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Violation in Mixing

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2.2 The BABAR detector. 55<br />

two outer layers, the angle between the strips on the two sides of the trapezoidal detectors is approximately<br />

� Æ and the � strips are tapered.<br />

The <strong>in</strong>ner modules are tilted <strong>in</strong> � by � Æ , allow<strong>in</strong>g an overlap region between adjacent modules: this provide<br />

full azimuthal coverage and is convenient for alignment. The outer modules are not tilted, but are divided<br />

<strong>in</strong>to sub-layers and placed at slightly different radii (see left draw<strong>in</strong>g <strong>in</strong> fig. (2-4)).<br />

The total silicon area <strong>in</strong> the ËÎÌ is ��� Ñ and the number of readout channels is about � . The<br />

geometrical acceptance of ËÎÌ is � of the solid angle <strong>in</strong> the c.m. system and typically � are used <strong>in</strong><br />

charged particle track<strong>in</strong>g.<br />

The Þ-side strips are connected to the read-out electronics with flexible Upilex fanout circuits glued to the<br />

<strong>in</strong>ner faces of half-modules: as a matter of fact, each module is divided <strong>in</strong>to two electrically separated<br />

forward and backward half-modules. The fanout circuits consist of conductive traces on a th<strong>in</strong> flexible<br />

<strong>in</strong>sulator (copper traces on Kapton): the traces are wire-bonded to the end of the strips.<br />

In the two outer layers, <strong>in</strong> each module the number of Þ strips exceeds the number of read-out channels,<br />

so that a fraction of the strips is “ganged”, i.e., two strips are connected to the same read-out channel.<br />

The “gang<strong>in</strong>g” is performed by the fanout circuits. The length of a Þ strip is about � �Ñ (case of no<br />

gang<strong>in</strong>g) or �Ñ (case of two strip connected): the gang<strong>in</strong>g <strong>in</strong>troduces an ambiguity on the Þ coord<strong>in</strong>ate<br />

measurement, which must be resolved by the pattern recognition algorithms. The � strips are daisy-cha<strong>in</strong>ed<br />

between detectors, result<strong>in</strong>g <strong>in</strong> a total strip length of up to � Ñ. Also, for the �-side, a short fanout<br />

extension is needed to connect the ends of the strips to the read-out electronics.<br />

Table 2-3. Parameters of the ËÎÌ layout: these characteristics are shown for each layer.<br />

st nd rd �th �th<br />

layer layer layer layer layer<br />

radius (ÑÑ) 32 40 54 91-127 114-144<br />

modules/layer 6 6 6 16 18<br />

wafers/module 4 4 6 7 8<br />

read-out pitch (�Ñ)<br />

� 50-100 55-110 55-110 100 100<br />

Þ 100 100 100 210 210<br />

The signals from the read-out strips are processed us<strong>in</strong>g a new technique, br<strong>in</strong>g<strong>in</strong>g <strong>in</strong> several advantages.<br />

After amplification and shap<strong>in</strong>g, the signals are compared to a preset threshold and the time they exceed<br />

this threshold (time over threshold, or ToT) is measured. This time <strong>in</strong>terval is related to the charge <strong>in</strong>duced<br />

<strong>in</strong> the strip by the charged particle cross<strong>in</strong>g it. Unlike the traditional peak-amplitude measurement <strong>in</strong> the<br />

shaper output, the ToT has the advantage of an approximately logarithmic relation of the time <strong>in</strong>terval to<br />

the charge signal. This compresses the active dynamic range of the signal, ensur<strong>in</strong>g a good sensitivity <strong>in</strong><br />

the lower range. When a particle crosses a silicon detector a cluster of adjo<strong>in</strong><strong>in</strong>g strips produc<strong>in</strong>g a signal<br />

THE BABAR EXPERIMENT

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