MEMORY DATABOOK - Al Kossow's Bitsavers

.-=C=-.--=-K __I_---=s~e_rn_l___=_c_O_ncl_U_C_.orMSM514256RS262,144-WORD x 4-BIT DYNAMIC RAM ______ ~~GENERAL DESCRIPTIONThe MSM514256RS is a new generation dynamic RAM organized as 262,144 words by 4 bits.The technology used to fabricate the MSM514256RS is OKI's silicon gate CMOS process technology.The device operates from a single +5V power supply. Its I/O pins are TTL compatible.FEATURES• Silicon gate, N-well CMOS, 1 -transistormemory cell• 262,144 words by 4 bits• Standard 20-pin plastic DIP• Family organizationFamilyMSM514256-10RSMSM514256-12RSAccess Time(MAX)100 ns120 nsCycle TimePower Dissipation(MIN) Operating Standby(MAX)(MAX)190 ns 413mW220 ns 385mW11 mW• Single +5V supply, ±1 0% tolerance• Input: TTL compatible, address input, datainput latch• Output: TTL compatible, tristate, non latch• Refresh: 512 cycles/8 ms• Output impedance controllable through earlywrite and OE operations• Fast page mode, read modify write capability• CAS before RAS refresh, CAS before RAShidden refresh, RAS only refresh capability• "Gated" CAS• Built-in VBB generator circuitFUNCTIONAL BLOCK DIAGRAMt----- WEMemoryCellsOQ,-OQ,Vce ----Y--L _____vss----'OnchipVBB219