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RRFM 2009 Transactions - European Nuclear Society

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Recently, fuel relocation induced by creep has been observed at the fuel transverse edge region<br />

close to the rail [15]. Because of fuel accumulation at the ‘hot side’ of the transverse cross<br />

sections where the micrographs were obtained, a tensile stress in the thickness direction builds<br />

up and is thought to adversely enhance pore formation. This also contributes to the discrepancy<br />

between observation and estimation.<br />

The high U-loading of the RERTR-9A and -9B restricts the absolute amount of Si available for<br />

diffusion. This is considered the reason why RERTR-9A plates showed thicker ILs and earlier<br />

pore-formation than RERTR-7A plates (see Fig. 3). High U-loading and particle size distribution<br />

have a significant effect that limits the full use of the advantage of Si addition. Therefore,<br />

increasing the as-fabrication Si content must accompany a method to provide Si where it is<br />

needed most. The observation in R6R018 from the RERTR-9B indicates that the addition of<br />

3.5% Si is locally insufficient, suggesting that the addition of at least ~4% as-fabrication Si<br />

content is necessary for U-loading greater than 8 gU/cm 3 and irradiation conditions similar to<br />

RERTR-9B.<br />

5. Conclusions<br />

The side-by-side irradiations of plates with various Si contents showed the efficacy of Si addition<br />

in the Al matrix to reduce IL growth and suppression of the formation of pores in the ILs. Plates<br />

with 2% Si addition have IL thicknesses a factor of three smaller than those without Si. An<br />

analysis shows that 2% Si addition in the matrix is sufficient to sustain the Si effect during<br />

irradiation under typical conditions. However, in a plate with 3.5% Si addition from the RERTR-<br />

9B that had high U-loading (8.5 gU/cm 3 ) and extremely high burnup (119% LEU equiv.), IL grew<br />

thicker than normal and pore started to form because of the insufficient Si content in ILs.<br />

Therefore, for a practical purpose, the addition of at least ~4% as-fabrication Si content appears<br />

to be necessary for U-loading greater than 8 gU/cm 3 and irradiation conditions similar to<br />

RERTR-9B.<br />

6. References<br />

[1] M. Mirandou, S. Arico, L. Gribaudo, S. Balart, RERTR Meeting, 2005.<br />

[2] J.M. Park, H.J. Ryu, S.J. Oh, D.B. Lee, C.K. Kim, Y.S. Kim, G. L. Hofman, RERTR<br />

Meeting, 2006.<br />

[3] G.L. Hofman, Y.S. Kim, J. Rest, M.R. Finlay, <strong>RRFM</strong> Meeting, 2006.<br />

[4] G.L. Hofman, Y.S. Kim, H.J. Ryu, D. Wachs, M.R. Finlay, RERTR Meeting, 2006.<br />

[5] Y.S. Kim, H.J. Ryu, G.L. Hofman, S.L. Hayes, M.R. Finlay, D. Wachs, G. Chang RERTR<br />

Meeting, 2006.<br />

[6] G.L. Hofman, M.R. Finlay, Y.S. Kim, RERTR Meeting, 2004.<br />

[7] Y.S. Kim, G.L. Hofman, H.J. Ryu, J. Rest, RERTR Meeting, 2005.<br />

[8] J. Garces, G. Bozzolo, G. Hofman, J. Rest, RERTR Meeting, 2005.<br />

[9] J.M. Park, H.J. Ryu, C.K. Kim, Y.S. Kim, <strong>RRFM</strong> Meeting, 2008.<br />

[10] D.D Keiser, J.F. Jue, RERTR Meeting, 2008.<br />

[11] H.J. Ryu, J.M. Park, C.K. Kim, Y.S. Kim, RERTR Meeting, 2008.<br />

[12] M. Ugajin, M. Akabori, A. Itoh, H. Someya, T. Nakagawa, K. Ohsawa, RERTR Meeting,<br />

1992.<br />

[13] H.J. Ryu, Y.S. Kim, G.L. Hofman, J.M. Park, C.K. Kim, J. Nucl. Mater., 358 (2006) 52.<br />

[14] W.C. Thurber and R.J. Beaver, ORNL-2602, Oak Ridge National Laboratory, 1959.<br />

[15] G.L. Hofman, Y.S. Kim, A.B. Robinson, <strong>RRFM</strong> Meeting, <strong>2009</strong>.<br />

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