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Chemkin 4.1.1 Chapter 4: Materials Problems 4.1.5.3 Project Results The gas temperatures in Figure 4-15 show that the gas heats up substantially near the deposition surface, with the hot zone expanding with axial distance, as expected. The inlet gas temperature is lower than the upper wall temperature, such that the coolest gas lies in a region near to, but below the top wall. This cooler gas region is reflected in the trichlorosilane mole fraction contours shown in Figure 4-16. Depletion as a result of chemical reaction causes the low SiCl 3 H mole fractions near the lower wall, but thermal diffusion causes the heavier gas to move away from the upper wall. A simulation run without thermal diffusion gives uniform SiCl 3 H mole fractions in the upper part of the reactor. Figure 4-17 shows how the deposition rate of solid silicon varies as a function of axial distance. Initially, the deposition rate is quite high, but it drops rapidly as the SiCl 3 H near the surface is depleted, indicating that the deposition process is transport limited in this system. Figure 4-18 shows gas-phase mole fractions near the lower surface as a function of axial distance. The extent of SiCl 3 H depletion and HCl formation is notably larger than the formation of the other siliconchlorine species (SiCl 2 , SiCl 2 H 2 and SiCl 4 ), which indicates that deposition of solid silicon is the dominant reaction pathway. Figure 4-15 Trichlorosilane CVD—Gas Temperatures vs. Axial and Radial Distance © 2007 Reaction Design 132 RD0411-C20-000-001
Chapter 4: Materials Problems <strong>Tutorials</strong> <strong>Manual</strong> Figure 4-16 Trichlorosilane CVD—Trichlorosilane Mole Fraction Figure 4-17 Trichlorosilane CVD—Silicon Deposition Rate RD0411-C20-000-001 133 © 2007 Reaction Design
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Chemkin 4.1.1 Contents Table of Con
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Chemkin 4.1.1 Tables List of Tables
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Tutorials Manual 4.1.1 Figures List
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List of Figures Tutorials Manual 2-
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Chemkin 4.1.1 1 1 Introduction The
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Chemkin 4.1.1 2 2 Combustion in Gas
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Chapter 2: Combustion in Gas-phase
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