PCT/2001/45 - World Intellectual Property Organization
PCT/2001/45 - World Intellectual Property Organization
PCT/2001/45 - World Intellectual Property Organization
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<strong>45</strong>/<strong>2001</strong><br />
20344 <strong>PCT</strong> Gazette - Section I - Gazette du <strong>PCT</strong> 8 Nov/nov <strong>2001</strong><br />
(81) KR US.<br />
(84) EP (AT BE CH CY DE DK ES FI FR GB GR<br />
IE IT LU MC NL PT SE TR).<br />
(51) 7 H01L 21/68, 21/66, H05B 3/10, 3/20, 3/68,<br />
3/06, 3/16<br />
(11) WO 01/84623<br />
(21) <strong>PCT</strong>/JP01/03680<br />
(13) A1<br />
(22) 27 Apr/avr <strong>2001</strong> (27.04.<strong>2001</strong>)<br />
(25) ja (26) ja<br />
(30) 2000-132123 1 May/mai 2000<br />
(01.05.2000)<br />
JP<br />
(30) 2000-202509 4 Jul/juil 2000<br />
(04.07.2000)<br />
JP<br />
(30) <strong>2001</strong>-48977 23 Feb/fév <strong>2001</strong><br />
(23.02.<strong>2001</strong>)<br />
JP<br />
(43) 8 Nov/nov <strong>2001</strong> (08.11.<strong>2001</strong>)<br />
(54) HOT PLATE UNIT AND SEMICON-<br />
DUCTOR MANUFACTURING AND<br />
INSPECTING DEVICE<br />
UNITE DE PLAQUE CHAUFFANTE<br />
ET DISPOSITIF DE PRODUCTION ET<br />
DE CONTROLE DE SEMI-CONDUC-<br />
TEURS<br />
(71) IBIDEN CO., LTD. [JP/JP]; 1, Kandacho<br />
2-chome, Ogaki-shi, Gifu 503-0917 (JP).<br />
(for all designated States except / pour tous<br />
les États désignés sauf US)<br />
(72, 75) HIRAMATSU, Yasuji [JP/JP]; c/o<br />
IBIDEN CO., LTD., 1-1, Kitagata, Ibigawacho,<br />
Ibi-gun, Gifu 501-0695 (JP). ITO,<br />
Yasutaka [JP/JP]; c/o IBIDEN CO., LTD.,<br />
1-1, Kitagata, Ibigawacho, Ibi-gun, Gifu<br />
501-0695 (JP).<br />
(74) YASUTOMI, Yasuo et al. / etc.; Chuo<br />
BLDG., 4-20, Nishinakajima 5-chome, Yodogawa-ku,<br />
Osaka-shi, Osaka 532-0011 (JP).<br />
(81) US.<br />
(84) EP (AT BE CH CY DE DK ES FI FR GB GR<br />
IE IT LU MC NL PT SE TR).<br />
(51) 7 H01L 21/68<br />
(11) WO 01/84624 (13) A2<br />
(21) <strong>PCT</strong>/US01/13405<br />
(22) 25 Apr/avr <strong>2001</strong> (25.04.<strong>2001</strong>)<br />
(25) en (26) en<br />
(30) 09/561,585 28 Apr/avr 2000 US<br />
(28.04.2000)<br />
(43) 8 Nov/nov <strong>2001</strong> (08.11.<strong>2001</strong>)<br />
(54) SEMICONDUCTOR LIFT PIN FOR<br />
DECHUCKING SUBSTRATES<br />
BROCHE DE RELEVAGE DE SEMI-<br />
CONDUCTEUR POUR LE DESSER-<br />
RAGE DES SUBSTRATS<br />
(71) APPLIED MATERIALS, INC. [US/US];<br />
P.O. Box <strong>45</strong>0 A, Santa Clara, CA 95052 (US).<br />
(72) LOEWENHARDT, Peter, K.; 1862 Rosswood<br />
Drive, San Jose, CA 95124 (US).<br />
HANAWA, Hiroji; 696 Spruce Drive, Sunnyvale,<br />
CA 94086 (US). GRISTI, Raymond;<br />
4110 Wingham Place, San Jose, CA 95135<br />
(US). YIN, Gerald, Zheyao; 5511 Country<br />
Club Drive, San Jose, CA 95138 (US). YE,<br />
Yan; 13271 Via Arriba Drive, Saratoga, CA<br />
95070 (US).<br />
(74) BERNADICOU, Michael, A. et al. / etc.;<br />
Blakely, Sokoloff, Taylor & Zafman LLP, 7th<br />
Floor, 12400 Wilshire Boulevard, Los Angeles,<br />
CA 90025 (US).<br />
(81) JP.<br />
(51) 7 H01L 21/762, 21/8247<br />
(11) WO 01/84625 (13) A1<br />
(21) <strong>PCT</strong>/US01/10922<br />
(22) 3 Apr/avr <strong>2001</strong> (03.04.<strong>2001</strong>)<br />
(25) en (26) en<br />
(30) 09/563,179 2 May/mai 2000 US<br />
(02.05.2000)<br />
(43) 8 Nov/nov <strong>2001</strong> (08.11.<strong>2001</strong>)<br />
(54) FLASH MEMORY ARRAY AND A<br />
METHOD AND SYSTEM OF FABRI-<br />
CATION THEREOF<br />
TABLEAU DE MEMOIRE FLASH, PRO-<br />
CEDE ET SYSTEME DE FABRICATION<br />
CORRESPONDANTS<br />
(71) ADVANCED MICRO DEVICES, INC.<br />
[US/US]; One AMD Place, Mail Stop 68,<br />
Sunnyvale, CA 94088-3<strong>45</strong>3 (US).<br />
(72) CHAN, Maria, C.; 3427 San Saba Drive,<br />
San Jose, CA 95148 (US). FANG, Hao; 7719<br />
Carriage Circle, Cupertino, CA 95014 (US).<br />
CHANG, Mark, S.; 1881 Farndon Avenue,<br />
Los Altos, CA 94024 (US). TEMPLETON,<br />
Michael; 80 Palmer Lane, Atherton, CA<br />
94027 (US).<br />
(74) RODDY, Richard, J.; Advanced Micro Devices,<br />
Inc., Mail Stop 68, One AMD Place,<br />
Sunnyvale, CA 94088-3<strong>45</strong>3 (US).<br />
(81) AE AG AL AM AT AU AZ BA BB BG BR<br />
BY BZ CA CH CN CO CR CU CZ DE DK<br />
DM DZ EE ES FI GB GD GE GH GM HR<br />
HU ID IL IN IS JP KE KG KP KR KZ LC<br />
LK LR LS LT LU LV MA MD MG MK MN<br />
MW MX MZ NO NZ PL PT RO RU SD SE<br />
SG SI SK SL TJ TM TR TT TZ UA UG UZ<br />
VN YU ZA ZW.<br />
(84) AP (GH GM KE LS MW MZ SD SL SZ TZ<br />
UG ZW); EA (AM AZ BY KG KZ MD RU<br />
TJ TM); EP (AT BE CH CY DE DK ES FI<br />
FR GB GR IE IT LU MC NL PT SE TR); OA<br />
(BF BJ CF CG CI CM GA GN GW ML MR<br />
NE SN TD TG).<br />
Published / Publiée :(c)<br />
(51) 7 H01L 21/768<br />
(11) WO 01/84626<br />
(21) <strong>PCT</strong>/JP01/03618<br />
(13) A1<br />
(22) 26 Apr/avr <strong>2001</strong> (26.04.<strong>2001</strong>)<br />
(25) en (26) en<br />
(30) 2000-131378 28 Apr/avr 2000<br />
(28.04.2000)<br />
JP<br />
(43) 8 Nov/nov <strong>2001</strong> (08.11.<strong>2001</strong>)<br />
(54) SEMICONDUCTOR DEVICE HAVING<br />
A LOW DIELECTRIC FILM AND FAB-<br />
RICATION PROCESS THEREOF<br />
DISPOSITIF SEMI-CONDUCTEUR<br />
POURVU D’UN FILM FAIBLEMENT<br />
DIELECTRIQUE ET PROCEDE DE FA-<br />
BRICATION CORRESPONDANT<br />
(71) TOKYO ELECTRON LIMITED [JP/JP];<br />
3-6, Akasaka 5-Chome, Minato-Ku, Tokyo<br />
107-8481 (JP).<br />
(for all designated States except / pour tous<br />
les États désignés sauf US)<br />
(72, 75) MAEKAWA, Kaoru [JP/JP]; c/o<br />
TOKYO ELECTRON LIMITED, 650,<br />
Mitsuzawa, Hosaka-Cho, Nirasaki-Shi,<br />
Yamanashi 407-0192 (JP). SUGIURA,<br />
Masahito [JP/JP]; c/o TOKYO ELECTRON<br />
LIMITED, 650, Mitsuzawa, Hosaka-Cho,<br />
Nirasaki-Shi, Yamanashi 407-0192 (JP).<br />
(74) ITOH, Tadahiko; 32nd Floor, Yebisu Garden<br />
Place Tower, 20-3, Ebisu 4-chome,<br />
Shibuya-ku, Tokyo 150-6032 (JP).<br />
(81) CN JP KR US.<br />
(84) EP (AT BE CH CY DE DK ES FI FR GB GR<br />
IE IT LU MC NL PT SE TR).<br />
Published / Publiée :(a)<br />
(51) 7 H01L 21/768, 23/532<br />
(11) WO 01/84627<br />
(21) <strong>PCT</strong>/US01/14225<br />
(13) A2<br />
(22) 2 May/mai <strong>2001</strong> (02.05.<strong>2001</strong>)<br />
(25) en (26) en<br />
(30) 09/563,740 3 May/mai 2000<br />
(03.05.2000)<br />
US<br />
(43) 8 Nov/nov <strong>2001</strong> (08.11.<strong>2001</strong>)<br />
(54) ELECTRONIC DEVICES WITH DIFFU-<br />
SION BARRIER AND PROCESS FOR<br />
MAKING SAME<br />
DISPOSITIFS ELECTRONIQUES COM-<br />
PRENANT UNE BARRIERE DE DIFFU-<br />
SION ET PROCEDE DE FABRICATION<br />
DE CETTE DERNIERE<br />
(71) THE GOVERNMENT OF THE UNITED<br />
STATES OF AMERICA, represented<br />
by THE SECRETARY OF THE NAVY<br />
[US/US]; Naval Surface Warfare Center,<br />
Dahlgren Division,<br />
(US).<br />
Dahlgren, VA 22448<br />
(72) CHU, Tak, Kin; 5838 Conway Road,<br />
Bethesda, MD 20817 (US). SANTIAGO,<br />
Francisco; 5308 Cedar Ridge Drive, Fredericksburg,<br />
VA 22407 (US). BOULAIS,<br />
Kevin, A.; 1315 Wilson Road, Waldorf, MD<br />
20602 (US).<br />
(74) BECHTEL, James, B.; NSWC- Dahlgren<br />
Division, Office of Patent Counsel, Code<br />
CD222, Building 183, Room 015, 17320<br />
Dahlgren Road, Dahlgren, VA 22448-5100<br />
(US).<br />
(84) EP (AT BE CH CY DE DK ES FI FR GB GR<br />
IE IT LU MC NL PT SE TR).<br />
(51) 7 H01L 21/8238, 21/336, 21/311<br />
(11) WO 01/84628<br />
(21) <strong>PCT</strong>/CA01/00639<br />
(13) A1<br />
(22) 3 May/mai <strong>2001</strong> (03.05.<strong>2001</strong>)<br />
(25) en (26) en<br />
(30) 0010650.0 4 May/mai 2000<br />
(04.05.2000)<br />
GB<br />
(43) 8 Nov/nov <strong>2001</strong> (08.11.<strong>2001</strong>)<br />
(54) METHOD OF FORMING SPACERS IN<br />
CMOS DEVICES<br />
REALISATION DE CALES D’ECARTE-<br />
MENT DANS DES CIRCUITS CMOS<br />
(71) MITEL CORPORATION [CA/CA]; 400<br />
March Road, Kanata, Ontario K2K 3H4<br />
(CA).<br />
(72) ROY, Marc; 85 Levis Street, Granby, Quebec<br />
J2N 2G2 (CA). DAIGLE, Manon; 11<br />
Principal Ouest, Farnham, Quebec J2N 1K4