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Asymmetric fluid-structure dynamics in nanoscale imprint lithography

Asymmetric fluid-structure dynamics in nanoscale imprint lithography

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damp<strong>in</strong>g from the etch barrier. The dynamic behavior of such systems can bedescribed byand( zD− zD) + K ( z − z ) f ( z, z, D θ θ D )MD z+ C,[5.1]Z A Z A=( θ −θ) τ ( z,D,θ θD)I D θ+ C θD+ K = ,[5.2]θθ0zwhere the <strong>fluid</strong> force and torque are functions of position and orientation. The<strong>fluid</strong> couples the two, otherwise <strong>in</strong>dependent, motions. In the follow<strong>in</strong>g sections,the set of model parameters are presented with details on the selection of <strong>in</strong>itialconditions for the simulation.5.2 SYSTEM PARAMETERS FOR NUMERICAL SIMULATION5.2.1 Etch Barrier Fluid PropertiesThe capillary pressure is obta<strong>in</strong>ed us<strong>in</strong>g the surface tension coefficient forthe etch barrier formulation. The surface tension of the various etch barrierformulations, which is composed of free radical generators and cross-l<strong>in</strong>k<strong>in</strong>gagents dissolved <strong>in</strong> a solution of organic monomer, silylated monomer, anddimethyl siloxane oligomer derivatives, are all nearly identical to with<strong>in</strong>experimental error at 28 dynes/cm [Colburn et al 1999]. If the <strong>fluid</strong> between theplates is water <strong>in</strong>stead of etch barrier, the surface tension is 72 dynes/cm at 20°C.From this, the boundary conditions due to the capillary pressure for the <strong>fluid</strong>volume can be computed. The viscosity of the etch barrier layer is the same asthat of water at room temperature and atmospheric pressure, which is about 1 cP(1 × 10 -3 N⋅s/m 2 ). Both the etch barrier and water were considered to have aconstant viscosity and to be <strong>in</strong>compressible.61

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