Miller, R. E., P. Bischoff, R. Sumner, S. Bowler, W. Flack, and G. Fong. TheDevelopment of 157nm Small Field and Mid-Field MicroSteppers. SPIE 2000Annual International Symposium on Micro<strong>lithography</strong>.Moore, D. F. 1965. A review of squeeze films. Wear 8:245-63.Moore, D. F. 1964. On the <strong>in</strong>cl<strong>in</strong>ed non-<strong>in</strong>ertial s<strong>in</strong>kage of a flat plate. J. FluidMech. 20(2):321-30.Muzio, E., P. Seidel, M. Mason, J. Cann<strong>in</strong>g, and Gil Sheldon. Lithography Costof Ownership Analysis Revision Number: 4.0 Revision Date: December 1999.www.sematech.org/public/resources/coo/<strong>in</strong>dex.htmParos, J.M. and L. Weisbord. 1965. How to design flexure h<strong>in</strong>ges. Mach<strong>in</strong>eDesign No. T-27, pp. 151-156.Patir, N. and H. S. Cheng. 1978. An average flow model for determ<strong>in</strong><strong>in</strong>g theeffects of three-dimensional roughness on partial hydrodynamic lubrication. J.Lub. Technol. 100:12-17.Sakurai, K. and A. Iida. 1992. Fourier analysis of <strong>in</strong>terference <strong>structure</strong> <strong>in</strong> x-rayspecular reflection from th<strong>in</strong> films. Jpn. J. Appl. Phys. 31:L113-L115.Sheats, J. and B. Smith. Micro<strong>lithography</strong>: Science and Technology. New York:Marcel Dekker, 1998.Stulen, R.H. and D. W. Sweeney. 1999. Extreme Ultraviolet Lithography. IEEEJ. Quantum Electronics 35(5):694-699.Thompson, L. F., C. G. Willson, and M. J. Bowen. Introduction toMicro<strong>lithography</strong>, 2 nd Edition, ACS Professional Reference Book. Wash<strong>in</strong>gton,D. C.: American Chemical Society, 1994.109
Tripp, J. H. 1983. Surface roughness effects <strong>in</strong> hydrodynamic lubrication: Theflow factor method. J. Lub. Techol. 105:458-65.Wang, D., S. G. Thomas, K. L. Wang, Y. Xia, and G. M. Whitesides. 1997.Nanometer scale pattern<strong>in</strong>g and pattern transfer on amorphous Si, crystall<strong>in</strong>e Si,and SiO 2 surfaces us<strong>in</strong>g self-assembled monolayers. Appl. Phys. Lett. 70(12):1593-95.Whidden, T. K., D. K. Ferry, M. N. Kozicki, E. Kim, A. Kumar, J. Wilbur, and G.M. Whitesides. 1996. Pattern transfer to silicon by microcontact pr<strong>in</strong>t<strong>in</strong>g and RIE.Nanotechnology 7: 447-51.110
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Asymmetric Fluid-StructureDynamics
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AcknowledgementsFirst of all, I wou
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Table of ContentsList of Tables ...
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6.2.3 Control Software ............
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List of FiguresFigure 1.1 Optical m
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Figure 6.9 Force due to fluid press
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The exponential escalation in the c
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1.2.1 Optical Lithography Process O
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patterns to the desired specificati
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1.3 STEP AND FLASH IMPRINT LITHOGRA
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transferlayerwaferStep 1: Spin-coat
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the etch barrier fluid has an infin
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Researchers at the University of Te
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stage development. Design requireme
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minimum and maximum base layer thic
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square plate with fluid completely
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7. The fluid is assumed incompressi
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⎛ ∂ ⎞⎜τdz ⎟dxdy⎝+ τ
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where V 1 and V 2 correspond to U 1
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ddx⎛⎜h⎝3dp ⎞ ∂h⎟ = 12µ
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dhdtLzhθh αh βxx αx = 0 x βFig
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C2hhtanθ2 21= αxαxβxαxβ( ) (
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⎛⎜ hD⎜⎝6C ⎞1tanθ⎟24µh
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at the plate edges. Freeland obtain
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For the case of 10 psi of pressure,
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are the same as the width of the tr
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orientation stages relative to the
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Wafer ChuckAir SolenoidMounting Pla
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The one degree-of-freedom template
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Figure 3.7 Initial and final desire
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7645321Figure 3.8 Active stage prot
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Chapter 4: Real-Time Gap Sensing Vi
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R( λ)( 4πnd/ λ)2 2 −2αd−αd
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Rate Monitoring and is adapted for
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