ReferencesBailey, T., B. J. Choi, M. Colburn, M. Meissl, S. Shaya, J.G. Ekerdt, S.V.Sreenivasan, and C.G. Willson. 2000. Step and flash impr<strong>in</strong>t <strong>lithography</strong>:Template surface treatment and defect analysis. J. Vac. Sci. Technol. B 18(6):3572-77.Bhushan, B. Pr<strong>in</strong>ciples and Applications of Tribology. New York: John Wiley &Sons, 1999.Bhushan, B. Handbook of Micro/Nano Tribology. New York: CRC Press, 1995.Bould<strong>in</strong>, C.E., W. E. Wallace, G.W. Lynn, S.C. Roth, and W.L. Wu. 2000.Thermal expansion coefficients of low-k dielectric films from Fourier analysis ofx-ray reflectivity. J. Appl. Phys., 88(2): 691-95.Cameron, A. Basic Lubrication Theory. New York: John Wiley & Sons, 1976.Chalmers, S. United States Patent No. 6,204,922 B1 Issued: 3/2001. Rapid andaccurate th<strong>in</strong> film measurement of <strong>in</strong>dividual layers <strong>in</strong> a multi-layered orpatterned sample. Assignee: Filmetrics, Inc., San Diego, CA.Chason, E. 2000. Use of kSA MOS system for stress and thickness monitor<strong>in</strong>gdur<strong>in</strong>g CVD growth. Brown University.Choi, B. J., S. Johnson, and S.V. Sreenivasan. 1999. A high resolution impr<strong>in</strong>t<strong>lithography</strong> mach<strong>in</strong>e for pattern<strong>in</strong>g flat and curved substrates, Department ofMechanical Eng<strong>in</strong>eer<strong>in</strong>g, The University of Texas at Aust<strong>in</strong>. DARPA InterimReport.Choi, B.J, S. Johnson, S.V. Sreenivasan, M. Colburn, T. Bailey, and C.G.Willson. 2000. Partially constra<strong>in</strong>ed compliant stages for high resolution impr<strong>in</strong>t<strong>lithography</strong>. Proceed<strong>in</strong>gs of DETC 2000: ASME Design Eng<strong>in</strong>eer<strong>in</strong>g TechnicalConference, Baltimore, MD.107
Chou, S. Y., P .R. Krauss, and P. J. Renstrom. 1996. Nanoimpr<strong>in</strong>t <strong>lithography</strong>. J.Vac. Sci. Technol B 14(6): 4129-33.Colburn, M. “Step and Flash Impr<strong>in</strong>t Lithography: A Low-Pressure, RoomTemperature Nanoimpr<strong>in</strong>t Lithography.” Ph.D. dissertation, The University ofTexas at Aust<strong>in</strong>, 2001.Colburn, M., S. Johnson, M. Stewart, S. Damle, T. Bailey, B. Choi, M. Wedlake,T. Michaelson, S.V. Sreenivasan, J. Ekerdt, and C. G. Willson. Step and flashimpr<strong>in</strong>t <strong>lithography</strong>: A novel approach to impr<strong>in</strong>t <strong>lithography</strong>. SPIE 1999 AnnualInternational Symposium on Micro<strong>lithography</strong>.Collis, S. S. An Introduction to Numerical Analysis for Computational FluidMechanics. Course notes. Department of Mechanical Eng<strong>in</strong>eer<strong>in</strong>g and MaterialsScience, Rice University, Houston, TX, 2000.Freeland, A. C. “Mathematical model<strong>in</strong>g of the <strong>dynamics</strong> and production ofbiosensors.” Ph.D. dissertation, The University of Texas at Aust<strong>in</strong>, 2000.Haisma, J., M. Verheijan, K. Heuvel, and J. Berg. 1996. Mold-assistednano<strong>lithography</strong>: A process for reliable pattern replication. J. Vac. Sci Technol. B14(6): 4124-28.Hays, D.F. 1962. Squeeze films for rectangular plates. ASME Paper No. 62-Lub-S-9.Huibers, P. 1997. Models for the wavelength dependence of the <strong>in</strong>dex ofrefraction of water. Applied Optics. 36(16): 3785-87.Johnson, S.C. 1999. Selectively compliant orientation stages for impr<strong>in</strong>t<strong>lithography</strong>. M.S. Thesis, Mechanical Eng<strong>in</strong>eer<strong>in</strong>g, The University of Texas,Aust<strong>in</strong>.108
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Asymmetric Fluid-StructureDynamics
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AcknowledgementsFirst of all, I wou
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Table of ContentsList of Tables ...
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6.2.3 Control Software ............
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List of FiguresFigure 1.1 Optical m
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Figure 6.9 Force due to fluid press
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The exponential escalation in the c
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1.2.1 Optical Lithography Process O
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patterns to the desired specificati
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1.3 STEP AND FLASH IMPRINT LITHOGRA
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transferlayerwaferStep 1: Spin-coat
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the etch barrier fluid has an infin
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Researchers at the University of Te
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stage development. Design requireme
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minimum and maximum base layer thic
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square plate with fluid completely
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7. The fluid is assumed incompressi
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⎛ ∂ ⎞⎜τdz ⎟dxdy⎝+ τ
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where V 1 and V 2 correspond to U 1
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ddx⎛⎜h⎝3dp ⎞ ∂h⎟ = 12µ
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dhdtLzhθh αh βxx αx = 0 x βFig
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C2hhtanθ2 21= αxαxβxαxβ( ) (
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⎛⎜ hD⎜⎝6C ⎞1tanθ⎟24µh
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at the plate edges. Freeland obtain
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For the case of 10 psi of pressure,
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are the same as the width of the tr
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orientation stages relative to the
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Wafer ChuckAir SolenoidMounting Pla
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The one degree-of-freedom template
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Figure 3.7 Initial and final desire
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7645321Figure 3.8 Active stage prot
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Chapter 4: Real-Time Gap Sensing Vi
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R( λ)( 4πnd/ λ)2 2 −2αd−αd
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