MEMORY DATABOOK - Al Kossow's Bitsavers

------------------11. DYNAMIC RAM· MSM411 001 RS •AC CHARACTERISTICS(Recommended operating conditions unless otherwise noded.)MSM411001 MSM411001Parameter Symbol Unit 10 12 NotesMin Max Min MaxRefresh period tREF ms 8 8Random read or write cycle time tRC ns 200 230Read-write cycle time tRWC ns 235 255Access time from RAS tRAC ns 100 120 4,6Access time from CAS tCAC ns 50 60 5,6Output buffer turn-off delay tOFF ns 0 25 0 25Transition time tT ns 3 50 3 50RAS precharge time tRP ns 90 100RAS pulse width tRAS ns 100 10l's 120 10l'sRAS hold time tRSH ns 50 60CAS pulse width tCAS ns 50 10l'S 60 10 I'SCAS hold time tCSH ns 100 120RAS to CAS delay time tRCO ns 25 50 25 60 7CAS to RAS set-up time tCRS ns 15 20Row address set-up time tASR ns 0 0Row address hold time tRAH ns 15 15Column address set-up time tASC ns 0 0Column address hold time tCAH ns 20 20Column address hold time from RAS tAR ns 70 80Read command set-up time tRCS ns 0 0Read command hold time referenced to CAS tRCH ns 0 0Read command hold time referenced to RAS tRRH ns 20 20Write command hold time from RAS tWCR ns 80 951Write command set-up time twcs ns 0 0 8Write command pulse width twp ns 30 35Write command hold time tWCH ns 30 35Write command to RAS lead time tRWL ns 40 40Write command to CAS lead time tCWL ns 40 40Oata-in set-up time tos ns 0 0Oata-in hold time tOH ns 30 35Oata-in hold time from RAS tOHR ns 80 95CAS to WE delay time tcwo ns 40 40 8RAS to WE delay time tRWO ns 90 100Refresh set-up time for CAS referenced to RAS tFCS ns 20 25Refresh hold time for CAS referenced to RA::; tFCH ns 30 30CAS precharge time (C before R cycle) tCPR ns 20 25RAS precharge to CAS active time tRPC ns 20 20Nibble mode read/write cycle time tNC ns 65 70 9Nibble mode read-write cycle time tNRWC ns 65 70 9Nibble mode access time tNCAC ns 30 35 9Nibble mode CAS pulse width tNCAS ns 30 35 9207