Local polarization dynamics in ferroelectric materials
Local polarization dynamics in ferroelectric materials
Local polarization dynamics in ferroelectric materials
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Rep. Prog. Phys. 73 (2010) 056502<br />
S V Kal<strong>in</strong><strong>in</strong> et al<br />
d33 eff (pm/V)<br />
40<br />
0<br />
-40<br />
(a)<br />
d33 eff (pm/V)<br />
80<br />
40<br />
0<br />
-40<br />
(b)<br />
-80<br />
-40 -20 0 20 40<br />
U (V)<br />
-80<br />
-10 3<br />
-10 2<br />
-10<br />
U (V)<br />
10 10 2 10 3<br />
Figure 43. Piezoelectric response as the function of applied voltage for PZT6B and σ S =−P S <strong>in</strong> l<strong>in</strong>ear (a) and logarithmic (b) scales. Solid<br />
curves represent EPCM approximation of the tip; dotted ones correspond to the exact series for sphere–tip <strong>in</strong>teraction energy; dashed curves<br />
are the capacitance approximation. d 33 = 74.94, d 31 =−28.66 and d 15 = 135.59 pm V −1 ; whereas saturated value d33 eff = 72.5pmV−1 is<br />
depicted by arrows <strong>in</strong> parts (b) and (d). Reproduced from [317].<br />
(ii) The Debye screen<strong>in</strong>g radius R d strongly <strong>in</strong>fluences the<br />
piezoresponse at high voltages and thus determ<strong>in</strong>es the<br />
saturation law (i.e. high voltage tails of hysteresis loop),<br />
whereas nucleation voltage depends on R d relatively<br />
weakly. The piezoresponse saturates much quicker at<br />
small R d values than at big ones. The reason for this effect<br />
is expla<strong>in</strong>ed by the quick vanish<strong>in</strong>g of the tip potential at<br />
small R d radii.<br />
4.3.1.3. Implications for switch<strong>in</strong>g mechanism. Experimentally<br />
obta<strong>in</strong>ed hysteresis loops nearly always demonstrate<br />
much faster saturation than the loops predicted from thermodynamic<br />
theory. This behavior can be ascribed to several possible<br />
mechanisms, <strong>in</strong>clud<strong>in</strong>g (a) delayed doma<strong>in</strong> nucleation (compared<br />
with thermodynamic model), (b) f<strong>in</strong>ite conductivity and<br />
faster decay of electrostatic fields <strong>in</strong> the material, (c) k<strong>in</strong>etic<br />
effects on doma<strong>in</strong> wall motion and (d) surface screen<strong>in</strong>g and<br />
charge <strong>in</strong>jection effects. These mechanisms are discussed <strong>in</strong><br />
detail below:<br />
(a) Delayed nucleation: the activation barrier for nucleation<br />
is extremely sensitive to the maximal electric field <strong>in</strong> the tip–<br />
surface junction region, which can be significantly reduced by<br />
surface adsorbates, quantum effects due to a f<strong>in</strong>ite Thomas–<br />
Fermi length <strong>in</strong> the tip material, <strong>polarization</strong> suppression at<br />
surfaces, etc. These factors are significantly less important<br />
for determ<strong>in</strong><strong>in</strong>g the fields at larger separation from contact,<br />
and hence affect primarily doma<strong>in</strong> nucleation, rather than<br />
subsequent doma<strong>in</strong> wall motion. Poor tip–surface contact can<br />
lead to a rapid jump from the <strong>in</strong>itial to the f<strong>in</strong>al state. This<br />
effect will result <strong>in</strong> a sudden onset of switch<strong>in</strong>g, <strong>in</strong>creas<strong>in</strong>g<br />
the nucleation bias and render<strong>in</strong>g the loop more squareshaped.<br />
However, the theory <strong>in</strong> section 4 suggests that to<br />
account for experimental observations, the nucleated doma<strong>in</strong><br />
size should be significantly larger than the tip size, and<br />
that nucleation should occur only for very high voltages.<br />
Given the generally good agreement between experimental and<br />
theoretical nucleation biases, we believe this effect does not<br />
expla<strong>in</strong> the experimental f<strong>in</strong>d<strong>in</strong>gs.<br />
(b) Conductivity and f<strong>in</strong>ite Debye length: the second possible<br />
explanation for the observed behavior is the f<strong>in</strong>ite conductivity<br />
of the sample and/or the surround<strong>in</strong>g medium. In this case,<br />
screen<strong>in</strong>g by free carriers will result <strong>in</strong> a cross-over from a<br />
power law to an exponential decay of electrostatic fields at<br />
a depth comparable to the Debye length. This was shown<br />
to result <strong>in</strong> self-limit<strong>in</strong>g effect <strong>in</strong> doma<strong>in</strong> growth. Given that<br />
<strong>in</strong> most <strong>materials</strong> studied to date the Debye lengths are on<br />
the order of micrometers, this explanation cannot universally<br />
account for the experimental observations.<br />
(c) Doma<strong>in</strong> wall motion k<strong>in</strong>etics: <strong>in</strong> a realistic material, doma<strong>in</strong><br />
growth will be affected by the k<strong>in</strong>etics of doma<strong>in</strong> wall motion.<br />
In the weak p<strong>in</strong>n<strong>in</strong>g regime, the doma<strong>in</strong> size is close to the<br />
thermodynamically predicted size, while <strong>in</strong> the k<strong>in</strong>etic (strong<br />
p<strong>in</strong>n<strong>in</strong>g) regime the doma<strong>in</strong> is significantly smaller. Both<br />
doma<strong>in</strong> length and radius will grow slower than predicted<br />
by the thermodynamic model. The detailed effect of p<strong>in</strong>n<strong>in</strong>g<br />
on doma<strong>in</strong> shape is difficult to predict, s<strong>in</strong>ce the field decays<br />
faster <strong>in</strong> the z-direction, but at the same time surface p<strong>in</strong>n<strong>in</strong>g<br />
can dom<strong>in</strong>ate the wall <strong>dynamics</strong>. In either case, p<strong>in</strong>n<strong>in</strong>g<br />
is likely to broaden the hysteresis loop compared with its<br />
thermodynamic shape, and is unlikely to affect nucleation,<br />
contrary to experimental observations.<br />
(d) Surface conductivity effect: one of the most common<br />
factors <strong>in</strong> AFM experiments under ambient conditions is the<br />
formation and diffusion of charged species, as analyzed <strong>in</strong><br />
section 3.2.5. Here we note that surface charg<strong>in</strong>g can result <strong>in</strong><br />
rapid broaden<strong>in</strong>g of the doma<strong>in</strong> <strong>in</strong> the radial direction, i.e. the<br />
electrical radius of tip–surface contact grows with time. Given<br />
that only the part of the surface <strong>in</strong> contact with the tip results<br />
<strong>in</strong> cantilever deflection (i.e. the electrical radius is much larger<br />
than the mechanical radius), this will result <strong>in</strong> rapid saturation<br />
of the hysteresis loop. Note that similar effects were observed<br />
<strong>in</strong>, e.g., dip-pen nanolithography [300] and the k<strong>in</strong>etics of<br />
this process is very similar to the experimentally observed<br />
logarithmic k<strong>in</strong>etics of tip-<strong>in</strong>duced doma<strong>in</strong> growth. Estimat<strong>in</strong>g<br />
carrier mobility at D ∼ 10 −11 m 2 s −1 , diffusion length <strong>in</strong> 10 s is<br />
1 µm. At the same time, the surface charge diffusion is unlikely<br />
to affect the nucleation stage, s<strong>in</strong>ce the latter is controlled by<br />
the region of maximal electric field directly at the tip–surface<br />
junction. Also, charge <strong>dynamics</strong> is unlikely to affect PFM<br />
imag<strong>in</strong>g, s<strong>in</strong>ce the characteristic frequencies are significantly<br />
larger and at 100 kHz the diffusion length is 10 nm.<br />
44