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Assessment and Future Directions of Nonlinear Model Predictive ...

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Application <strong>of</strong> the NEPSAC <strong>Nonlinear</strong><strong>Predictive</strong> Control Strategy to a SemiconductorReactorRobin De Keyser 1 <strong>and</strong> James Donald III 21 Ghent University, EeSA-department <strong>of</strong> Electrical energy, Systems <strong>and</strong> Automation,Technologiepark 913, 9052 GENT, Belgiumrdk@autoctrl.UGent.be2 ASMA, Phoenix, Arizona, USA1 IntroductionIncreased requirements <strong>of</strong> flexible production have led to the development <strong>of</strong>single-wafer processing equipment for integrated circuit fabrication. For commerciallyfeasible throughput, it is substantial to minimize the process cycletime by heating only the wafer surface, in an extremely short time period. Thisis only possible using radiation heating, leading to RTP systems - Rapid ThermalProcessing. Under such circumstances the system is no longer isothermal<strong>and</strong> temperature uniformity control becomes an issue <strong>of</strong> considerable concern<strong>and</strong> technical difficulty. Commercial RTCVD reactors (Rapid Thermal ChemicalVapor Deposition) have been in use for more than a decade, but the technologystill suffers from some limitations [6]. One <strong>of</strong> these is the inability to achieve withcommercial control equipment an adequate temperature uniformity across thewafer surface during the rapid heating phases (e.g. from room temperature upto 1100 o C in the order <strong>of</strong> 1 minute). Deposition <strong>of</strong> silicon should be performed ina manner which minimizes crystalline growth defects, such as lattice slip. Suchdefects are induced by thermal gradients in the wafer during high temperatureprocessing. For example, while gradients <strong>of</strong> about 100 o Cacrossawafermaybetolerable at a process temperature <strong>of</strong> 800 o C, respective gradients <strong>of</strong> only 2 − 3 o Care allowable at process temperatures <strong>of</strong> 1100 o C. Due to the radiant type <strong>of</strong>heating, these semiconductor reactors represent a highly nonlinear interactivemulti-input multi-output system.The problem <strong>of</strong> RTP-control has been extensively dealt with in many researchprojects during the 1990’s [6]. The current paper presents (partial) results <strong>of</strong>an extensive research project. This project ran during the 2 nd half <strong>of</strong> the 90’sbetween ASM America Inc. (manufacturer <strong>of</strong> RTP equipment) <strong>and</strong> Ghent University(developer <strong>of</strong> EPSAC <strong>Model</strong> based <strong>Predictive</strong> Control technology). TheEPSAC (Extended Prediction Self-Adaptive Control) strategy is further referredin [2, 3, 4, 5]. The paper is organized as follows: section 2 introduces the underlyingcontrol problem; section 3 reviews briefly the EPSAC/NEPSAC strategy;R. Findeisen et al. (Eds.): <strong>Assessment</strong> <strong>and</strong> <strong>Future</strong> <strong>Directions</strong>, LNCIS 358, pp. 503–512, 2007.springerlink.com c○ Springer-Verlag Berlin Heidelberg 2007

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