10.10.2014 Views

Tutorials Manual

Tutorials Manual

Tutorials Manual

SHOW MORE
SHOW LESS

Create successful ePaper yourself

Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.

Chapter 4: Materials Problems<br />

<strong>Tutorials</strong> <strong>Manual</strong><br />

4.1.5 Trichlorosilane CVD in Planar Channel Flow Reactor<br />

4.1.5.1 Project Description<br />

This user tutorial presents a model for the CVD of silicon in a steady-state planar<br />

shear-layer flow reactor using the chemistry set described in Section 4.4.3. The<br />

process operates at atmospheric pressure, and a relatively high temperature<br />

(1398 K). This is a fixed-temperature simulation that represents a horizontal crossflow<br />

reactor of the type used to deposit epitaxial silicon layers. In this case, the upper<br />

wall temperature is held at a temperature (773 K), which is significantly lower than the<br />

deposition substrate, but higher than the inlet gas temperature (623 K).<br />

4.1.5.2 Project Setup<br />

The project file is called planar_shear_flow__tcs_cvd.ckprj. The data files used for<br />

this sample are located in the samples\planar_shear_flow\tcs_cvd directory. The<br />

reactor diagram contains one inlet, one planar shear-flow reactor, and an outlet.<br />

The properties of the inlet gas are described on the C1_Inlet panel. The inlet gas<br />

temperature and inlet gas velocity are input on the Stream Property Data tab. The<br />

Axial Velocity should be the maximum gas-phase velocity at the inlet. For this<br />

problem. which is in cartesian coordinates, the average velocity equals two-thirds of<br />

the maximum velocity of the parabolic velocity profile. The composition of the inlet gas<br />

is input on the Species-specific Property tab of the C1_Inlet panel.<br />

Parameters describing the reactor geometry and wall temperatures are entered on<br />

the Reactor Physical Property tab of the C1_ Planar Shear Flow panel. The<br />

temperatures for the upper wall and deposition surface (lower wall) are input on this<br />

tab, as well as an optional parameter specifying the distance over which the wall<br />

temperatures are smoothly transitioned from the inlet gas temperature to the desired<br />

wall temperature. The pressure, grid parameters, as well as the use of<br />

multicomponent diffusion and thermal diffusion (the Soret effect) are specified on this<br />

tab. The Species-specific Data tab allows the specification of initial guesses for the<br />

gas composition adjacent to the surface, which is not used in this example, as well as<br />

estimated values for the surface site fractions and bulk activities, which are provided.<br />

A good initial guess for these values is very helpful in attaining convergence.<br />

On the Basic tab of the Solver panel, the text output file has been specified to have<br />

solution data printed every 1 cm along the channel.<br />

RD0411-C20-000-001 131 © 2007 Reaction Design

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!