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Tutorials Manual

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Chemkin 4.1.1<br />

Chapter 4: Materials Problems<br />

Figure 4-2<br />

Chlorosilane CVD—Mole Fractions<br />

4.1.2 PSR Analysis of Steady-state Thermal CVD<br />

4.1.2.1 Project Description<br />

This user tutorial presents a model for the CVD of silicon nitride in a steady-state<br />

PSR, using the chemistry set described in Section 4.4.1. The process operates at a<br />

low pressure of 1.8 Torr, and a high temperature of 1440 C, which makes it<br />

reasonable to approximate this system as a PSR. In the PSR model, the CVD reactor<br />

is described using a volume, surface area, and gas flow rate. This is a fixedtemperature<br />

simulation that uses continuations to see the effects of changing the<br />

SiF 4 /NH 3 ratio in the input gas. It also uses sensitivity and rate-of-production (ROP)<br />

options to analyze the chemistry occurring in the system.<br />

4.1.2.2 Project Setup<br />

The project file is called psr__cvd.ckprj. The data files used for this sample are<br />

located in the samples\psr\cvd directory. This reactor diagram contains only one inlet,<br />

one Perfectly Stirred Reactor, and an output Product icon.<br />

The inlet flow rate (11300 sccm, standard cubic centimeters per minute) is input on<br />

the Stream Property Data tab of the Inlet Stream panel. The inlet gas composition is<br />

input on the Species-specific Property tab of the Inlet Stream panel.<br />

© 2007 Reaction Design 118 RD0411-C20-000-001

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