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i ru nSitron
SILICON
RECTIFIERS
MILITARY TYPES
Available in voltage ratings up to 570V PIV, Transitron's military
type rectifiers are preferred types for new designs in all rectifier
applications. Write for Bulletin TE -1336.
STUD MOUNTED TYPES
High current ratings are achieved through efficient conduction
cooling. Rugged construction and rigid mountings give high shock
and vibration resistance. Write for Bulletin TE -1321.
Type
RATINGS AT 135 °C CASE TEMPERATURE
Peak
Recurrent
Inverse
Voltage
(volts)
Maximum
Average
Forward
Current
(ma)
Peak
Recurrent
Forward
Current
(amps)
114253' 95 1000 4.0
1N254' 190 400 1.2
114255' 380 400 1.2
114256' 570 200 0.6
JAN Types
1N332 400 400 2.5
1 N334 300 400 2.5
1 N336 200 400 2.5
1 N338 100 1000 6.0
RATINGS AT 100 °C AMBIENT
TL -12 100 350 2.0
The proven performance and dependability of the stud mounted
types are now available in a versatile lead mounting arrangement. TL-22 200 350 2.0
High forward conductance assures both high efficiency and good TL.42 400
350
2.0
regulation. Write for Bulletin TE -1335.
TL -61
600
200
1.0
MINIATURE TYPES TJ 5 50 100 .5
Ideal for low current power supply and magnetic amplifier circuits,
the miniature rectifiers are particularly useful in aircraft, missile,
or other critical applications requiring small size and high temperature
reliability. Write for Bulletin TE -1338.
T.110
TJ20
TJ -30
100
200
300
100
100
100
.5
s
.5
MEDIUM POWER TYPES
Transitron's medium power silicon rectifiers are rated up to 20
amperes per cell at 125 °C. Their small size and high efficiency
permits the design of compact lightweight circuits. Complete environmental
protection is assured through hermetic sealing and
rugged construction. Write for Bulletin TE -1337.
HIGH POWER TYPES
Transitron's high power silicon rectifiers are designed for reliable
high temperature service in power supply and magnetic amplifier
circuits requiring up to 35 amperes per cell. Their heavy duty
flexible anode lead and 3/4" stud offer a high degree of mechanical
ruggedness. Write for Bulletin TE -1337.
RATINGS AT 125 C CASE TEMPERATURE
1N248A 50 20 90
IN249A 100 20 90
1N250A 200 20 90
1N41IA 50 35 140
IN412A 100 35 140
1N413A 200 35 140
DIODES
HIGH CONDUCTANCE TYPES
Transitron's subminiature glass silicon diodes feature high forward
conductance and reliable operation at high temperatures.
They are ideal for miniaturized circuitry and other applications
requiring high voltage ratings and low inverse current. Write for
Bulletin TE -1339.
HIGH FREQUENCY TYPES
The silicon bonded diodes are small area junction diodes specifically
designed for high frequency circuits up to 1000 mc, and
fast switching applications requiring recovery times of .15 microseconds
or less. They are particularly useful in detector, discriminator,
logic and high speed transistor circuitry. Write for
Bulletin TE- 1308 -A.
SPECIFICATIONS AT 150 °C
Maximum Inverse Current Minimum
Forward Voltage at Specified Saturation
@ 100 ma @ 25 "C Voltage Voltage
Type (volts) (pa @ volts) (volts)
1N4828 1.0 5 @ -30 40
1N483B 1.0 5 @ -60 80
1N484B 1.0 5 @ -125 150
1N485B 1.0 5 @ -175 200
IN486A 1.0 25 @ -225 250
Type
1N251
1N252
55G
S6G
SPECIFICATIONS AT 100 °C
Forward
Current
at +IV
(ma, min.)
2
4
1
4
Inverse Current
at Specified
Voltage
(/sa @ V)
10 @ -10
10 @ -5
10 @ -10
50 @ -5
Maximum
Operating
Voltage
(volts)
30
20
30
15
In addition to the above products, a wide variety of standard, as well as special,
types are also available. Transitron's special engineering group is available to help
with specific applications. Inquiries concerning your particular problems are invited.