MEMORY DATABOOK - Al Kossow's Bitsavers

O __ K __ I __ seMSM514257RS__ rn_IC_O_nc:I __ U_C_._or ______ ~262,144-WORD x 4-BIT DYNAMIC RAM GENERAL DESCRIPTIONThe MSM514257RS is a new generation dynamic RAM organized as 262,144 words by 4 bits.The technology used to fabricate the MSM514257RS is OKl's silicon gate CMOS processtechnology. The device operates from a single +5V power supply. Its I/O pins are TTL compatible.FEATURES• Silicon gate, N-well CMOS, 1 -transistormemory cell• 262,144 words by 4 bits• Standard 20-pin plastic DIP• Family organizationFamilyMSM514257-10RSMSM514257-12RSAccess Time(MAX)100 ns120 nsCycle Time(MIN)Operating(MAX)190 ns 413mW220 ns 385mWPower DissipationStandby(MAX)11 mW• Single +5V supply, ±1 0% tolerance• Input: TTL compatible, address input, datainput latch• Output: TTL compatible, tristate, non latch• Refresh: 512 cycles/8 msFUNCTIONAL BLOCK DIAGRAM• Output impedance controllable through earlywrite and OE operations• Static column mode, read modify writecapability• RAS only refresh capability• Built-in VBB generator circuitDColumn 1------........ 1AddressBuffers 1---------/L....r---......I--~--WE.~~~r:t-- csAo-A,RowAddressRowBuffersDecoders----y--'-_____ --'VCC vss-OnchipVBBMemoryCellsDQ,-DQ,220