Asymmetric fluid-structure dynamics in nanoscale imprint lithography

layer using a halogen plasma etch. (Step 7) Finally an anisotropic oxygenreactive ion etch is used to transfer a high aspect ratio image to the transfer layer.These high aspect ratio features in the transfer layer can then be used as a maskfor transferring the features into the substrate as in traditional lithography, i.e.metal deposition, etc.1.3.2 Challenges to Step and Flash Imprint LithographyIn developing the SFIL process, researchers face a number of importanttechnical challenges. An important aspect of the research is in the realm ofmechanical engineering, which involves developing a step and repeat machine toimplement the process with active control of the orientation stages for parallelalignment of the template with the wafer substrate. This machine would bring thetemplate into the proximity of the transfer layer through a coarse z-axis actuationstage. Then it would dispense the etch barrier solution in the specific patternusing a micro-liter fluid dispensing system. Next, it would bring the template intocontact with the transfer layer using high-resolution actuators. Finally, it wouldilluminate the etch barrier through the backside of the template. A key issue inthe machine development is to understand the interaction between the quartztemplate, the thin-film etch barrier layer, and the wafer substrate.Once the etch barrier fluid fills the gap between the template and thetransfer layer, the template must be pushed towards the wafer in order tominimize the thickness of the remaining etch barrier base layer. Ideally, the baselayer would be nonexistent in the final imprint process as the etch process that isused to transfer the image to the transfer layer requires minimal or nonexistentresidual base layer. However, this is not practical in the actual implementation as11