MEMORY DATABOOK - Al Kossow's Bitsavers

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---------------------------------------I.EEPROM·MSM2816ARS.FUNCTIONAL BLOCK DIAGRAMx buffers,latch anddecoder16,384 bitE' PROM arrayA. 'VA,.AddressinputsY buffers,latch anddecoderI/O buffersand latchControllogicI/O. 'V I/O,Data inputs/outputsMODE SELECTION~ O"l: WEModeI/OPowerV IH X XStandbyHigh ZStandbyV IL VIL V IHV IL V IH LSV IL V IH V IHRead5V byte writeProgram (READ ANDWRITE) inhibitDOUTDINHigh ZActiveActiveActiveV IL V IH VppV IL V IH VppV IL V OE VppByte eraseByte writeChip eraseDIN=VIHDINDIN-VIHActiveActiveActiveHigh-voltage programmingmodeNote: X;Don'tcare(VIHorVIL)421
.EEPROM·MSM2816ARS.I--------------------------------------DEVICE OPERATIONRead ModeData in the MSM2816A can be read by applying a TTLhigh signal to WE:, and a low signal to C'E and ~. Thedata for tAA time from address inputs; for tCE timefrom a low on DE, and for tOE from a low on 01:,whichever occurs last, is valid. Once a TTL high signalis applied to DE or CE, the I/O pins are in a high impedancestate to prevent data bus contention withinthe system.Write ModeThe MSM2816A has two write modes:• 5V programming mode (standard)In this mode, a write cycle is initiated by applyinga TTL low signal to WE and CE and a high signal toDE. Address inputs are latched on the trailing edgeof WE or C'E whichever is the slower. Data on theI/O pins is latched on the leading edge of WE orCEo The address and data are latched for 200 nsby using TTL level write signal. Once the data islatched, the MSM2816A erases the byte that is selectedwithin 10 ms automatically and writes new datato it.In the meantime, the system is available to other tasks,but the I/O pins are in a high impedance state whilewriting is in progress. The system recognizes the completionof a write operation by comparing the datalast written against previous data. When this methodof verification is to be used, the output may bepulled up to V CC with a resistor so that all read dataprior to the completion of the write operation shouldbe '1'.• High-voltage programming modeWhile the MSM2816A merely requires a single 5Vpower supply to write, it is also operable in the highvoltagemode to remain compatible with existingE2 PROMs. In this mode, all selected bytes must beerased before new data can be written to them. Thebyte erase operation can be initiated the same way asa high-voltage write operation, except that a TTLhigh level is applied to every I/O pin. To be able towrite new data to a byte in the high-voltage mode, itis necessary to apply a TTL high level to DE and aTTL low level to CE before WE is raised to a voltage(Vpp) between 12V and 22V. The MSM2816A hasno constrain on Vpp rising or falling edges, and datapresent on the I/O pins is written to memory withina maximum period of 9 ms from address inputs.High-voltage Chip EraseThe data in all memory cells is erased within 9 ms whenDE is initially raised to 12-22V, then WE is raised to12-22V while applying a TTL high signal to every I/Opin. After the erasure, all data bits in the device are setto TTL high level (logic '1 ').Standby ModeThe 2816A has a standby mode which reduces theactive power dissipation by about 55% when a TTLhigh level is applied to CEo• Number of repetitive write cyclesThe MSM2816A is designed to support applicationsrequiring up to 10,000 write cycles per byte.• Inadvertent write protectionThe MSM2816A has following four functions toprevent inadvert write during power up, power down,and during line noise occurrence.(1) VCC level detectionWriting to the device· is automatically inhibitedwhen VCC has fallen to 3.0V or below.(2) Time delayAny write operation is automatically inhibitedwhile VCC is 5-20 ms in the Vwl state when theMSM2816A is being powered up.This features allows sufficient time for the systemto apply a TT L high signal to WE or C E beforewrite occurs.(3) OE gatingThe MSM2816A inhibits all write operations whileDE is low.(4) WE noise protectionNo write cycle may be initiated by write pulsesfor 20 ns or shorter.ELECTRICAL CHARACTERISTICS• Absolute Maximum Ratings (Note 1)Ambient temperature under bias ...Storage temperature .................. .Voltage on any pin with respect to ground (Note 2) .DC output current ............ .DE and WE voltage in high-voltage mode ...... .-10°C "v +85°C-65°C "v +125°C-0.5V"v +6V5mA22.5VNotes:1. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to thedevice. This is a stress rating only and functional operation of the device at these or other conditionsabove those indicated in the operational sections of this specification is not implied. Exposure to absolutemaximum rating conditions for extended periods may affect device reliability.2. The device incorporates a special circuit to sat"eguard it against electrostatic damage. For added assurance,avoid operating the device above the maximum ratings indicated.422
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MEMORYDATABOOK1986
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CONTENTSo IC MEMORY LINE-UP AND TYP
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MSM28201 AASMSM53256RSMSK531000RS
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IC MEMORY LINE-UP AND TYPICALCHARAC
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---------.IC MEMORY LINE-UP AND TYP
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---------I.IC MEMORY LINE-UP AND TY
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----------_IC MEMORY LINE-UP AND TY
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PACKAGINGPACKAGESNo. RS GS JS US YS
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------------------.PACKAGING ••
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oIIIRELIABILITY INFORMATION .......
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I\JOl~rt-ProcessmentAcceptanceof or
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• RELIABILITY INFORMATION ••
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• RELIABILITY INFORMATION ••
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• RELIABILITY INFORMATION .'-----
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D MOS MEMORY HANDLING PRECAUTIONS .
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D EPROM WRITING AND ERASURE .......
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• EPROM WRITING AND ERASURE •
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MASK ROM CUSTOMER PROGRAMSPECIFICAT
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DD MASK ROM DEVELOPMENT FLOWCHART..
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D TERMINOLOGY AND SYMBOLS .........
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.TERMINOLOGYANDSyMBOLS.------------
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• TERMINOLOGY AND SYMBOLS ... ---
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_TERMINOLOGY AND SYMBOLS _._-------
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MOSDYNAMICRAMS
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----------------__ DYNAMIC RAM· MS
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_________________ • DYNAMIC RAM·
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--------------------11. DYNAMIC RAM
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----------------... DYNAMIC RAM . M
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----------------__• DYNAMIC RAM'
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• DYNAMIC RAM . MSM3764AS/RS .1--
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• DYNAMIC RAM· MSM3764AS/RS •
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OKI semiconductorMSM3764 AAS/RS65,5
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• DYNAMIC RAM· MSM3764AAS/RS •
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• DYNAMIC RAM· MSM3764AAS/RS .--
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• DYNAMIC RAM· MSM3764AAS/RS .--
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OKI semiconductorMSM41256AS/RS26214
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• DYNAMIC RAM· MSM41256AS/RS .--
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• DYNAMIC RAM· MSM41256AS/RS .1-
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• DYNAMIC RAM· MSM41256AS/RS .-.
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OKI semiconductorMSM41256JS262144-B
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• DYNAMIC RAM·MSM41256JS ••
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_ DYNAMIC RAM· MSM41256JS _...._--
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• DYNAMIC RAM ·MSM41256JS .I----
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• DYNAMIC RAM· MSM41256JS ••
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OKI semiconductorMSM41 256AAS/RS262
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• DYNAMIC RAM· MSM41256AAS/RS .-
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• DYNAMIC RAM· MSM41256AAS/RS .1
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• DYNAMIC RAM· MSM41256AAS/RS .,
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• DYNAMIC RAM· MSM41256AAS/RS .1
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.DYNAMICRAM·MSM41257AAS/RS.-------
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• DYNAMIC RAM· MSM41257 AAS/RS .
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• DYNAMIC RAM ·MSM41257AAS/RS .-
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• DYNAMIC RAM· MSM41257 AAS/RS .
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• DYNAMIC RAM· MSM41464RS ••
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• DYNAMIC RAM· MSM41464RS ... --
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• DYNAMIC RAM· MSM41464RS .-----
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• DYNAMIC RAM· MSM41464RS ••
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.OVNAMICRAM·MSM41464RS.-----------
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• DYNAMIC RAM ·MSM41464RS .1----
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• DYNAMIC RAM' MSM41464RS .------
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.---=D=-._K __ I __s_._rn-'----l_c_
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• DYNAMIC RAM· MSM414256RS .----
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• DYNAMIC RAM • MSM414256RS .--
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• DYNAMIC RAM 'MSM414256RS .-----
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• DYNAMIC RAM . MSM414256RS .1---
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• DYNAMIC RAM . MSM414256RS .1---
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• DYNAMIC RAM· MSM414256RS •
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_ DYNAMIC RAM· MSM411 OOORS ___ --
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• DYNAMIC RAM· MSM411 OOORS •
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• DYNAMIC RAM· MSM411 OOORS ...
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OKI semiconductorMSM411 001 RS10485
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• DYNAMIC RAM· MSM411 001 RS .--
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• DYNAMIC RAM· MSM411001 RS •
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• DYNAMIC RAM· MSM411 001 RS .--
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_ DYNAMIC RAM· MSM411 001 RS ___ -
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• DYNAMIC RAM' MSM411 001 RS •
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• DYNAMIC RAM· MSM411 001 RS .1-
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O __ K __ I __ seMSM514257RS__ rn_I
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• DYNAMIC RAM· MSM37S64ARS/37S64
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_ DYNAMIC RAM· MSM37S64ARS/37S64RS
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_O_K __ I __se_rn_I_C_O_nc:I_U_c_.o
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• DYNAMIC RAM· MSC2301 YS9/KS9 .
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• DYNAMIC RAM· MSC2301 YS9/KS9
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• DYNAMIC RAM· MSC2304YSS/KSS .1
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.DYNAMICRAM·MSC2304YSS/KSS.-------
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• DYNAMIC RAM· MSC2304YSS/KSS .1
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_______________.... DYNAMIC RAM· M
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----------------1. DYNAMIC RAM· MS
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----------------. DYNAMIC RAM· MSC
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---------------1. DYNAMIC RAM· MSC
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-----------------11. DYNAMIC RAM·
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MOSSTATICRAMS
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------------------1. STATIC RAM ·M
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-------------------1. STATIC RAM·
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OKI semiconductorMSM2128RS2 KW x 8
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-------------------11. STATIC RAM
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-------------------11. STATIC RAM
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_______.,..--__________-11. STATIC
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-------------------. STATIC RAM 'MS
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OKI semiconductorMSM5128 - 20GSK204
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-----------------. STATIC RAM· MSM
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OKI semiconductorMSM5126RS2048-WORD
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-------------------. STATIC RAM 'MS
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-------------------. STATIC RAM ·M
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-----------------11. STATIC RAM· M
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-----------------1. STATIC RAM· MS
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-----------------1. STATIC RAM· MS
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-----------------... STATIC RAM ·M
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o __ K__ I __MSM5188USse_rn_IC_O_nc
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--------------------11. STATIC RAM
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___________________ • STATIC RAM
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-----------------. STATIC RAM' MSM5
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-----------------. STATIC RAM ·MSM
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-----------------. STATIC RAM' MSM5
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----------------1. STATIC RAM· MSM
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-----------------I.STATICRAM·MSM51
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MOSMASKROMS
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------------------___ • MASK ROM
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-----------------__._ MASK ROM ·MS
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-----------------____ MASK ROM . MS
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OKI semiconductorMSM28201AAS1M BIT
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-----------------____ MASK ROM . MS
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OKI semiconductorMSM2764AS8192 x 8
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.EPROM·MSM2764AS •• ----------
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Page 379 and 380: OKI semiconductorMSM27128AS16384 x
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Page 395 and 396: .EPROM·MSM27512AS.--------~-------
Page 397 and 398: .EPROM·MSM271000AS •.-----------
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Page 403 and 404: .EPROM·MSM271024AS.---------------
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Page 427: OKI semiconductorMSM2816ARS2K x 8 B
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Page 437 and 438: IIi) CROSS REFERENCE LIST1. DYNAMIC
Page 439 and 440: ....Co)I\JStructureTotalBit§ori_\
Page 441 and 442: ~c.J~NMOSTotalBit1M§StructureOr- N
Page 443 and 444: .l>e,)Ol§2. STATIC RAMStruc- Total
Page 445 and 446: .....U)(Xl3. MASK ROM§Or- NumtureB
Page 447 and 448: ~~oNMOSTotaLBit256k512k§StructureO
Page 451 and 452: m APPLICATIONS64K BIT DYNAMIC RAM A
Page 453 and 454: • APPLICATIONS •• -----------
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Page 461 and 462: CMOS RAM BATTERY BACK-UPA practical
Page 465 and 466: MASK ROM KANJI GENERATION MEMORYDES
Page 467 and 468: _APPLICATIONS _a_------____________
Page 471 and 472: • APPLICATIONS ... --------------
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