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MEMORY DATABOOK - Al Kossow's Bitsavers

MEMORY DATABOOK - Al Kossow's Bitsavers

MEMORY DATABOOK - Al Kossow's Bitsavers

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OKI semiconductorMSM41256JS262144-BIT DYNAMIC RANDOM ACCESS <strong>MEMORY</strong> < Page Mode Type>GENERAL DESCRIPTIONThe Oki MSM41256 is a fully decoded, dynamic NMOS random access memory organized as 262144 one-bit words.The design is optimized for high-speed, high performance applications such as mainframe memory, buffer memory,peripheral storage and environments where low power dissipation and compact layout is required.Multiplexed row and column address inputs permit the MSM41256 to be housed in a standard 18·pin PLCC, Pin·outsconform to the JEDEC approved pin out.The MSM41256 is fabricated using silicon gate NMOS and Oki's advanced Double-Layer Polysilicon process. Thisprocess, coupled with single·transistor memory storage cells, permits maximum circuit density and minimal chipsize. Dynamic circuitry is employed in the design, including the sense amplifiers.Clock timing requirements are noncritical, and power supply tolerance is very wide. <strong>Al</strong>l inputs and output are TTLcompatible.FEATURES.262144 x 1 RAM, 18-pin PLCCpackage • <strong>Al</strong>l inputs TTL compatible, low capacitive load• Silicon-gate, Double Poly NMOS, single transistor cell • Three-state TTL compatible output• Row access time,120 nsmax. (MSM41256-12JS)150 ns max. (MSM41256-15JS)• Cycle time,230 ns min. (MSM41256-12JS)260 ns min. (MSM41256·15JS)• Low power: 385 mW/360 mW active28 mW max. standby• Single +5V Supply, ± 1 0% tolerance• "Gated" CAS• 4 ms/256 refresh cycles• Common 110 capabil ity using "Early Write"operatio,;• Output unlatched at cycle and allows extended pageboundary and two-dimensional chip select• Read-Modify-Write, RAS-only refresh, and PageMode capability• On-chip latches for Addresses and Data-in• On-chip substrate bias generator for highperformancePIN CONFIGURATIONDin A, VSS CASWERASNC2 1 1817Pin NamesFunctionDout Ao - A" Address InputsRASRow Addr.s. StrobeA~CASColumn Addres. StrobeNCWE"Write EnableA~ Din Data InputA: Dout Data OutputVCCPower (+5V)VSSGround (OV)NCNo ConnectionA* A* A*1Vee 7 5 • Refresh Addr.ss122

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