Tutorials Manual
Tutorials Manual
Tutorials Manual
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Chapter 4: Materials Problems<br />
<strong>Tutorials</strong> <strong>Manual</strong><br />
4.1.5 Trichlorosilane CVD in Planar Channel Flow Reactor<br />
4.1.5.1 Project Description<br />
This user tutorial presents a model for the CVD of silicon in a steady-state planar<br />
shear-layer flow reactor using the chemistry set described in Section 4.4.3. The<br />
process operates at atmospheric pressure, and a relatively high temperature<br />
(1398 K). This is a fixed-temperature simulation that represents a horizontal crossflow<br />
reactor of the type used to deposit epitaxial silicon layers. In this case, the upper<br />
wall temperature is held at a temperature (773 K), which is significantly lower than the<br />
deposition substrate, but higher than the inlet gas temperature (623 K).<br />
4.1.5.2 Project Setup<br />
The project file is called planar_shear_flow__tcs_cvd.ckprj. The data files used for<br />
this sample are located in the samples\planar_shear_flow\tcs_cvd directory. The<br />
reactor diagram contains one inlet, one planar shear-flow reactor, and an outlet.<br />
The properties of the inlet gas are described on the C1_Inlet panel. The inlet gas<br />
temperature and inlet gas velocity are input on the Stream Property Data tab. The<br />
Axial Velocity should be the maximum gas-phase velocity at the inlet. For this<br />
problem. which is in cartesian coordinates, the average velocity equals two-thirds of<br />
the maximum velocity of the parabolic velocity profile. The composition of the inlet gas<br />
is input on the Species-specific Property tab of the C1_Inlet panel.<br />
Parameters describing the reactor geometry and wall temperatures are entered on<br />
the Reactor Physical Property tab of the C1_ Planar Shear Flow panel. The<br />
temperatures for the upper wall and deposition surface (lower wall) are input on this<br />
tab, as well as an optional parameter specifying the distance over which the wall<br />
temperatures are smoothly transitioned from the inlet gas temperature to the desired<br />
wall temperature. The pressure, grid parameters, as well as the use of<br />
multicomponent diffusion and thermal diffusion (the Soret effect) are specified on this<br />
tab. The Species-specific Data tab allows the specification of initial guesses for the<br />
gas composition adjacent to the surface, which is not used in this example, as well as<br />
estimated values for the surface site fractions and bulk activities, which are provided.<br />
A good initial guess for these values is very helpful in attaining convergence.<br />
On the Basic tab of the Solver panel, the text output file has been specified to have<br />
solution data printed every 1 cm along the channel.<br />
RD0411-C20-000-001 131 © 2007 Reaction Design