MEMORY DATABOOK - Al Kossow's Bitsavers

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---------------------DYNAMIC RAM, MSM41256JS _PAGE MODE WRITE CYCLE~ "H", "L" = Don't CarePAGE MODE, READ-MODIFY-WRITE CYCLERASVIHVIL -CAS VIH - --H---.
• DYNAMIC RAM· MSM41256JS •• ------------------HIDDEN REFRESHAddressesDOUT~ "H", "L" = Don't CareDESCRIPTIONAddress Inputs:A total of eighteen binary input address bits are requiredto decode any 1 of 262144 storage cell locationswith in the MSM41256 Nine row-address bits are establishedon the input pins (Ao - A,) and latched withthe Row Address Strobe (RAS). The Nine columnaddressbits are established on the input pins andlatched with the Column Address Strobe (CAS). <strong>Al</strong>linput addresses must be stable on or before the fallingedge of RAS, CAS is internally inhibited (or "gated")by RAS to permit triggering of CAS as soon as the RowAddress Hold Time (tRAH) specification has beensatisfied and the address inputs have been changedfrom row-addresses to column-addresses.Write Enable:The read mode or write mode is selected with the WEinput. A logic high (1) on WE dictates read mode;logic low (0) dictates write mode. Data input is disabledwhen read mode is selected.Data Input:Data is written into the MSM41256 during a write orread-write cycle. The last falling edge of WE or CAS isa strobe for the Data In (DIN) register. In a writecycle, if WE is brought low (write mode) before CAS,DIN is strobed by CAS, and the set-up and hold timesare referenced to CAS. I n a read-write cycle, WE willbe delayed until CAS has made its negative transition.Thus DIN is strobed by WE, and set-up and hold timesare referenced to WE.Data Output:The output buffer is three-state TTL compatible witha fan-out of two standard TTL loads. Data-out is thesame polarity as data-in. T/1e output is in a high impedancestate until CAS is brought low. In a read cycle,Or read-write cycle, the output is valid after tRAC fromtransition of RAS when tRCD (max.) is satisfied, orafter tCAC from transition of CAS when the transitionoccurs after tRCD (max.). Data remain valid until CASis returned to a high level. In a write cycle the identicalsequence occurs, but data is not valid.Page Mode:Page-mode operation permits strobing the row-addressinto the MSM41256 while maintaining RAS at a logiclow (0) throughout all successive memory operations inwhich the row-address doesn't change. Thus the powerdissipated by the negative gOing edge of RAS is saved.Further, access and cycle times are decreased becausethe time normally required to strobe a new row-addressis eliminated.Refresh:Refresh of the dynamic memory cells is accompl ishedby performing a memory cycle at each of the 256 rowaddresses(Ao - A,) at least every four milliseconds.During refresh, either VIL or VIH is permitted for A,.FfAS only refresh avoids any' output during refreshbecause the output buffer is in the high impedancestate unless CAS is brought low. Strobing each of 256row-addresses with FfAS will cause all bits in each rowto be refreshed. Further RAS·only refresh results in asubstantial reduction in power dissipation.Hidden Refresh:FfAS ONLY REFRESH CYCLE may take place whilemaintaining valid output data. This feature is referredto as Hidden Refresh.Hidden Refresh is performed by holding CAS as VILfrom a previous memory read cycle.130
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MEMORYDATABOOK1986
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CONTENTSo IC MEMORY LINE-UP AND TYP
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MSM28201 AASMSM53256RSMSK531000RS
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IC MEMORY LINE-UP AND TYPICALCHARAC
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---------.IC MEMORY LINE-UP AND TYP
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---------I.IC MEMORY LINE-UP AND TY
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----------_IC MEMORY LINE-UP AND TY
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PACKAGINGPACKAGESNo. RS GS JS US YS
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------------------.PACKAGING ••
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oIIIRELIABILITY INFORMATION .......
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I\JOl~rt-ProcessmentAcceptanceof or
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• RELIABILITY INFORMATION ••
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• RELIABILITY INFORMATION ••
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• RELIABILITY INFORMATION .'-----
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D MOS MEMORY HANDLING PRECAUTIONS .
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D EPROM WRITING AND ERASURE .......
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• EPROM WRITING AND ERASURE •
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MASK ROM CUSTOMER PROGRAMSPECIFICAT
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DD MASK ROM DEVELOPMENT FLOWCHART..
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D TERMINOLOGY AND SYMBOLS .........
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.TERMINOLOGYANDSyMBOLS.------------
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• TERMINOLOGY AND SYMBOLS ... ---
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_TERMINOLOGY AND SYMBOLS _._-------
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MOSDYNAMICRAMS
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----------------.... DYNAMIC RAM·
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----------------__ DYNAMIC RAM· MS
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________________... DYNAMIC RAM . M
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----------------... DYNAMIC RAM· M
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_________________ • DYNAMIC RAM·
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--------------------11. DYNAMIC RAM
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Page 179 and 180: .OVNAMICRAM·MSM41464RS.-----------
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• DYNAMIC RAM· MSM414256RS .----
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• DYNAMIC RAM • MSM414256RS .--
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• DYNAMIC RAM 'MSM414256RS .-----
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• DYNAMIC RAM . MSM414256RS .1---
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• DYNAMIC RAM . MSM414256RS .1---
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• DYNAMIC RAM· MSM414256RS •
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_ DYNAMIC RAM· MSM411 OOORS ___ --
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• DYNAMIC RAM· MSM411 OOORS •
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• DYNAMIC RAM· MSM411 OOORS ...
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OKI semiconductorMSM411 001 RS10485
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• DYNAMIC RAM· MSM411 001 RS .--
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• DYNAMIC RAM· MSM411001 RS •
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• DYNAMIC RAM· MSM411 001 RS .--
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_ DYNAMIC RAM· MSM411 001 RS ___ -
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• DYNAMIC RAM' MSM411 001 RS •
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• DYNAMIC RAM· MSM411 001 RS .1-
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OKI semiconductor ~----------------
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O __ K __ I __ seMSM514257RS__ rn_I
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• DYNAMIC RAM· MSM37S64ARS/37S64
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_ DYNAMIC RAM· MSM37S64ARS/37S64RS
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_O_K __ I __se_rn_I_C_O_nc:I_U_c_.o
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• DYNAMIC RAM· MSC2301 YS9/KS9 .
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_ DYNAMIC RAM· MSC2301 YS9/KS9 ---
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• DYNAMIC RAM· MSC2301 YS9/KS9
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• DYNAMIC RAM· MSC2304YSS/KSS .1
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.DYNAMICRAM·MSC2304YSS/KSS.-------
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• DYNAMIC RAM· MSC2304YSS/KSS .1
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_______________.... DYNAMIC RAM· M
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---------------..... DYNAMIC RAM·
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----------------1. DYNAMIC RAM· MS
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----------------. DYNAMIC RAM· MSC
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---------------1. DYNAMIC RAM· MSC
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------------------------------___ O
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-----------------11. DYNAMIC RAM·
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MOSSTATICRAMS
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------------------1. STATIC RAM ·M
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-------------------1. STATIC RAM·
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OKI semiconductorMSM2128RS2 KW x 8
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-------------------11. STATIC RAM
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-------------------11. STATIC RAM
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_______.,..--__________-11. STATIC
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-------------------. STATIC RAM 'MS
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OKI semiconductorMSM5128 - 20GSK204
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-----------------. STATIC RAM· MSM
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-----------------. STATIC RAM· MSM
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OKI semiconductorMSM5126RS2048-WORD
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-------------------. STATIC RAM 'MS
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-------------------. STATIC RAM ·M
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------------------. STATIC RAM· MS
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------------------. STATIC RAM· MS
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-----------------11. STATIC RAM· M
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-----------------1. STATIC RAM· MS
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-----------------1. STATIC RAM· MS
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-----------------... STATIC RAM ·M
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o __ K__ I __MSM5188USse_rn_IC_O_nc
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--------------------11. STATIC RAM
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___________________ • STATIC RAM
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-----------------. STATIC RAM' MSM5
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-----------------. STATIC RAM ·MSM
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-----------------. STATIC RAM' MSM5
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----------------1. STATIC RAM· MSM
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-----------------I.STATICRAM·MSM51
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----------------... STATIC RAM· MS
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MOSMASKROMS
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------------------___ • MASK ROM
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-----------------__._ MASK ROM ·MS
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------------------.... MASK ROM . M
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-----------------_____ MASK ROM· M
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-----------------____ MASK ROM . MS
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------------------..... MASK ROM ·
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-----------------_____ MASK ROM· M
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------------------___ MASK ROM· MS
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OKI semiconductorMSM28201AAS1M BIT
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-----------------____ MASK ROM . MS
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OKI semiconductorMSM2764AS8192 x 8
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.EPROM·MSM2764AS •• ----------
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.EPROM·MSM2764AS.I----------------
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OKI semiconductorMSM27128AS16384 x
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.EPROM·MSM27128AS •• ---------
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.EPROM·MSM27128AS •• ---------
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.EPROM·MSM27256AS •• ---------
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.EPROM·MSM27256AS •• ---------
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.EPROM·MSM27512AS •• ---------
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.EPROM·MSM27512AS.--------~-------
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.EPROM·MSM271000AS •.-----------
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.EPROM·MSM271000AS •• --------
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.EPROM·MSM271000AS •• --------
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.EPROM·MSM271024AS.---------------
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.EPROM·MSM271024AS.I--------------
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.EPROM·MSM271024AS •• --------
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.EPROM·MSM27C64AS •• ---------
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_EPROM·MSM27C64AS ___ ------------
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_EPROM·MSM27C64AS_._--------------
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.EPROM·MSM27C128AS .--------------
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.EPROM·MSM27C128AS.I--------------
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.EPROM·MSM27C128AS •• --------
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_EPROM·MSM27C1024AS ___ ----------
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.EPROM·MSM27C1024AS.--------------
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_EPROM·MSM27C1024AS-.-------------
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OKI semiconductorMSM2816ARS2K x 8 B
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.EEPROM·MSM2816ARS.I--------------
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.EEPROM·MSM2816ARS.---------------
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·EEPROM·MSM2816ARS.I-------------
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IIi) CROSS REFERENCE LIST1. DYNAMIC
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....Co)I\JStructureTotalBit§ori_\
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~c.J~NMOSTotalBit1M§StructureOr- N
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.l>e,)Ol§2. STATIC RAMStruc- Total
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.....U)(Xl3. MASK ROM§Or- NumtureB
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~~oNMOSTotaLBit256k512k§StructureO
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m APPLICATIONS64K BIT DYNAMIC RAM A
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• APPLICATIONS •• -----------
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_APPLICATIONS __ -------------_____
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CMOS RAM BATTERY BACK-UPA practical
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MASK ROM KANJI GENERATION MEMORYDES
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_APPLICATIONS _a_------____________
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• APPLICATIONS ... --------------
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