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TMT<br />
<strong>Memory</strong> Devices Technology<br />
8 October 2010<br />
abc<br />
comprising. specialty DRAM; 3xnm migration at<br />
Hiroshima is likely to be limited in the shorter term.<br />
Rexchip – the commodity DRAM arm<br />
Over time, Rexchip will manufacture all of<br />
Elpida’s commodity DRAM. Rexchip is to convert<br />
its entire 80kwpm 300mm capacity to Elpida’s<br />
4xnm process by end-2010. As at September, 10%<br />
of wafer input was based on 4xnm, with the<br />
remaining on 65nm XS. Positively, Rexchip should<br />
have received all the tools required for full 4xnm<br />
migration by the end of this November.<br />
Elpida completed development of 3xnm DDR3<br />
(30% smaller, 40% more efficiency compared to<br />
4xnm); engineering samples should be out by<br />
December. Mass production is to start by end-2010,<br />
with production ramp next spring. Production uses<br />
existing equipment with double patterning. Once<br />
satisfactory yields are achieved, the technology will<br />
be transferred to Rexchip, which will completely<br />
migrate to 3xnm in the longer term.<br />
Wafer capacity (kwpy)<br />
4,000<br />
3,000<br />
2,000<br />
1,000<br />
-<br />
2007 2008 2009 2010f 2011f 2012f<br />
Wafer capacity (kwpy)<br />
Source: Company, HSBC estimates<br />
Production capacity, capex<br />
Elpida’s 300mm wafer capacity comprises its<br />
Hiroshima fab plus its 64%-owned Taiwanese<br />
subsidiary Rexchip Electronics. In addition to<br />
Rexchip, Elpida also outsources production to<br />
Powerchip and will start to outsource to ProMOS<br />
(PC DRAM) and Winbond (graphics DRAM).<br />
Elpida’s relationships with Taiwanese makers<br />
Elpida<br />
64%<br />
Rexchip<br />
30.84%<br />
Powerchip<br />
ProMOS<br />
Winbond<br />
Source: Company – arrows indicate outsourcing flow<br />
The relationship with Powerchip is waning as<br />
Rexchip expands. Powerchip has c130kwpm<br />
total capacity; 80kwpm is commodity DRAM,<br />
of which 30kwpm is legacy production. We<br />
expect Elpida to receive c40kwpm equivalent.<br />
We believe Powerchip is also migrating to<br />
4xnm, with one immersion tool expected by<br />
the end of this year followed by another two<br />
next year.<br />
ProMOS is to start DRAM mass production<br />
of 65nm-XS DRAM for Elpida after July<br />
2010, with 35kwpm capacity. But we believe<br />
ProMOS is currently having some yield issues,<br />
so this timeline could be delayed. We believe<br />
for Elpida, ProMOS will act purely as a<br />
foundry.<br />
Winbond started to produce graphics DRAM<br />
in late-1Q10. We believe the number of<br />
wafers it supplies is low, at c5kwpm.<br />
For FY10e (March-2011 end), Elpida expects to<br />
spend JPY115bn capex, of which 30% is<br />
earmarked for Rexchip, which will require<br />
JPY30-35bn to fully migrate its capacity to 4xnm.<br />
60% is earmarked for the Hiroshima fab to<br />
migrated half of its capacity to 4xnm. The<br />
remaining 10% is for subsidiaries to expand wafer<br />
testing and back-end fab facilities.<br />
64