation of photocurrent mechanism in a p-n junction. 9 1.5 Energy vs. momentum (E-k diagram) of Direct and Indirect bandgap semiconductors [Coa 05]. ILLUSTRATION: JOHN MACNEILL. . . . . . . . . . . 10 1.6 Electronic levels of a-Si:H and an illustration of few possible recombination paths [Miroslav , Boehme 10]. . . . . . . . . . . . . . . . . . 12 1.7 Sanyo's transition from traditional solar cell to HIT solar cell [Internet 06]. 13 1.8 Incident solar spectrum adapted from [Brown 09] and schematic representation of fundamental losses in a solar cell. . . . . . . . . . . . . 14 1.9 (a) The consequence of Quantum Connement Eect, and (b) the density of states of structures conned in 1D, 2D and 3D. . . . . . . . 16 1.10 (a) Compilation of optical bandgaps of silicon crystals and porous Si obtained from absorption(unlled symbols) and luminescence (lled symbols) [Delerue 99], (b) Size dependent photoluminescent spectra observed from porous Si with dierent porosities before and after exposure to air, and (c) Electronic states as a function of cluster size and surface passivation [Wolkin 99]. . . . . . . . . . . . . . . . . . . 17 1.11 Schematic representation of third generation solar cell principles. . . . 19 1.12 Energy diagram of bulk Si, Si QDs and their potential insulating barrier materials. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 1.13 Comparison of luminescence peak positions between Si QDs embedded in SiO 2 and SiN x (SRSN) matrices[Yang 04]. . . . . . . . . . . . 24 1.14 Formation of QDs with size dispersion in monolayers and with size control in multilayers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 1.15 Microstructural images of SRSO/SiO 2 superlattice showing the formation of Si-nanoparticles [Gourbilleau 09]. . . . . . . . . . . . . . . 27 v
tel-00916300, version 1 - 10 Dec 2013 2.1 Photo of the AJA Sputter chamber with glowing plasma and the diagrammatic representation of various processes during sputtering. . 32 2.2 Illustration of sample fabrication methods. . . . . . . . . . . . . . . . 33 2.3 Dierent types of molecular vibrations. . . . . . . . . . . . . . . . . . 35 2.4 (a) Schematic representation of FTIR set-up and (b) Interferogram to Fourier transformed spectra. . . . . . . . . . . . . . . . . . . . . . 36 2.5 Typical FTIR spectra of SiO 2 which is decomposed into three and ve gaussians in the normal incidence and Brewster incidence spectra respectively. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 2.6 Pictorial representation of Bragg's law. . . . . . . . . . . . . . . . . 39 2.7 XRD- Illustration of working principle and experimental set-up. . . . 39 2.8 A typical example of XRD spectrum taken from Si-based multilayer containing Si nanocrystals. . . . . . . . . . . . . . . . . . . . . . . . . 40 2.9 Schematic diagram of XRR set-up and the two modes of measurement. 42 2.10 A typical XRR spectrum obtained from SRSO/SRSN ML with a zoom of the interferences leading to total thickness determination in the inset. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 2.11 Illustration of scattering of light and Raman shift. . . . . . . . . . . 44 2.12 Raman spectrometer-Schematic representation. . . . . . . . . . . . . 45 2.13 Typical Raman spectra of the substrates used in this thesis. . . . . . 45 2.14 Schematic representation of light microscope, transmission electron microscope (TEM) and energy ltered TEM (EFTEM). . . . . . . . . 46 2.15 (a). Extraction of a silicon post using the Lift-out method. The sample has been milled with the help of a FIB in order to extract a strip of material. (b). The strip is shaped in a post and welded onto a steel needle (platinum weld). (c-e). Successive annular milling steps permit to obtain a very sharp tip which curvature radius does not exceed 50nm. (Images from M. Roussel, GPM Rouen) . . . . . . 50 2.16 Schematic diagram of principle and experimental set-up of an ellipsometer. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 2.17 Step 1 and 2 of ellipsometry modelling. . . . . . . . . . . . . . . . . 54 2.18 Step 3 and Step 4 of ellipsometry modelling. . . . . . . . . . . . . . 55 2.19 Illustration of excitation and de-excitation processes. . . . . . . . . . 56 2.20 Schematic diagram of the photoluminescence experimental set-up. . . 57 2.21 PL spectra before and after correcting to spectral response.λ excitation = 488 nm. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 vi
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investigation. This value is obtain
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e seen that large θ (here, θ is u
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Figure 2.12: Raman spectrometer-Sch
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Experimental set-up and working tel
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ˆ The presence of Si from SiO 2 or
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2.2.7 Spectroscopic Ellipsometry Pr
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k(E) = f j(ω − ω g ) 2 (ω −
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Figure 2.20: Schematic diagram of t
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Chapter 3 A study on RF sputtered S
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(a) Deposition rate. (b) Refractive
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Thus, by knowing the refractive ind
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P Ar (mTorr) P H2 (mTorr) r H (%) 1
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such a peak was witnessed in [Quiro
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the host SiO 2 matrix leading to an
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initiated in this thesis, for the g
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P Si (W/cm 2 ) x = 0/Si Bruggemann
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Figure 3.15: Absorption coecient cu
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Aim of the study To see the inuence
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It can be seen that there is a sign
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3.8.4 Inuence of SiO 2 barrier thic
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Chapter 4 A study on RF sputtered S
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4.2.2 Structural analysis (a) Fouri
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(a) FTIR spectra of NRSN, Si 3 N 4
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Figure 4.15: Absorption coecient sp
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A multilayer composed of 100 patter
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multilayered conguration. Therefore
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around 1250 cm −1 . The blueshift
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tion but within a dierence of one o
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sample peak 1 (eV) peak 2 (eV) peak
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(a) 1min annealing vs. T A . (b) 1h
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(a) Brewster incidence. (b) Normal
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increases for the 50 patterned samp
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- Peak (3) and (c): 1.8-1.95 eV Die
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4.10.2 Eect of Si-np Size distribut
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Chapter 5 Photoluminescence emissio
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As seen from gure 5.1, a part of th
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function of wavelength consists of
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In the case of our multilayers, the
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⎛ ⎜ ⎝ A ′ 2 B ′ 2 1 ⎞
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dN 3 dt = N 2 τ 23 − (σ em. φ
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Figure 5.12: The shapes of k(λ) an
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5.4 Discussion on the choice of inp
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tting operations show the presence
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(a) 270nm. (b) 300nm. tel-00916300,
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(a) σ emis.max. = 8.78 x 10 −18
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(a) 50(3/1.5) (b) 50(3/3) tel-00916
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(a) Integrated population of excite
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two kinds of emitters in SRSO subla
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Conclusion and future perspectives
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4. Investigating the origin of phot
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Bibliography [Abeles 83] B. Abeles
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[Carlson 76] D. E. Carlson & C. R.
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[Di 10] D. Di, I. Perez-Wur, G. Con
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[Gritsenko 99] V. A. Gritsenko, K.
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[Kaiser 56] W. Kaiser, P. H. Kech &
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[Mandelkorn 62] J. Mandelkorn, C. M
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[Pavesi 00] L. Pavesi, L. D. Negro,
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[Sopori 96] B. L. Sopori, X. Deng,
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[Weng 93] Y. M. Weng, Zh. N. fan &
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and the tangential components of th
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Appendix II Trials σ em.max (x10
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Résumé tel-00916300, version 1 -
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