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Microcomputer Circuits and Processes

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(al<br />

(bl<br />

Figure 4.6<br />

(a) Same as in figure 4.5, but with bias field increased. Domains aligned opposite to the<br />

bias field direction begin to shrink.<br />

(b) Bias field increased enough to shrink oppositely aligned domains into small magnetic<br />

bubbles.<br />

another, the bubbles will move to the place of greater field strength, in<br />

the same way as iron filings are attracted to the end of a bar magnet.<br />

In a bubble memory, a bubble or absence of a bubble represent a<br />

logical 1 or a 0 respectively, <strong>and</strong> these bits are made to hop around in a<br />

cyclic fashion from one memory cell to another. Since the bits are<br />

magnetic, the memory cellsmust be made ofmagnetic material. Figure 4.7<br />

shows two cells out of a long line of cells. The progress of one bubble<br />

from the first cell to the second is also shown.<br />

2 3<br />

I<br />

\<br />

5<br />

I<br />

6 7 8<br />

Figure 4.7<br />

The history of a bubble <strong>and</strong> two memory cells, or 'chevrons'. As the field is slowly<br />

rotated, the bubble follows, then jumps across the cell gap. The arrows show directions<br />

of the magnetic field as it rotates.<br />

48

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