MEMORY DATABOOK - Al Kossow's Bitsavers

·EEPROM·MSM2816ARS.I---------------------------------------• CE control write cycleAddress.. twcCEOE%0'WE~Data OuttDV-Data In Data Valid)000tDS-J...-tDHNotes: 1. WE is noise protected. No write cycle may be initiated by write pulses for 20 ns or shorter.2. Data must be set valid within 1 liS after the start of a write cycle.(3) Write/erase cycle (High-voltage programming mode)(V CC = 5V ±5%, Ta = DoC "v 70° C)LimitsParameter Symbol ConditionsMIN MAXUnitVpp address setup time tAS 10 - nsVpp CE setup time tcs 10 - nsVpp data setup time tDS 0 - nsData hold time tCH Vpp = 6V 50 - nsWrite pulse width twp Vpp = 12V 9 70 msWrite recovery time tWR Vpp = 6V 50 - nsChip erase setup time tos Vpp=6V, VOE= 12V 10 - nsChip erase hold time tOH Vpp=6V, VOE= 12V 10 - nsVpp OE setup time taos Vpp = 6V 10 - nsVpp OE hold time taoH Vpp = 6V 10 - nsWrite inhibit time during power-up tlNIT VCC > VWI 5 20 ms426