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Asymmetric fluid-structure dynamics in nanoscale imprint lithography

Asymmetric fluid-structure dynamics in nanoscale imprint lithography

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λE IE R0E R1Film withRefractive Index nAirFilmSubstrateFigure 4.1 Interference effectGap sens<strong>in</strong>g is based on the periodicity of the reflectivity spectrum, asseen <strong>in</strong> equation 4.2. S<strong>in</strong>ce the spectral reflectivity is periodic <strong>in</strong> wavenumber,for 400 ~ 800 nm. Fourier analysis can be used to perform a spectraldecomposition. The calculation of the thickness of an optical th<strong>in</strong> film is trivialonce this <strong>in</strong>formation is obta<strong>in</strong>ed. The thickness of a film can be computed asdiMagFFT= [4.3]2 nwn∆wnwhere i FFT is the <strong>in</strong>dex of the FFT maximum and n wn is the wavenumber averaged<strong>in</strong>dex of refraction. The ratio of sampled po<strong>in</strong>ts <strong>in</strong> the wavenumber spectrumtaken at even <strong>in</strong>tervals over a spectral range,d∆wn1=λm<strong>in</strong>1−λmax, to the number ofpo<strong>in</strong>ts <strong>in</strong> the FFT is def<strong>in</strong>ed as the magnification factor, Mag [Colburn 2001].This method can measure film thickness down to about 350 nm based on awavenumber averaged refractive <strong>in</strong>dex of 1.5 and has been demonstrated to be <strong>in</strong>good agreement with spectral ellipsometry and profilometry. For films below 350nm, Inflection-Maximum-M<strong>in</strong>imum Analysis (IMMA) is used to compute thefilm thickness. The reader is referred to Chapter 8 of Colburn’s dissertation formore detailed <strong>in</strong>formation the theoretical background of FFT-based spectralreflectometry. This gap sens<strong>in</strong>g system is under development for Dissolution55

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