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Chapter VII Reactivity at Dislocation….<br />

to be important; the dissolution takes place at moderate under-saturations.<br />

However, both the edge and the screw dislocations are etched in nearly the<br />

same manner and nearly the same rate in many crystals. Different theories of<br />

dissolution, thermodynamic and topo-chemical adsorption are of interest since<br />

they deal with the formation of dislocation etch pits on a crystal surface [15, 16].<br />

The topo-chemical theories suggest the dissolution rate in terms of chemical<br />

reactions on the crystal surface [16, 17]. It is considered that etch pits at the sites<br />

of dislocations are formed as a result of enhanced dissolution caused by the<br />

preferred adsorption of a reactant at that site because of the strain associated<br />

with the dislocation. If the reactants are absorbed more strongly at the site of<br />

dislocation it produces good contrast etch pits.<br />

Topo-chemical theories are attractive for crystalline substances. The<br />

dissolution of crystals involves the formation of reaction products, however, they<br />

poses certain limitations. One limitation is that each etching system has to be<br />

treated independently. Whereas, the thermodynamic theories are based on the<br />

postulate that the energy localized in the vicinity of a dislocation lowers the free<br />

energy needed for the nucleation of unit depth in the surface at the site of the<br />

dislocation.<br />

This decrease in the free energy is the cause of preferred dissolution of the<br />

surface at the emergence points of dislocations. The free energy change<br />

associated with the formation of a mono-molecular pit at dislocation site, ∆G is<br />

given by the following expression,<br />

∆G = 2ra -<br />

r a <br />

<br />

2<br />

- aEd (7.1)<br />

251

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