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Local polarization dynamics in ferroelectric materials

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Rep. Prog. Phys. 73 (2010) 056502<br />

S V Kal<strong>in</strong><strong>in</strong> et al<br />

d33 eff (pm/V)<br />

40<br />

0<br />

-40<br />

(a)<br />

d33 eff (pm/V)<br />

80<br />

40<br />

0<br />

-40<br />

(b)<br />

-80<br />

-40 -20 0 20 40<br />

U (V)<br />

-80<br />

-10 3<br />

-10 2<br />

-10<br />

U (V)<br />

10 10 2 10 3<br />

Figure 43. Piezoelectric response as the function of applied voltage for PZT6B and σ S =−P S <strong>in</strong> l<strong>in</strong>ear (a) and logarithmic (b) scales. Solid<br />

curves represent EPCM approximation of the tip; dotted ones correspond to the exact series for sphere–tip <strong>in</strong>teraction energy; dashed curves<br />

are the capacitance approximation. d 33 = 74.94, d 31 =−28.66 and d 15 = 135.59 pm V −1 ; whereas saturated value d33 eff = 72.5pmV−1 is<br />

depicted by arrows <strong>in</strong> parts (b) and (d). Reproduced from [317].<br />

(ii) The Debye screen<strong>in</strong>g radius R d strongly <strong>in</strong>fluences the<br />

piezoresponse at high voltages and thus determ<strong>in</strong>es the<br />

saturation law (i.e. high voltage tails of hysteresis loop),<br />

whereas nucleation voltage depends on R d relatively<br />

weakly. The piezoresponse saturates much quicker at<br />

small R d values than at big ones. The reason for this effect<br />

is expla<strong>in</strong>ed by the quick vanish<strong>in</strong>g of the tip potential at<br />

small R d radii.<br />

4.3.1.3. Implications for switch<strong>in</strong>g mechanism. Experimentally<br />

obta<strong>in</strong>ed hysteresis loops nearly always demonstrate<br />

much faster saturation than the loops predicted from thermodynamic<br />

theory. This behavior can be ascribed to several possible<br />

mechanisms, <strong>in</strong>clud<strong>in</strong>g (a) delayed doma<strong>in</strong> nucleation (compared<br />

with thermodynamic model), (b) f<strong>in</strong>ite conductivity and<br />

faster decay of electrostatic fields <strong>in</strong> the material, (c) k<strong>in</strong>etic<br />

effects on doma<strong>in</strong> wall motion and (d) surface screen<strong>in</strong>g and<br />

charge <strong>in</strong>jection effects. These mechanisms are discussed <strong>in</strong><br />

detail below:<br />

(a) Delayed nucleation: the activation barrier for nucleation<br />

is extremely sensitive to the maximal electric field <strong>in</strong> the tip–<br />

surface junction region, which can be significantly reduced by<br />

surface adsorbates, quantum effects due to a f<strong>in</strong>ite Thomas–<br />

Fermi length <strong>in</strong> the tip material, <strong>polarization</strong> suppression at<br />

surfaces, etc. These factors are significantly less important<br />

for determ<strong>in</strong><strong>in</strong>g the fields at larger separation from contact,<br />

and hence affect primarily doma<strong>in</strong> nucleation, rather than<br />

subsequent doma<strong>in</strong> wall motion. Poor tip–surface contact can<br />

lead to a rapid jump from the <strong>in</strong>itial to the f<strong>in</strong>al state. This<br />

effect will result <strong>in</strong> a sudden onset of switch<strong>in</strong>g, <strong>in</strong>creas<strong>in</strong>g<br />

the nucleation bias and render<strong>in</strong>g the loop more squareshaped.<br />

However, the theory <strong>in</strong> section 4 suggests that to<br />

account for experimental observations, the nucleated doma<strong>in</strong><br />

size should be significantly larger than the tip size, and<br />

that nucleation should occur only for very high voltages.<br />

Given the generally good agreement between experimental and<br />

theoretical nucleation biases, we believe this effect does not<br />

expla<strong>in</strong> the experimental f<strong>in</strong>d<strong>in</strong>gs.<br />

(b) Conductivity and f<strong>in</strong>ite Debye length: the second possible<br />

explanation for the observed behavior is the f<strong>in</strong>ite conductivity<br />

of the sample and/or the surround<strong>in</strong>g medium. In this case,<br />

screen<strong>in</strong>g by free carriers will result <strong>in</strong> a cross-over from a<br />

power law to an exponential decay of electrostatic fields at<br />

a depth comparable to the Debye length. This was shown<br />

to result <strong>in</strong> self-limit<strong>in</strong>g effect <strong>in</strong> doma<strong>in</strong> growth. Given that<br />

<strong>in</strong> most <strong>materials</strong> studied to date the Debye lengths are on<br />

the order of micrometers, this explanation cannot universally<br />

account for the experimental observations.<br />

(c) Doma<strong>in</strong> wall motion k<strong>in</strong>etics: <strong>in</strong> a realistic material, doma<strong>in</strong><br />

growth will be affected by the k<strong>in</strong>etics of doma<strong>in</strong> wall motion.<br />

In the weak p<strong>in</strong>n<strong>in</strong>g regime, the doma<strong>in</strong> size is close to the<br />

thermodynamically predicted size, while <strong>in</strong> the k<strong>in</strong>etic (strong<br />

p<strong>in</strong>n<strong>in</strong>g) regime the doma<strong>in</strong> is significantly smaller. Both<br />

doma<strong>in</strong> length and radius will grow slower than predicted<br />

by the thermodynamic model. The detailed effect of p<strong>in</strong>n<strong>in</strong>g<br />

on doma<strong>in</strong> shape is difficult to predict, s<strong>in</strong>ce the field decays<br />

faster <strong>in</strong> the z-direction, but at the same time surface p<strong>in</strong>n<strong>in</strong>g<br />

can dom<strong>in</strong>ate the wall <strong>dynamics</strong>. In either case, p<strong>in</strong>n<strong>in</strong>g<br />

is likely to broaden the hysteresis loop compared with its<br />

thermodynamic shape, and is unlikely to affect nucleation,<br />

contrary to experimental observations.<br />

(d) Surface conductivity effect: one of the most common<br />

factors <strong>in</strong> AFM experiments under ambient conditions is the<br />

formation and diffusion of charged species, as analyzed <strong>in</strong><br />

section 3.2.5. Here we note that surface charg<strong>in</strong>g can result <strong>in</strong><br />

rapid broaden<strong>in</strong>g of the doma<strong>in</strong> <strong>in</strong> the radial direction, i.e. the<br />

electrical radius of tip–surface contact grows with time. Given<br />

that only the part of the surface <strong>in</strong> contact with the tip results<br />

<strong>in</strong> cantilever deflection (i.e. the electrical radius is much larger<br />

than the mechanical radius), this will result <strong>in</strong> rapid saturation<br />

of the hysteresis loop. Note that similar effects were observed<br />

<strong>in</strong>, e.g., dip-pen nanolithography [300] and the k<strong>in</strong>etics of<br />

this process is very similar to the experimentally observed<br />

logarithmic k<strong>in</strong>etics of tip-<strong>in</strong>duced doma<strong>in</strong> growth. Estimat<strong>in</strong>g<br />

carrier mobility at D ∼ 10 −11 m 2 s −1 , diffusion length <strong>in</strong> 10 s is<br />

1 µm. At the same time, the surface charge diffusion is unlikely<br />

to affect the nucleation stage, s<strong>in</strong>ce the latter is controlled by<br />

the region of maximal electric field directly at the tip–surface<br />

junction. Also, charge <strong>dynamics</strong> is unlikely to affect PFM<br />

imag<strong>in</strong>g, s<strong>in</strong>ce the characteristic frequencies are significantly<br />

larger and at 100 kHz the diffusion length is 10 nm.<br />

44

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