MEMORY DATABOOK - Al Kossow's Bitsavers

----------------.... DYNAMIC RAM· MSM3764AAS/RS •AC CHARACTERISTICS(Recommended operating conditions unless otherwise noted. I Note 1,2,3MSM3764A-12 MSM3764A-15 MSM3764A-20Parameter Symbol Units NoteMin. Max. Min. Max. Min. Max.Refresh period tREF ms 2 2 2Random read or write cycle time tRC ns 220 260 330Read-write cycle time tRWC ns 245 280 345Page mode cycle time tpc ns 120 145 190Access time from R AS tRAC ns 120 150 200 4,6Access time from CAS tCAC ns 60 75 100 5,6Output buffer turn-off delay tOFF ns a 35 a 40 a 50Transition time tT ns 3 35 3 35 3 50RAS precharge time tRP ns 90 100 120RAS pulse width tRAS ns 120 10,000 150 10,000 200 10,000RAS hold time tRSH ns 60 75 100CAS precharge time (Page cyclel tcP ns 50 60 80CAS pulse width tCAS ns 60 10,000 75 10,000 100 10,000CAS hold time tCSH ns 120 150 200RAS to CAS delay time tRCD ns 25 60 25 75 30 100 7CAS to RAS precharge time tCRP ns a 0 0Row Address set-up time tASR ns 0 0 0Row Address hold time tRAH ns 15 15 20Column Address set-up time tASC ns 0 0 0Column Address hold time tCAH ns 20 20 25Column Address hold timereferenced to R AStARns80 95 125Read command set-up time tRCS ns 0 0 aRead command hold time tRCH ns 0 0 aWrite command set-up time twcs ns -10 -10 -10 8Write command hold time tWCH ns 40 45 55Write command hold timereferenced to RAStWCRns100 120 155Write command pulse width twp ns 40 45 55Write command to RAS lead time tRWL ns 40 45 55Write command to CAS lead time tCWL ns 40 45 55Data-in set-up time tDS ns 0 a 0Data-in hold time tDH ns 40 45 55Data-in hold time referencedto RAstDHRns100 120 155CAS to WE delay tCWD ns 40 45 55 8RAS to WE delay tRWD ns 100 120 155 8Read command hold timereferenced to RAStRRHnsa 0 aCAS precharge time tCPN ns 30 35 4595