MEMORY DATABOOK - Al Kossow's Bitsavers

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----------------..... DYNAMIC RAM· MSM3764AAS/RS •PAGE MODE WRITE CYCLE~----------tRAS----------~Addresses vVIH- ,/N11O/v"W"-T1IL-~~·~~~~·~~r~~~~4~~WEV I H - ,7777 Im'77"J':mIllVIL-~~~~~~~~""~~~I'"'rn>~~~~~~~~~""~~~~""~~"H", "L" = Don't CarePAGE MODE, READ·MODIFY·WRITE CYCLEAddresses V I HVIL---OPEN---
• DYNAMIC RAM· MSM3764AAS/RS •• ----------------HIDDEN REFRESHAddressesDOUTv::W~.RA~~ ______ ---T'I@'I(,'lIAVOL---OPEN ~ Valid Data 5-~ "H", "L" = Don't CareDESCRIPTIONAddress Inputs:A total of sixteen binary input address bits are requiredto decode any 1 of 65536 storage cell locations withinthe MSM3764A. Eight row·address bits are establ ishedon the input pins (AD ~A,) and latched with the RowAddress Strobe (FiASl. The eight column-addressbits are established on the input pins and latched withthe Column Address Strobe (CAS). <strong>Al</strong>l input addressesmust be stable on or before the falling edge of RAS.CAS is internally inhibited (or "gated") by RAS topermit triggering of CAS as soon as the Row AddressHold Time (tRAH) specification has been satisfied andthe address inputs have been changed from row-addressesto column-addresses.Write Enable:The read mode or write mode is selected with the WEinput. A logic high (1) on WE dictates read mode;logic low (0) dictates write mode. Data input is disabledwhen read mode is selected.Data Input:Data is written into the MSM3764A during a write orread-write cycle. The last falling edge of WE or CAS isa strobe for the Data In (DIN) register. In a writecycle, if WE is brought low (write mode) before CAS,DIN is strobed by CAS, and the set-up and hold timesare referenced to CAS. I n a read-write cycle, WE willbe delayed until CAS has made its negative transistion.Thus DIN is strobed by WE, and set-up and hold timesare referenced to WE.Data Output:The output buffer is three-state TTL compatible witha fan-out of two standard TTL loads. Data-out is thesame polarity as data-in. The output is in a high impedancestate until CAS is brought low. In a read cycle,or read-write cycle, the output is valid after tRAC fromtransition of RAS when tRCD (max.) is satisfied, orafter tCAC from transition of CAS when the transitionoccurs after tRCD (max.l. Data remain valid until CASis returned to a high level. In a write cycle the identicalsequence occurs, but data is not valid.Page Mode:Page-mode operation permits strobing the row-addressinto the MSM3764A while maintaining RAS at a logiclow (0) throughout all successive memory operations inwhich the row-address doesn't change. Thus the powerdissipated by the negative going edge of RAS is saved.Further, access and cycle times are decreased becausethe time normally required to strobe a new row-addressis eliminated.Refresh:Refresh of the dynamic memory cells is accompl ishedby performing a memory cycle at each of the 128 rowaddresses(Ao -A.) at least every two milliseconds.During refresh, either VIL or VIH is permitted for A,.RAS only refresh avoids any output during refreshbecause the output buffer is in the high impedancestate unless CAS is brought low. Strobing each of 128row-addresses with RAS will cause all bits in each rwoto be refreshed. Further RAS-only refresh results in asubstantial reduction in power dissipation.Hidden Refresh:RAS ONLY REFRESH CYCLE may take place whilemaintaining valid output data. This feature is referredto as Hidden Refresh.Hidden Refresh is performed by holding CAS as V I Lfrom a previous memory read cycle.100
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MEMORYDATABOOK1986
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CONTENTSo IC MEMORY LINE-UP AND TYP
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MSM28201 AASMSM53256RSMSK531000RS
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IC MEMORY LINE-UP AND TYPICALCHARAC
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---------.IC MEMORY LINE-UP AND TYP
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---------I.IC MEMORY LINE-UP AND TY
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----------_IC MEMORY LINE-UP AND TY
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PACKAGINGPACKAGESNo. RS GS JS US YS
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------------------.PACKAGING ••
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oIIIRELIABILITY INFORMATION .......
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I\JOl~rt-ProcessmentAcceptanceof or
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• RELIABILITY INFORMATION ••
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• RELIABILITY INFORMATION ••
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• RELIABILITY INFORMATION .'-----
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D MOS MEMORY HANDLING PRECAUTIONS .
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D EPROM WRITING AND ERASURE .......
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• EPROM WRITING AND ERASURE •
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MASK ROM CUSTOMER PROGRAMSPECIFICAT
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DD MASK ROM DEVELOPMENT FLOWCHART..
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• DYNAMIC RAM· MSM41257 AAS/RS .
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• DYNAMIC RAM ·MSM41257AAS/RS .-
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• DYNAMIC RAM· MSM41257 AAS/RS .
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• DYNAMIC RAM· MSM41257AAS/RS .-
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• DYNAMIC RAM· MSM41464RS ••
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• DYNAMIC RAM· MSM41464RS ... --
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• DYNAMIC RAM· MSM41464RS .-----
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• DYNAMIC RAM· MSM41464RS ••
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.OVNAMICRAM·MSM41464RS.-----------
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• DYNAMIC RAM ·MSM41464RS .1----
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• DYNAMIC RAM' MSM41464RS .------
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.---=D=-._K __ I __s_._rn-'----l_c_
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• DYNAMIC RAM· MSM414256RS .----
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• DYNAMIC RAM • MSM414256RS .--
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• DYNAMIC RAM 'MSM414256RS .-----
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• DYNAMIC RAM . MSM414256RS .1---
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• DYNAMIC RAM . MSM414256RS .1---
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• DYNAMIC RAM· MSM414256RS •
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_ DYNAMIC RAM· MSM411 OOORS ___ --
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• DYNAMIC RAM· MSM411 OOORS •
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• DYNAMIC RAM· MSM411 OOORS ...
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OKI semiconductorMSM411 001 RS10485
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• DYNAMIC RAM· MSM411 001 RS .--
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• DYNAMIC RAM· MSM411001 RS •
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• DYNAMIC RAM· MSM411 001 RS .--
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_ DYNAMIC RAM· MSM411 001 RS ___ -
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• DYNAMIC RAM' MSM411 001 RS •
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• DYNAMIC RAM· MSM411 001 RS .1-
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OKI semiconductor ~----------------
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O __ K __ I __ seMSM514257RS__ rn_I
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• DYNAMIC RAM· MSM37S64ARS/37S64
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_ DYNAMIC RAM· MSM37S64ARS/37S64RS
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_O_K __ I __se_rn_I_C_O_nc:I_U_c_.o
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• DYNAMIC RAM· MSC2301 YS9/KS9 .
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_ DYNAMIC RAM· MSC2301 YS9/KS9 ---
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• DYNAMIC RAM· MSC2301 YS9/KS9
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• DYNAMIC RAM· MSC2304YSS/KSS .1
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.DYNAMICRAM·MSC2304YSS/KSS.-------
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• DYNAMIC RAM· MSC2304YSS/KSS .1
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_______________.... DYNAMIC RAM· M
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---------------..... DYNAMIC RAM·
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----------------1. DYNAMIC RAM· MS
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----------------. DYNAMIC RAM· MSC
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---------------1. DYNAMIC RAM· MSC
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-----------------11. DYNAMIC RAM·
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MOSSTATICRAMS
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------------------1. STATIC RAM ·M
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-------------------1. STATIC RAM·
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OKI semiconductorMSM2128RS2 KW x 8
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-------------------11. STATIC RAM
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-------------------11. STATIC RAM
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_______.,..--__________-11. STATIC
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-------------------. STATIC RAM 'MS
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OKI semiconductorMSM5128 - 20GSK204
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-----------------. STATIC RAM· MSM
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-----------------. STATIC RAM· MSM
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OKI semiconductorMSM5126RS2048-WORD
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-------------------. STATIC RAM 'MS
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-------------------. STATIC RAM ·M
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------------------. STATIC RAM· MS
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------------------. STATIC RAM· MS
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-----------------11. STATIC RAM· M
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-----------------1. STATIC RAM· MS
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-----------------1. STATIC RAM· MS
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-----------------... STATIC RAM ·M
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o __ K__ I __MSM5188USse_rn_IC_O_nc
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--------------------11. STATIC RAM
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___________________ • STATIC RAM
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-----------------. STATIC RAM' MSM5
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-----------------. STATIC RAM ·MSM
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-----------------. STATIC RAM' MSM5
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----------------1. STATIC RAM· MSM
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-----------------I.STATICRAM·MSM51
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----------------... STATIC RAM· MS
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MOSMASKROMS
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------------------___ • MASK ROM
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-----------------__._ MASK ROM ·MS
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-----------------_____ MASK ROM· M
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-----------------____ MASK ROM . MS
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-----------------_____ MASK ROM· M
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OKI semiconductorMSM28201AAS1M BIT
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-----------------____ MASK ROM . MS
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OKI semiconductorMSM2764AS8192 x 8
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.EPROM·MSM2764AS •• ----------
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.EPROM·MSM2764AS.I----------------
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OKI semiconductorMSM27128AS16384 x
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.EPROM·MSM27128AS •• ---------
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.EPROM·MSM27128AS •• ---------
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.EPROM·MSM27256AS •• ---------
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.EPROM·MSM27256AS •• ---------
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.EPROM·MSM27512AS •• ---------
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.EPROM·MSM27512AS.--------~-------
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.EPROM·MSM271000AS •.-----------
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.EPROM·MSM271000AS •• --------
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.EPROM·MSM271000AS •• --------
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.EPROM·MSM271024AS.---------------
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.EPROM·MSM271024AS.I--------------
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.EPROM·MSM271024AS •• --------
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.EPROM·MSM27C64AS •• ---------
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_EPROM·MSM27C64AS ___ ------------
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_EPROM·MSM27C64AS_._--------------
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.EPROM·MSM27C128AS .--------------
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.EPROM·MSM27C128AS.I--------------
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.EPROM·MSM27C128AS •• --------
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_EPROM·MSM27C1024AS ___ ----------
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.EPROM·MSM27C1024AS.--------------
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_EPROM·MSM27C1024AS-.-------------
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OKI semiconductorMSM2816ARS2K x 8 B
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.EEPROM·MSM2816ARS.I--------------
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.EEPROM·MSM2816ARS.---------------
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·EEPROM·MSM2816ARS.I-------------
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IIi) CROSS REFERENCE LIST1. DYNAMIC
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....Co)I\JStructureTotalBit§ori_\
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~c.J~NMOSTotalBit1M§StructureOr- N
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.l>e,)Ol§2. STATIC RAMStruc- Total
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.....U)(Xl3. MASK ROM§Or- NumtureB
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~~oNMOSTotaLBit256k512k§StructureO
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m APPLICATIONS64K BIT DYNAMIC RAM A
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• APPLICATIONS •• -----------
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_APPLICATIONS __ -------------_____
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CMOS RAM BATTERY BACK-UPA practical
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MASK ROM KANJI GENERATION MEMORYDES
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_APPLICATIONS _a_------____________
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• APPLICATIONS ... --------------
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